• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.3
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• pp.421-432
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• 2020

This paper proposes a 2-kW solid-state power amplifier (SSPA) developed by employing power amplifier pallets designed using gallium-nitride high electron mobility transistors, which is used in S-band military radars and to replace existing traveling-wave tube amplifier (TWTA). The SSPA consists of a high-power amplifier module, which combines eight power amplifier pallets, a drive amplifier module, a digital control module, and a power supply unit. First, the amplifier module and component were integrated into a small package to account for space limitations; next, an on-board harmonic filter was fabricated to reject spurious components; and finally, an auto gain control system was designed for various duty ratios because recent military radar systems are all active phase radars using the pulse operation mode. The developed SSPA exhibited a max gain of 48 dB and an output power ranging between 63-63.6 dBm at a frequency band of 3.1 to 3.5 GHz. The auto gain control function showed that the output power is regulated around 63 dBm despite the fluctuation of the input power from 15-20 dBm. Finally, reliability of the developed system was verified through a temperature environment test for nine hours at high (55 ℃) / low (-40℃) temperature profile in accordance with military standard 810. The developed SSPA show better performance such as light weight, high output, high gain, various safety function, low repair cost and short repair time than existing TWTA.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.12
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• pp.2674-2685
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• 1997

In this paper, the design and imprlementation of dual-band power amplifier which is used as a critical part for mobile phone to be simultaneously working at a dual band, 800MHz CDAM and PCS frequency band is described. DC operating point of power FET is limited to Class-B to enable long talk time considering that the tyupical power range of CDMA phones in working is around 10 to Class-B to enable long talk time considering that the typical power range of CDMA phones in working is around 10 to 15dBm, i.e., liner range. The power amplifier which employs two GaAs FETs with good linerity at a low operating point has duplexer cuplexer circuit to separate two frequency bands at input and output stage. Electromagnetic analysis for via holes and coupling between narrow transmission lines is included to design a circuit. Moduld size of 0.96CC($22{\times}14.5{\times}3mm^3$) and maximum module current of 130mA at output power range, 10 to 15dBm are attained. The power amplifer module has achieved ACPR performance with 2 to 3dB marging from IS-95 requirement at output powers, 23.5dBm for PCS and 28dBm for 800MHz CDMA respectively.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1275-1277
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• 1995

We designed and constructed an extremly high power s-band traveling wave resonator for the test of high power microwave components using 80MW pulsed klystron with $4{\mu}s$ pulse width. The 10dB directional coupler for the input power coupling was used, and the ring consists of phase shifter, tuner, H-band, and other microwave components. The designed total electrical length of the system is 10 times of the waveguide wavelength, ${\lambda}_g$=15.3cm, and the measured total insertion loss is 0.15dB. The low power test measurment showed the power multiplication of 14.69. The design goal is to achieve the peak power of 300MW, pulse width $4{\mu}s$ with 30 pulse repetition rate. In this article we discuss the treveling wave resonant ring constructed at the PAL laboratory together with the test results.

• Journal of Advanced Navigation Technology
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• v.10 no.2
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• pp.167-172
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• 2006

In this paper, the 25W power amplifier for UHF band radio transceiver has been designed and realized. The power amplifier was composed of drive, power amplifier and control stages. Feedback topology and coaxial line baluns were used for wide band operation. The VDMOS, which has reliable performance for linearity and efficiency, was used for power device and designed to operate as push-pull amplification at Class AB Bias. The power amplifier designed in such a way was found to show stable AM modulation performance when voice signal was detected at the gate stage, with being designed and realized to meet output specifications of commercial air traffic control transmitter.

• Proceedings of the KSRS Conference
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• v.1
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• pp.204-207
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• 2006

COMS will receive two different meteorological signals in S-Band from IDACS (Image Data Acquisition and Control System) in ground station before transmitting them in L-Band to user station. MODCS (Meteorological Ocean Data Communication Subsystem) in satellite released the value of required PFD (Power Flux Density) to receive two signals. Thus, DATS (Data Acquisition and Transmission Subsystem) needs to send two signals to satellite with a satisfied EIRP. The value of minimum HPA (High Power Amplifier) output power was estimated by subtracting antenna directional gain and path loss between antenna and HPA from the needed EIRP in this paper. Besides the minimum output power of HPA, the maximum output power was also calculated with considering IMD (Inter-Modulation Distortion) characteristics. IMD is always occurred in the output of HPA when LRIT and HRIT are amplified by using single HPA as COMS application. In this paper, the setting of maximum output power was determined when the IMD of modelled HPA was corresponded to the requirement of MODCS.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.12
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• pp.1331-1336
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• 2014

In this study, we have implemented a PAM(Power Amplifier Module) with 25W output power using by cooperate divider/Combiner circuit in X-band to minimize combine loss on a Al2O3 substrate. The PAM(Power Amplifier Module) is consisted of MMIC and 10way traveling wave divider/Combiner with proposed structure what have showed that 45.2dBm output power, 16dB gain, PAE 26 % and 17dBc@44dBm IMD3 characteristics. This combine/divider structure can be used when multistage passive divider and combiner needs. especially, power amplifier with very compact size.

• Journal of the Korea Institute of Military Science and Technology
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• v.12 no.4
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• pp.446-451
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• 2009

In this paper, we described the design and test results of a high output power amplifier MMIC developed by using 0.5um power pHEMT processes on a 6-inch GaAs wafer for the X-band T/R module application. In the MMIC design, we have used a simple on-chip gate active bias technology to compensate the threshold-voltage variation of pHEMT during the fabrication process and 16-to-1 power combining method to achieve the output power over 10watt. The fabricated chip has an output power over 12watts and maximum PAE of 32% over the frequency range of fo +/-750MHz.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.10 no.5
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• pp.71-78
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• 2011

In this paper, we describe the design and implementation of a high efficiency and broad-band Class-J mode power amplifier using gallium nitride(GaN) high-electron mobility transistor(HEMT). The matching circuit of proposed class-J mode power amplifier for 2nd harmonic impedance designed to provide pure reactance alone. The measurement results show that output power of $40{\pm}1$ dBm, power-added efficiency of 50%, and drain efficiency of 60% for a continuous wave signal at 1.4 to 2.6 GHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.205-209
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• 2001

In this paper, we designed power divider that using cellular and PCS band as 2-way device, because each port of designed power divider have reversion that is used to divide the power or compose the power in case of the 2 way, if input port of characteristic impedance with 50$\Omega$ is loading the power then size and phase of power appear on two output port being shared to two parts equally. Usually, divider have division effect of 3dB, but divider have insertion loss when designed in this paper, we have the purpose to design that have good isolation and design that equal insertion loss with minimum insertion loss in the broadband.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.2
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• pp.122-127
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• 2021

This paper produces CdS thin film using ITO glass as substrates. The MDS (Multiplex Deposition Sputter System) was used to produce devices by changing RF power and deposition time. The manufactured specimen was analyzed for its optical properties. The purpose of this paper is to find the fabrication conditions that can be applied to the photo-absorbing layer of solar cells. When RF power was 50W and deposition time was 10 minutes, the thickness was measured at 64Å. At 100W, the thickness was measured at 406Å and at 150 W, the thickness was measured at 889Å. Thin films were found to increase in thickness as RF power increased. As a result of the light transmittance measurement, 550-850nm was observed to have a transmittance of approximately 70% or more when the RF power was 50W, 100W, and 150W. Increasing RF power increased thickness and increased particle size, resulting in increased thin film density, resulting in reduced light transmittance. When RF power was 100W and deposition time was 15 minutes, the band gap was calculated at 3.998eV. When deposition time is 20 minutes, it is 3.987eV, 150W is 3.965eV at 15 minutes, and 3.831eV at 20 minutes. It was measured that the band gap decreased as the RF power increased. At XRD analysis, diffraction peaks at 2Θ=26.44 could be observed regardless of changes in RF power and deposition time. The FWHM was shown to decrease with increasing deposition time. And it was measured that the particle size increased as RF power was constant and deposition time was increased.