• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.17 no.10 s.113
• /
• pp.959-966
• /
• 2006

This paper proposes a new concept about dual band predistortion linear power amplifier(PD LPA) using diplexer for digital cellular ($f_o$=880 MHz) and IMT-2000($f_o$=2,140 MHz) base stations. The diplexer is composed of low pass filter having defected ground structure(BGS) microstrip line and high pass filter having high-Q lumped capacitors and distributed elements. The proposed predistorter adopts a reflection type intermodulation signal generator with 3 dB hybrid coupler for good reflection characteristic. for a forward link one carrier CDMA IS-95A 1FA and WCDMA 1FA signal, the proposed dual band PD LPA shows the adjacent channel leakage ratio(ACLR) improvement about 10 dB and 9.36 dB for digital cellular and IMT-2000 band, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.9
• /
• pp.559-564
• /
• 2016

This study examined the malfunction mode of the HCMOS IC under narrow-band high-power electromagnetic wave. Magnetron is used to a narrow-band electromagnetic source. MFR (malfunction failure rate) was measured to investigate the HCMOS IC. In addition, we measured the resistance between specific pins of ICs, which are exposed and not exposed to the electromagnetic wave, respectively. As a test result of measurement, malfunction mode is shown in three steps. Flicker mode causing a flicker in LED connected to output pin of IC is dominant in more than 7.96 kV/m electric field. Self-reset mode causing a voltage drop to the input and output of IC during electromagnetic wave radiation is dominant in more than 9.1 kV/m electric field. Power-reset mode making a IC remained malfunction after electromagnetic radiation is dominant in more than 20.89 kV/m. As a measurement result of pin-to-pin resistance of IC, the differences between IC exposed to electromagnetic wave and normal IC were minor. However, the five in two hundred IC show a relatively low resistance. This is considered to be the result of the breakdown of pn junction when latch-up in CMOS occurred. Based on the results, the susceptibility of HCMOS IC can be applied to a basic database to IC protection and impact analysis of narrow-band high-power electromagnetic waves.

• 한국ITS학회:학술대회논문집
• /
• 2010.05a
• /
• pp.87-91
• /
• 2010

• 한국신재생에너지학회:학술대회논문집
• /
• 2005.11a
• /
• pp.579-582
• /
• 2005

The sound measurement techniques in IEC 61400-11 are applied to field test and evaluation of noise emission from 1.5 MW wind turbine generator (WTG) at Yongdang-Lee and 650 kW WTG at Hangwon-Lee in Jeju Island. Apparent sound power level, wind speed dependence and third-octave band levels are evaluated for both of WTGs. 1.5 MW WTG at Yongdang is found to emit lower sound power than 660 kW one at Hangwon, which seems to be due to lower rotating speed of the rotor of WTG at Yongdang. Equivalent continuous sound pressure level s (ECSPL) of 650 kW WTG at Hangwon vary more widely with speed than those of 1.5 MW WTG at Yongdang. The reason for this is believed to be the fixed blade-rotating speed of WTG at Yongdang. One-third octave band analysis of the measured data show that the band components around 400-500 Hz are dominant for 1.5 MW WTG at Yongdang and those around 1K Hz are dominant for 660 kW WTG at Hangwon.

• Proceedings of the IEEK Conference
• /
• 2009.05a
• /
• pp.290-292
• /
• 2009

With advance in technologies for wireless sensor networks(WSNs), 2.4 GHz band has become gradually attractive due to increase in low-power wireless communication devices. Especially ZigBee(IEEE 802.15.4-based) technology whose frequency band includes the 2.4GHz industrial, scientific and medical band providing nearly worldwide availability has been universally applicable to a various remote monitoring system and applications related home network system. However network throughput of these systems is significantly deteriorated due to this ISM band is a license-exemption used in a variety of low-power wireless communication devices. For instance, other IEEE 802 wireless standards such as Bluetooth, WLAN, Wi-Fi and others cause radio interference to ZigBee. The experiments was carried out to analyze radio frequency interference between heterogeneous devices using ISM bands to improve the limited frequency utility factor. Finally this paper suggests a frequency hopping-based adaptive multi-channel methods to decrease interference with empirical results.

• 한국정보통신설비학회:학술대회논문집
• /
• 2008.08a
• /
• pp.441-446
• /
• 2008

In this papers, a PLDRO(Phase Locked Dielectric Resonator Oscillator) is designed and implemented at the oscillator in which fundamental frequency is 18.3 GHz. The proposed PLDRO so as to improve the PLDRO of the general structure is designed to the goal of the minimize of the size and the performance improvement. Three VCO(Voltage controlled Oscillator) and the power combiner improved the output power. A VCDRO(Voltage Controlled Dielectric Resonator Oscillator) is manufactured using a varactor diode to tune oscillating frequency electrically, and its phase is locked to reference frequency by SPD(Sampling Phase Detector). This product is fabricated on Teflon substrate with dielectric constant 2.2 and device is ATF -13786 of Ka-band using. This PLDRO generates an output power of 5.67 dBm at 18.3 GHz and has the characteristics of a phase noise of -80.10 dBc/Hz at 1 kHz offset frequency from carrier, the second harmonic suppression of -33 dBc. The proposed PLDRO can be used in Ka-band satellite applications

• KIEE International Transactions on Electrophysics and Applications
• /
• v.11C no.4
• /
• pp.99-106
• /
• 2001

An overview of Silicon Carbide (SiC) Static Induction Transistor (SIT) development is presented. Basic conduction mechanisms are introduced and discussed, including ohmic, exponential, and space charge limited conduction (SCLC) mechanisms. Additionally, the impact of velocity saturation and temperature effects on SCLC are reviewed. The small-signal model, breakdown voltage, power density, and different gate structures are also discussed, before a final review of published SiC SIT results. Published S-band (3-4 GHz) results include 9.5 dB of gain and output power of 120 W, and L-band (1.3 GHz) results include 400 W output power, 7.7 dB of gain, and power density of 16.7 W/cm.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2003.11a
• /
• pp.113-117
• /
• 2003

This paper describes the design and the simulation results of the RF CMOS Class-E Power Amplifier for a 2.4GHz ISM band. This circuit is composed two connected amplifiers. where Class F amplifier drives Class E amplifier. The proposed circuit can reduce the total power dissipation of the driving stage and can work with higher efficiency. The power amplifier has been implemented in a standard $0.25{\mu}m$ CMOS technology and is shown to deliver 100mW output power to load with 41% power added efficiency(PAE) from a 2.5V supply.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.16 no.4
• /
• pp.59-64
• /
• 2016

In this paper, a 10W GaN MMIC was designed and fabricated using the Ku-band SSPA module. For Design and fabrication of the SSPA module using Rogers(RO4003C) substrate was used for Branch-line structure. SSPA modules on budget Divider/Combiner was designed and fabricated less than the maximum insertion loss - 0.7dB. In addition, because it must be applied to the structural nature of GaN MMIC Gate Bias-Drain Bias circuit was implemented to apply the Gate-Drain sequential circuit, implemented the RF Power Detect, Temperature Detect, HPA On/Off function. Design and fabrication Ku-band SSPA Module got the measurement results that satisfy a maximum output of 15.6W, Gain 45.7dB, 19.0% efficiency.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.41 no.4
• /
• pp.45-50
• /
• 2004

In this paper, we present the low voltage and high efficiency Q-band MIMIC oscillator using device-level power combined structure. The oscillator was successfully integrated by using 0.1 ${\mu}{\textrm}{m}$ GaAs PHEMTS and the CPW transmission line. We show that the highest efficiency is 19 % with an output power of 2.6 ㏈m at a frequency of 34.56 ㎓. The operating voltage of the oscillator is 2.2 V which is lower voltage than that of previously reported oscillators at Q-band. And the maximum output power of 6.7 ㏈m was obtained at a frequency of 34.56 ㎓.