• Proceedings of the Korean Operations and Management Science Society Conference
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• 2004.05a
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• pp.409-412
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• 2004

Today, meta-heuristic algorithms have been much attention by researcher because they have the power of solving combinational optimization problems efficiently. As the result, many variants of a meta-heuristic algorithm (e.g., simulated annealing) have been proposed for specific application domains. However, there are few efforts to classify them into a unified software framework, which is believed to provide the users with the reusability of the software, thereby significantly reducing the development time of algorithms. In this paper, we present an object-oriented framework to be used as a general tool for efficiently developing variants of simulated annealing algorithm. The interface classes in the framework achieve the modulization of the algorithm, and the users are allowed to specialize some of the classes appropriate for solving their problems. The core of the framework is Algorithm Configuration Pattern (ACP) which facilitates creating user-specific variants flexibly. Finally, we summarize our experiences and discuss future research topics.

• Proceedings of the Korean Operations and Management Science Society Conference
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• 2005.05a
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• pp.1020-1025
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• 2005

The set covering(SC) problem has many practical application of modeling not only real world problems in civilian but also in military. In this paper we study optimal allocation model for maximizing utility of consolidating old fashioned and new air defense weapon system like Patriot missile and develop the new computational algorithm for the SC problem by using simulated annealing(SA) algorithm. This study examines three different methods: 1) simulated annealing(SA); 2) accelerated simulated annealing(ASA); and 3) selection by effectiveness degree(SED) with SA. The SED is adopted as an enhanced SA algorithm that the neighboring solutions could be generated only in possible optimal feasible region at the PERTURB function. Furthermore, we perform various experiments for both a reduced and an extended scale sized situations depending on the number of customers(protective objective), service(air defense), facilities(air defense artillery), threat, candidate locations, and azimuth angles of Patriot missile. Our experiment shows that the SED obtains the best results than others.

• Journal of Korea Society of Industrial Information Systems
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• v.10 no.4
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• pp.16-25
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• 2005

In this paper, we proposed a novel algorithm combined simulated annealing and genetic algorithms for designing optimal binary phase computer generated hologram. In the process of genetic algorithm searching by block units, after the crossover and mutation operations, simulated annealing algorithm searching by pixel units is inserted. So, the performance of BPCGH was improved. Computer simulations show that the proposed combined iterative algorithm has better performance than the simulated annealing algorithm in terms of diffraction efficiency

• IE interfaces
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• v.18 no.4
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• pp.370-381
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• 2005

This study is concerned with seeking the optimal allocation(disposition) for maximizing utility of consolidating old fashioned and new air defense weapon system like SAM-X(Patriot missile) and developing efficient solution algorithm based on simulated annealing(SA) algorithm. The SED(selection by effectiveness degree) procedure is implemented with an enhanced SA algorithm in which neighboring solutions could be generated only within the optimal feasible region by using a specially designed PERTURB function. Computational results conducted on the problem sets with a variety of size and parameters shows the significant efficiency of our SED algorithm over existing methods in terms of both the computation time and the solution quality.

• Journal of the Korean Operations Research and Management Science Society
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• v.29 no.3
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• pp.145-155
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• 2004

The design of a communication network has long been a challenging optimization problem. Since the optimal design of a network topology is a well known as a NP-complete problem, many researches have been conducted to obtain near optimal solutions in polynomial time instead of exact optimal solutions. All of these researches suggested diverse heuristic algorithms that can be applied to network design problems. Among these algorithms, a simulated annealing algorithm has been proved to guarantee a good solution for many NP-complete problems. in applying the simulated annealing algorithms to network design problems, generating mechanisms for initial solutions and candidate solutions play an important role in terms of goodness of a solution and efficiency. This study aims at analyzing these mechanisms through experiments, and then suggesting reliable mechanisms.

• Journal of Power System Engineering
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• v.8 no.2
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• pp.45-52
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• 2004

This paper describes the optimum design for journal bearings by using simulated annealing method. Simulated annealing algorithm is an optimization technique to calculate global and local optimum solutions. Dynamic characteristics of the journal bearing are calculated by using finite difference method (FDM), and these values are used for the procedure of journal bearing optimization. The objective is to minimize the resonance response (Q factor) of the simple rotor system supported by the journal bearings. Bearing clearance and length to diameter ratio are used as the design variables.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.180-184
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• 2017

In this study, we examine the electrical properties of diketopyrrolopyrrole (DPP) containing polymer semiconductors that have been reported to show high performance with ambipolar characteristics. We prepared three different DPP based polymer semiconductors (PDPPTPT, PDPP3T, and PDPP2T-TT) and fabricated organic thin film transistors (OTFTs) with ambipolar polymer semiconductors as an active layer. All three DPP polymers showed only p-type properties at initial measurements. However, after annealing in vacuum oven for 24 hours, it was found that the DPP based polymers have both p-type and n-type properties. It is speculated that the residual impurities supposedly regarded as a strong electron trap source were eliminated during the vacuum process.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.538-540
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• 2009

The SBN thin films were deposited at substrate temperature of 300[$^{\circ}C$] on Pt-coated electrode (Pt/Ti/$SiO_2$/Si(100)) using RF sputtering method. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above 750[$^{\circ}C$]. The voltage dependence of dielectric loss showed a value within 0.01 in voltage ranges of -5~+5[V]. The capacitance characteristics showed a stable value of about 0.7[${\mu}F/cm^2$].

• Journal of the Korean Society for Heat Treatment
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• v.17 no.2
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• pp.78-86
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• 2004

Effects of the annealing parameters on the formation of ferrites transformed at low temperatures were studied in cold-rolled ultra low carbon steels with niobium and/or chromium. Niobium and chromium were found to be effective in the formation of the low temperature transformation ferrites. The low temperature transformation ferrites more easily formed when both higher annealing temperature and longer annealing time, allowing substitutional alloying elements to distribute between phases, are in combination with faster cooling rate. It was found from EBSD study that the additions of niobium or chromium resulted in the increase in the numbers of high angle grain boundaries and the decrease in those of the low angle grain boundaries in the microstructures. Both granular bainitic ferrite and bainitic ferrite were characterized by the not clearly etched grain boundaries in light microscopy because of the low angle grain boundaries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.709-712
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• 2001

The effects of post annealing temperature by the Rapid Thermal Annealing(RTA) on the electrical properties of Pb(Zr,Ti)O$_3$(PZT) thin film were investigated. Analyses by the RTA treatments reveled that the leakage current of PZT thin films strongly depend on heating temperature and time. It was found that leakage current properties of PZT capacitor were changed by heating temperature during the RTA annealing. On Pt/Ti/Si substrates, PZT films are deposited at 350 $^{\circ}C$ by rf magnetron sputtering. The X-ray diffusion (XRD) was confirmed the formation of PZT thin film. Leakage current characteristics were improved with decreasing the post annealing temperature of PZT thin film. RTA annealed film on the 700$^{\circ}C$ shows ferroelectric and electrical properties with a remanent polarization of 12.4${\mu}$C/$\textrm{cm}^2$ coercive field of 117kV/cm, leakage current J= 6.2${\times}$10$\^$-6/ A/$\textrm{cm}^2$