Design of RF CMOS Power Amplifier for 2.4GHz ISM Band

2.4GHz ISM 밴드용 고주파 CMOS 전력 증폭기 설계

  • Hwang, Young-Seung (Department of Semiconductor Science, Dongguk University) ;
  • Cho, Yeon-Su (Department of Semiconductor Science, Dongguk University) ;
  • Jung, Woong (Department of Semiconductor Science, Dongguk University)
  • 황영승 (동국대학교 반도체과학과) ;
  • 조연수 (동국대학교 반도체과학과) ;
  • 정웅 (동국대학교 반도체과학과)
  • Published : 2003.11.15

Abstract

This paper describes the design and the simulation results of the RF CMOS Class-E Power Amplifier for a 2.4GHz ISM band. This circuit is composed two connected amplifiers. where Class F amplifier drives Class E amplifier. The proposed circuit can reduce the total power dissipation of the driving stage and can work with higher efficiency. The power amplifier has been implemented in a standard $0.25{\mu}m$ CMOS technology and is shown to deliver 100mW output power to load with 41% power added efficiency(PAE) from a 2.5V supply.

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