• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.36-37
• /
• 2006

Titanium oxy-nitride ($TiN_O_y$) thin films were deposited on $SiO_2$/Si substrates using reactive dc magnetron sputtering, and were then annealed at various temperatures in air ambient to incorporate oxygen into the films. The effect of annealing temperature on the structural and electrical properties of the films was investigated. The grain size of the films decreases with increasing annealing temperature. On the other hand, crystallinity of the films is independent of annealing temperature in air ambient. Resistivity of the films increases remarkably as an annealing temperature increases and temperature coefficience of resistance (TCR) of the films varies from a positive value to a negative value. The films annealed at $350^{\circ}C$ for 30 min exhibited a near-zero TCR value of approximately -5 ppm/K. The decrease of the grain size with increasing annealing temperature was attributed to an increase of oxygen concentration incorporated into the films during anncaling treatment.

• Journal of the Korean Vacuum Society
• /
• v.8 no.3A
• /
• pp.238-244
• /
• 1999

Pt/SBT/Pt capacitors were fabricated using the MOD-derived $SrBi_{2x}Ta_2O_9$ (SBT) films and their ferroelectic and leakage current characteristics were investigated with post annealing at 400~$800^{\circ}C$. Although the MOD-derived SBT film exhibited the hysteresis loop typical for the leaky film, the well-saturated ferroelectric hysteresis loop could be obtained by post annealing the Pt/SBT/Pt capacitors at $550^{\circ}C$~$800^{\circ}C$. The remanent polarization $2P_r$ of the SBT film exhibited a maximum value of 9.72$\mu\textrm{cm}^2$ with post annealing at $600^{\circ}C$, and then decreased with increasing the post annealing temperature above $600^{\circ}C$. The MOD-derived SBT films exhibited the high leakage current density of ~$10^{-3} \textrm{A/cm}^2$ at 75kV/cm. With post annealing the Pt/SBT/Pt capacitor at 600~$800^{\circ}C$, however, the leakage current density decreased remarkably to less than $10^{-6}\textrm{A/cm}^2$ at 75kV/cm.

• Korean Journal of Materials Research
• /
• v.19 no.6
• /
• pp.313-318
• /
• 2009

Polymer Light Emitting Diodes (PLEDs) with an ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structure were prepared on plasma-treated ITO/glass substrates using spin-coating and thermal evaporation methods. The annealing effects of the PFO-poss film when it acts as the emission layer were investigated by using electrical and optical property measurements. The annealing conditions of the PFO-poss emission film were 100 and $200^{\circ}C$ for 1, 2 and 3 hours, respectively. The luminance increased and the turn-on voltage decreased when the annealing temperature and treatment time increased. After examining the Luminance-Voltage (L-V) properties of the PLED, the maximum luminance was found to be 1497 cd/$m^2$ at 11 V for the device when it was annealed at $200^{\circ}C$ for 3 hours. The peak intensity of the PLED emission spectra at approximately 525 nm in wavelength increased when the annealing temperature and time of the PFO-poss film increased. These results suggest that the light emission color shifted from blue to green.

• Journal of the Korean Society for Heat Treatment
• /
• v.31 no.2
• /
• pp.56-62
• /
• 2018

Many researchers have studied on the precipitation control after solution treatment to improve the damping capacity without decreasing the strength. However, studies on the damping capacity and microstructure changes after deformation in the solid solution strengthening alloys were inadequate, such as the Al-Zn series magnesium alloys. Therefore, in order to investigate the effect of annealing condition on microstructure change and damping a capacity of AZ61 magnesium alloy. In this study, it was confirmed that the microstructure changes affect the damping capacity and hardness when annealed AZ61 alloy. AZ61 magnesium alloy was rolled at $400^{\circ}C$ with rolling reduction of 30%. These specimens were annealed at $350^{\circ}C$ to $450^{\circ}C$ for 30-180 minutes. After annealing, microstructure was observed by using optical microscopy, and damping capacity was measured by using internal friction measurement machine. Hardness was measured by Vickers hardness tester under a condition of 0.3 N. In this study, static recrystallization was observed regardless of the annealing conditions. In addition, uniform equiaxed grain structure was developed by annealing treatment. Hardness is decreased with increasing grain size. This is associated with Hall-Petch equation and static recrystallization. In case of damping capacity, bigger grain size show the larger damping capacity.

• Korean Journal of Metals and Materials
• /
• v.48 no.9
• /
• pp.856-860
• /
• 2010

Silver nanoparticles were formed on silica substrates through thin film dewetting at high temperature. The microstructural and morphological evolution of the particles were characterized as a function of processing variables such as initial film thickness, annealing time, and temperature. Silver thin films were deposited onto the silica using a pulsed laser deposition system and annealed in reducing atmosphere to induce agglomeration of the films. The film thicknesses before dewetting were in the range of 5 to 25 nm. A noticeable agglomeration occurs with annealing at temperatures higher than $300^{\circ}C$, and higher annealing temperature increases particle size uniformity for the same film thickness sample. Average particle size linearly correlates to the film thickness, but it does not strongly depend on annealing temperature and time, although threshold temperature for complete dewetting increases with an increase of film thickness. Lower annealing temperature develops faceted surface morphology of the silver particles by enhancing the growth of the low index crystal plane of the particles.

• Transactions of Materials Processing
• /
• v.28 no.5
• /
• pp.247-256
• /
• 2019

In this study, the development of annealing textures in cold rolled and annealed tantalum sheets was analyzed using electron backscatter diffraction. At $900^{\circ}C$, the textures of the recrystallized grains in the partially and completely recrystallized microstructures displayed significant similarities. The average diameter of the recrystallized grains with ${\gamma}-fiber$ orientations exceeded that of grains with different orientations, and the average growth rates were unrelated to the orientations after an initial stage of recrystallization. Additional cold rolling and annealing was done for controlled initial microstructures and textures inherited from various processes of prior cold rolling and annealing. This second cycle of the process resulted in stronger textures with major ${\gamma}-fiber$ orientations as a result of the enhanced ${\gamma}-fiber$ orientations in the preceding textures. A coarse-grained prior microstructure resulted in a weaker annealing texture than a fine grained one regardless of the stronger previous texture, which was occasioned by the sub-structures of the minor orientations at local deformation inhomogeneities such as sharp in-grain shear bands.

• Journal of the Korean institute of surface engineering
• /
• v.54 no.3
• /
• pp.124-132
• /
• 2021

Graphene which grown on the cobalt or nickel sputtered copper foil depending on the annealing time was studied. Graphene on the copper foil grown by chemical vapor deposition was compared to those on cobalt or nickel sputtered copper foil by using a RF (Radio Frequency) magnetron sputtering at room temperature. FLG(few-layer graphene) was identified independent of substrates by Raman and X-Ray Photoelectron Spectroscopy analyses. On copper foil, size and area fraction of the graphene growth increased until 30 minutes annealing and then didn't changed. Comparing to that, graphene on the cobalt refined till 50 minutes annealing, after then the effect disappeared which means a similar shape to that on copper foil. On nickel the graphene refined irrespective of annealing time that is possibly because of the complete solid solution of nickel with copper.

• Journal of Ceramic Processing Research
• /
• v.20 no.4
• /
• pp.431-435
• /
• 2019

The thermal annealing effects on the optical transparency and luminescent characteristics of the Eu-doped Y2O3 thin films have been investigated. The as-deposited Y2O3:Eu films exhibited an optical band gap of 5.78 eV with a transparency of 89 % at a wavelength of 550 nm. As the annealing temperature increased from 1000 to 1300 ℃, the optical band gap and transparency of the films decreased from 5.77 to 4.91 eV and from 86.8 to 64.5 % at 550 nm, respectively. The crystalline quality of the films was improved with increasing annealing temperature. The annealed Y2O3:Eu films emitted a red-color photoluminescence (PL) with the highest emission peak near 612 nm. The PL intensity was increased with increasing annealing temperature to 1200 ℃, resulting from the improvement in the crystalline quality of the films. The PL intensity was decreased with further increasing temperature above 1200 ℃ due to the formation of Y2SiO5 phase by the reaction of the film with the quartz substrate.

• Journal of the Korean Society for Heat Treatment
• /
• v.35 no.4
• /
• pp.211-219
• /
• 2022

It is known that superplastic materials with ultrafine grains have high elongation mainly due to grain boundary sliding. Therefore, in the present study we examined the influence of grain refinement, caused by a repetitive cold rolling and annealing process, on both superplastic elongation and superplastic deformation mechanism. The cold rolling and annealing process was repetitively applied up to 4 times using Fe-10Mn-3.5Si alloy. High-temperature tensile tests were conducted at 763 K with an initial strain rate of 1 × 10^-3 s^-1 using the specimens. The superplastic elongation increased with the number of the repetitive cold rolling and annealing process; in particular, the 4 cycled specimen exhibited the highest elongation of 372%. The primary deformation mechanism of all specimens was grain boundary sliding between recrystallized α-ferrite and reverted γ-austenite grains. The main reason for the increase in elongation with the number of the repetitive cold rolling and annealing process was the increase in fractions of fine recrystallized α-ferrite and reverted γ-austenite grains, which undergo grain boundary sliding.

• Journal of the Semiconductor & Display Technology
• /
• v.21 no.3
• /
• pp.105-109
• /
• 2022

For the realization of higher reliable transition metal dichalcogenide layer, molybdenum disulfide was formed on sapphire substrate by direct current sputtering and subsequent rapid thermal annealing process. Unlike RF sputtered MoS₂ thin films, DC sputtered showed no irregular holes and protrusions after annealing process from scanning electron microscope images. From atomic force microscope results, it was possible to investigate that surface roughness of MoS₂ thin films were more dependent on DC sputtering power then annealing temperature. On the other hand, the Raman scattering spectra showed the dependency of significant E¹_2g and A¹_g peaks on annealing temperatures.