• Journal of Magnetics
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• v.15 no.4
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• pp.179-184
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• 2010

We have investigated the effects of post annealing on iron oxide nanoparticles synthesized by the novel hydrothermal synthesis method with the $FeSO_4{\cdot}7H_2O$. To investigate the post annealing effect, the as-synthesized iron oxide nanoparticles were annealed at different temperatures in a vacuum chamber. The morphological, structural and magnetic properties of the iron oxide nanoparticles were investigated with high resolution X-ray powder diffraction (XRD), high resolution transmission electron microscopy (HRTEM), Mossbauer spectroscopy, and vibrating sample magnetometer analysis. According to the XRD and HRTEM analysis results, as-synthesized iron oxide nanoparticles were only magnetite ($Fe_3O_4$) phase with face-centered cubic structure but post annealed iron oxide nanoparticles at $700^{\circ}C$ were mainly magnetite phase with trivial maghemite ($\gamma-Fe_2O_3$) phase which was induced in the post annealing treatment. The crystallinity of the iron oxide nanoparticles is enhanced by the post annealing treatment. The particle size of the as-synthesized iron oxide nanoparticles was about 5 nm and the particle shape was almost spherical. But the particle size of the post annealed iron oxide nanoparticles at $700^{\circ}C$ was around 25 nm and the particle shape was spherical and irregular. The as-synthesized iron oxide nanoparticles showed superparamagnetic behavior, but post annealed iron oxide nanoparticles at $700^{\circ}C$ did not show superparamagnetic behavior due to the increase of particle size by post annealing treatment. The saturation of magnetization of the as-synthesized nanoparticles, post annealed nanoparticles at $500^{\circ}C$, and post annealed nanoparticles at $700^{\circ}C$ was found to be 3.7 emu/g, 6.1 emu/g, and 7.5 emu/g, respectively. The much smaller saturation magnetization value than one of bulk magnetite can be attributed to spin disorder and/or spin canting, spin pinning at the nanoparticle surface.

• Korean Journal of Materials Research
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• v.30 no.11
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• pp.615-620
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• 2020

Oxide semiconductor, represented by a-IGZO, has been commercialized in the market as active layer of TFTs of display backplanes due to its various advantages over a-Si. a-IGZO can be deposited at room temperature by RF magnetron sputtering process; however, additional thermal annealing above 300℃ is required to obtain good semiconducting properties and stability. These temperature are too high for common flexible substrates like PET, PEN, and PI. In this work, effects of microwave annealing time on IGZO thin film and associated thin-film transistors are demonstrated. As the microwave annealing time increases, the electrical properties of a-IGZO TFT improve to a degree similar to that during thermal annealing. Optimal microwave annealed IGZO TFT exhibits mobility, SS, V_th, and V_H of 6.45 ㎠/Vs, 0.17 V/dec, 1.53 V, and 0.47 V, respectively. PBS and NBS stability tests confirm that microwave annealing can effectively improve the interface between the dielectric and the active layer.

• Journal of Magnetics
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• v.7 no.2
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• pp.45-50
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• 2002

A magnetic field annealing is firstly used for nanostructured Sm-Co/Co films, prepared by magnetron sputtering method. The effects of magnetic field annealing on single-layered Sm-Co films are different from those on multi-layered Sm-Co/Co films. A detailed analysis of microstructures and magnetic properties is made by means of HRTEM, Auger electron spectroscopy, XRD and Physical Property Measurement System (PPMS). From magnetic properties and microstructure analysis, it was confirmed that these differences originate from the effects of magnetic field annealing on crystallization behavior of the films. The relationship between magnetic properties and microstructures explains a different demagnetization process of single-layered and multilayered films. For the single-layered Sm-Co films, magnetic-field-annealing makes the main phases change from $CaCu_5/ to Zn_2Th_{17}$ structure, resulting in a decrease of coercivity. The results show that the magnetic-field-annealing is useful to improve the properties of nanostructured Sm-Co(30 nm)/Co(10 nm) films, which ascribe to improving the pinning effectiveness in coercivity mechanism and decreasing the magnetostatic interaction of films. A very high coercivity about 0.7 T was obtained from nanoscaled multi-layered Sm-Co(30 nm)-/Co(10 nm) films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.103-107
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• 2000

Boron Phosphide films were deposited on the glass substrate at the low temperature, 55$0^{\circ}C$, by the reaction of B$_2$H$_{6}$ with PH$_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 50 $m\ell$/min for B$_2$H$_{6}$, 50 $m\ell$/min for PH$_3$ $m\ell$/min and 1.5 $\ell$/min for $N_2$. To investigate the annealing effect, the films were annealed for 1hour, 3hours in $N_2$ambient at 55$0^{\circ}C$ and tested. The deposition rate was 1000$\AA$/min and the refractive index of film was 2.6. The measurement of X-RD shows that the films have the preferred orientation of (1 0 1) and the intensity of the peak for (1 0 1) orientation decreases according to the annealing time. The data of VIS spectrophotometer proved that the films are transparent in the visible range and the maximal transmittance increases according to the annealing time; 75.49% for as-deposited, 76.71% for 1hr-annealed and 86.4 % for 3hrs-annealed. The measurement of AFM shows that the average surface roughness increases according to the annealing time; 73$\AA$ for as-deposited, 88.9$\AA$ for 1hr-annealed and 220$\AA$ for 3hrs-annealed. Also, The data of the secondary electron emission rate(Υ) shows that the secondary electron emission rate increases according to the annealing time; 0.317 for 1hr-deposited, 0.357 for 1hr-annealed and 0.537 for 3hrs-annealed. And, The measurement of FT-IR that the characteristic of transmittance in the infrared range was stabilized through annealing.ing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.198-202
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• 2018

In this work, we have investigated the effect of a 30-min thermal anneal at $550^{\circ}C$ on the electrical characteristics of neutron-irradiated 4H-SiC MOSFETs. Thermal annealing can recover the on/off characteristics of neutron-irradiated 4H-SiC MOSFETs. After thermal annealing, the interface-trap density decreased and the effective mobility increased in terms of the on-characteristics. This finding could be due to the improvement of the interfacial state from thermal annealing and the reduction in Coulomb scattering due to the reduction in interface traps. Additionally, in terms of the off-characteristics, the thermal annealing resulted in the recovery of the breakdown voltage and leakage current. After the thermal annealing, the number of positive trapped charges at the MOSFET interface was decreased.

• Membrane Journal
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• v.15 no.1
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• pp.15-21
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• 2005

The integrally skinned asymmetric PAN ultrafiltration membranes were annealed for reducing the pore size. The effect of the chemical structure of two PAN polymers (homo- and copolymer) on annealing was investigated. The annealing of PAN polymer was strongly affected by the chemical structure of the polymer. In other words, the annealing effect of the copolymer was much larger than that of the homopolymer due to its less rigid structure of the main chain. Before annealing, the membranes were usually preheated in water in terms of the complete removal of remained solvents in the membranes. The annealing effect was bigger when no preheating. However, the preheating of the membrane before annealing at high temperatures leads to an increase in the pore size of membranes. The surface of the membranes was slightly negative and the salt rejection of PAN nanofiltration membrane was in the following order: R(Na₂SO₄) > R(NaCl) > R(MgSO₄) > R(CaCl₂). This salt rejection behavior could be explained by the Donnan equilibrium and the electroneutrality.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.817-820
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• 2004

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using a RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing time were studied. In the SEM images, Bi-layered perovskite phase was crystallized at 10min and grains largely grew with annealing tune. SBT thin films are transformed from initial amorphous phase to the fully formed layer-structured perovskite. During the annealing process at $750^{\circ}C$, we found that an fluorite-like stage is formed after 3min. In the XRD pattern, the SBT thin films after 3min annealing time had (105) orientation. The ferroelectric properties of SBT capacitor with annealing time represent a favorable properties at 60 min. The maximum remanent polarization and the coercive electric field with 60 min are $12.40C/cm^2$ and 30kV/cm, respectively. The leakage current density with 60min is $6.81{\times}10^{-10}A/cm^2$.

• Korean Journal of Metals and Materials
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• v.50 no.10
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• pp.775-783
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• 2012

The effect of thermal annealing on the in-situ growth characteristics of intermetallics (IMCs) and the mechanical strength of Cu pillar/Sn-3.5Ag microbumps are systematically investigated. The $Cu_6Sn_5$ phase formed at the Cu/solder interface right after bonding and grew with increased annealing time, while the $Cu_3Sn$ phase formed at the $Cu/Cu_6Sn_5$ interface and grew with increased annealing time. IMC growth followed a linear relationship with the square root of the annealing time due to a diffusion-controlled mechanism. The shear strength measured by the die shear test monotonically increased with annealing time. It then changed the slope with further annealing, which correlated with the change in fracture modes from ductile to brittle at a critical transition time. This is ascribed not only to the increasing thickness of brittle IMCs but also to the decreasing thickness of the solder, as there exists a critical annealing time for a fracture mode transition in our thin solder-capped Cu pillar microbump structures.

• Journal of the Korean Society for Heat Treatment
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• v.32 no.6
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• pp.263-269
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• 2019

The mechanism of microstructure and hardness changes during mill annealing of Ti-6Al-4V alloy was investigated. The annealing heat treatments were performed at $675{\sim}795^{\circ}C$ in vacuum for 2 hours, followed by air cooling. The microstructure was observed by using an optical microscope and X-ray diffraction, and hardness was measured by using a Rockwell hardness tester and micro Vickers hardness tester. The average grain size becomes smaller at $675^{\circ}C$ to $735^{\circ}C$ due to the formation of new grains rather than grain growth, but becomes larger at $735^{\circ}C$ to $795^{\circ}C$ due to growth of the already-formed grains rather than formation of new grains. The mill annealing temperature becomes higher, the ${\beta}$ phase fraction decreases and ${\alpha}$ phase fraction increases at room temperature. This is because the higher annealing temperature, the smaller amount of V present in the ${\beta}$ phase, and thus the ${\beta}$ to ${\alpha}$ transformation occurs more easily when cooled to room temperature. As the mill annealing temperature increases, the hardness value tends to decrease, mainly due to resolution of defects such as dislocations from $675^{\circ}C$ to $735^{\circ}C$ and due to grain growth from $735^{\circ}C$ to $795^{\circ}C$, respectively.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.17 no.6
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• pp.53-60
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• 2018

In this paper, the effect of different 3D printing parameters including laminated angle and annealing temperature is observed their effect on FDM conductive 3D printing. In FDM 3D printing, a conductive filament is heated quickly, extruded, and then cooled rapidly. FDM 3D Print conductive filament is a poor heat conductor, it heats and cools unevenly causing the rapid heating and cooling to create internal stress. when the printed conductive specimens this internal stress can be increase electrical resistance and decrease electrical conductivity. Therefore, This experiment would like to use annealing to remove internal stress and increase electrical conductivity. The result of experiment when 3D printing conductive specimen be oven cooling of annealing temperature $120^{\circ}C$ electrical resistance appeared decrease than before annealing. So We have found that 3D printing annealing removes internal stresses and increases the electrical conductivity of printed specimens. These results are very useful for making conductive 3D printing electronic circuit, sensor ect...with electrical conductance suitable for the application.