• 대한기계학회논문집A
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• 제26권6호
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• pp.1187-1193
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• 2002

Anodic bonding process has been quantitatively evaluated based on the Taguchi analysis of the interfacial fracture toughness, measured at the interface of anodically bonded silicon-glass bimorphs. A new test specimen with a pre-inserted blade has been devised for interfacial fracture toughness measurement. A set of 81 different anodic bonding conditions has been generated based on the three different conditions for four different process parameters of bonding load, bonding temperature, anodic voltage and voltage supply time. Taguchi method has been used to reduce the number of experiments required for the bonding strength evaluation, thus obtaining nine independent cases out of the 81 possible combinations. The interfacial fracture toughness has been measured for the nine cases in the range of 0.03∼6.12 J/㎡. Among the four process parameters, the bonding temperature causes the most dominant influence to the bonding strength with the influence factor of 67.7%. The influence factors of other process parameters, such as anodic voltage and voltage supply time, bonding load, are evaluated as 18%, 12% and 2.3%, respectively. The maximum bonding strength of 7.23 J/㎡ has been achieved at the bonding temperature of 460$\^{C}$ with the bonding load of 45gf/㎠, the applied voltage of 600v and the voltage supply time of 25minites.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.338-341
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• 1996

Anodic bonding is a key technology for micromechanical components. The main advantages of this method can be formed in a batch process, over large areas, and is permanent and irreversible. In this paper, the bonding was performed at temperatures ranging from 300 to 450 $^{\circ}C$, voltages 400 to 1000 V, and times 10 to 30 minutes. The sizes of the Si and the Pyrex #7740 glass were 6 mm $\times$6 mm, respectively. Bonding processes and voids were observed by the optical microscope, and the composition of the anodic bonding interface was analyzed by the SIMS. Optimum condition of the anodic bonding was at temperature above 40$0^{\circ}C$ without regard to voltage.

• 센서학회지
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• 제29권5호
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• pp.354-359
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• 2020

The high vacuum hermetic sealing technique ensures excellent performance of MEMS resonators. For the high vacuum hermetic sealing, the customization of anodic bonding equipment was conducted for the glass/Si/glass triple-stack anodic bonding process. Figure 1 presents the schematic of the MEMS resonator with triple-stack high-vacuum anodic bonding. The anodic bonding process for vacuum sealing was performed with the chamber pressure lower than 5 × 10^-6 mbar, the piston pressure of 5 kN, and the applied voltage was 1 kV. The process temperature during anodic bonding was 400 ℃. To maintain the vacuum condition of the glass cavity, a getter material, such as a titanium thin film, was deposited. The getter materials was active at the 400 ℃ during the anodic bonding process. To read out the electrical signals from the Si resonator, a vertical feed-through was applied by using through glass via (TGV) which is formed by sandblasting technique of cap glass wafer. The aluminum electrodes was conformally deposited on the via-hole structure of cap glass. The TGV process provides reliable electrical interconnection between Si resonator and aluminum electrodes on the cap glass without leakage or electrical disconnection through the TGV. The fabricated MEMS resonator with proposed vacuum packaging using three-layer anodic bonding process has resonance frequency and quality factor of about 16 kHz and more than 40,000, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.374-375
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• 2006

This paper describes anodic bonding characteristics of MCA to Si-wafer using evaporated Pyrex #7740 glass thin-films for MEMS applications. Pyrex #7740 glass thin-films with the same properties were deposited on MCA under optimum RF sputter conditions (Ar 100 %, input power $1\;W/cm^2$). After annealing at $450^{\circ}C$ for 1 hr, the anodic bonding of MCA to Si-wafer was successfully performed at 600 V, $400^{\circ}C$ in $110^{-6}$ Torr vacuum condition. Then, the MCA/Si bonded interface and fabricated Si diaphragm deflection characteristics were analyzed through the actuation and simulation test. It is possible to control with accurate deflection of Si diaphragm according to its geometries and its maximum non-linearity being 0.05-0.08 %FS. Moreover, any damages or separation of MCNSi bonded interfaces did not occur during actuation test. Therefore, it is expected that anodic bonding technology of MCNSi-wafers could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권1호
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• pp.70-72
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• 2000

In this paper, a spacer process for FED(Field Emission Display) was developed with the glass to glass anodic bonding technology using Al film as an interlayer and a 3.5 inch monochromatic type FED was fabricated. Holder to dislocate spacers vertically was designed with (110) Si wafer by bulk etching. Spacers, $100\mum\; width\; and\; 1000\mum$ height, were formed on anode panel by spacer to glass anodic bonding and the fabricated FED was operated for emission at 1㎸ anode voltage.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1946-1949
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• 1996

We have performed silicon-to-silicon anodic bonding using glass layer deposited by electron beam evaporation. Wafers can be bonded at $135^{\circ}C$ with an applied voltage of $35V_{DC}$, which enables application of this technique to the vacuum packaging of microelectronic devices, because its bonding temperature and voltage are low. From the experimental results, we have found that the evaporated glass layer more than $1\;{\mu}$ m thick was suitable for anodic bonding. The role of sodium ions for anodic bonding was also investigated by theoretical bonding mechanism and experimental inspection.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.160-163
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• 2003

This paper describes on anodic bonding characteristics of MLCA(Multi Layer Ceramic Actuator) to Si-wafer using evaporated Pyrex #7740 glass thin-films for MEMS applications. Pyrex #7740 glass thin-films with same properties were deposited on MLCA under optimum RF magneto conditions(Ar 100 %, input power $1\;/cm^2$). After annealing in $450^{\circ}C$ for 1 hr, the anodic bonding of MLCA to Si-wafer was successfully performed at 600 V, $400^{\circ}C$ in - 760 mmHg. Then, the MLCA/Si bonded interface and fabricated Si diaphragm deflection characteristics were analyzed through the actuation test. It is possible to control with accurate deflection of Si diaphragm according to its geometries and its maximum non-linearity is 0.05-008 %FS. Moreover, any damages or separation of MICA/Si bonded interfaces do not occur during actuation test. Therefore, it is expected that anodic bonding technology of MICA/Si wafers could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.

• 한국진공학회지
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• 제8권4A호
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• pp.465-469
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• 1999

In this paper, spacer process for FED (Field Emission Display ) was developed with the glass to glass anodic bonding technology using Al film as an interlayer. Characteristics, current density-time curves and force of the anodic boding were measured on various thickness of Al film; 1000$\AA$, 2000$\AA$, 3000$\AA$, 4000$\AA$ and 500$\AA$. Holders for spacer were fabricated with photosensitive glass and (110) Si wafer by bulk micromachining. Spacers was formed on glass substrate by spacer glass to glass anodic bonding and an evacuated panel was fabricated to prove the potential of application for FED.

• 센서학회지
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• 제12권6호
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• pp.265-272
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• 2003

본 논문은 파이렉스 #7740 유리 박막을 이용한 MEMS용 MLCA (Multi Layer Ceramic Actuator)와 Si기판의 양극접합 특성에 관한 것이다. 최적의 RF 마그네트론 스피터링 조건 (Ar 100%, input power $1\;W/cm^2$)하에서 MLCA기판위에 파이렉스 #7740 유리의 특성을 갖는 박막을 증착하였다. $450^{\circ}C$에서 1시간 열처리한 다음, -760 mmHg, 600V 그리고 $400^{\circ}C$에서 1시간동안 양극접합했다. 그 다음에 Si 다이어프램을 제조한 후, MLCA/Si 접합계면과 MLCA 구동을 통한 Si 다이어프램 변위특성을 분석 및 평가하였다. 다이어프램 형상에 따라 정밀한 변위 세어가 가능했으며 0.05-0.08 %FS의 우수한 선형성을 나타내었다. 또한, 측정동안 접합계면 균열이나 계면분리가 일어나지 않았다. 따라서, MLCA/Si기판 양각접합기술은 고성능 압전 MEMS 소자 제작공정에 유용하게 사용가능할 것이다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2004년도 추계 기술심포지움 초록집
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• pp.11-11
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• 2004