• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3312-3316
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• 2013

Single crystals of hexagonal graphenes were successfully grown on Cu foils using the atmospheric pressure chemical vapor deposition (CVD) method. We investigated the effects of reaction parameters, such as the growth temperature and annealing time, on the size, coverage, and density of graphene domains grown over Cu foil. The mean size of the graphene domains increased significantly with increases in both the growth temperature and annealing time, and similar phenomena were observed in graphene domains grown by low pressure CVD over Cu foil. From the comparison of micro Raman spectroscopy in the graphene films grown with different annealing times, we found that the nucleation and growth of the domains were strongly dependent on the annealing time and growth temperature. Therefore, we confirmed that when reaction time was same, the number of layers and the degree of defects in the synthesized graphene films both decreased as the annealing time increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.796-803
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• 1998

Intrinsic and proximity gettering are popular processes to get higher cumulative production yield and usually adopt multi-step annealing and high energy ion implantation, respectively. In order to test the combined processed of these, high energy \ulcornerAs\ulcorner ion implantation and 2-step annealing process were adopted. After the ion implantation followed by 2-step annealing, the wafers were cleaved and etched with Wright etchant. The morphology of cross section on samples was inspected by FESEM. The concentration profile of As was measured by SRP. The location and type of secondary defects inspected by HRTEM were dependent on the 1st annealing temperatures. That is, a line of dislocation located at $1.5mutextrm{m}$ apart from the surface at $600^{\circ}C$ lst annealing was changed to some dislocation lines or loops nearby the surface at 100$0^{\circ}C$. The density of dislocation line was reduced but the size of the defects was enlarged as the temperature increased.

• Korean Journal of Materials Research
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• v.30 no.5
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• pp.246-251
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• 2020

The annealing characteristics of cold-rolled Al-6.5Mg-1.5Zn-0.5Fe-0.5Mn alloy, newly designed as an automobile material, are investigated in detail, and compared with those of other aluminum alloys. Using multi-pass rolling at room temperature, the ingot aluminum alloy is cut to a thickness of 4 mm, width of 30 mm, and length of 100 mm to reduce the thickness to 1 mm (r = 75 %). Annealing after rolling is performed at various temperatures ranging from 200 to 500 ℃ for 1 hour. The specimens annealed at temperatures up to 300 ℃ show a deformation structure; however, from 350 ℃ they have a recrystallization structure consisting of almost equiaxed grains. The hardness distribution in the thickness direction of the annealed specimens is homogeneous at all annealing temperatures, and their average hardness decreases with increasing annealing temperature. The tensile strength of the as-rolled specimen shows a high value of 496 MPa; however, this value decreases with increasing annealing temperature and becomes 338 MPa after annealing at 400 ℃. These mechanical properties of the specimens are compared with those of other aluminum alloys, including commercial 5xxx system alloys.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.12
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• pp.167-176
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• 2001

The effects of heat treatments and testing temperatures on the mechanical properties of Invar materials were investigated through experiments, which call influence the formability in metal forming fields. Annealing temperatures were changed from $900^{\circ}C$ to $1200^{\circ}C$ with an increment of $100^{\circ}C$ under two different furnace atmosphere(vacuum and H$_2$gas). Microstructure and hardness tests were performed for annealed specimens at room temperature(RT) and tensile tests were also performed by changing annealing temperatures as well as testing temperatures from RT to $300^{\circ}C$. The grain size of annealed materials increased with increasing annealing temperature, while micro-hardness distributions showed almost same hardness values regardless of annealing temperatures. Strength ratio (tensile/yield strength), which influences the forming characteristics of sheet metal, remained almost constant for various experimental conditions in case of unannealed specimens. However, it showed increasing tendency with increasing both annealing and testing temperatures, particularly at the testing temperature higher than $200^{\circ}C$. Therefore it can be concluded that press formability of fully-annealed Invar material can be improved by warm forming technique.

• Korean Journal of Metals and Materials
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• v.47 no.5
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• pp.316-321
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• 2009

Co nanoparticles on silica substrates were fabricated by inducing a thin-film dewetting through two different processes-furnace annealing and pulsed-laser annealing. The effects of annealing temperature, film thickness and laser energy density on dewetting morphology and mechanism were investigated. Co thinfilms with thicknesses between 3 to 15 nm were deposited using ion-beam sputtering, and then, in order to induce dewetting, thermally annealed in furnace at temperatures between 600 and $900^{\circ}C$. Some as-deposited films were irradiated using a Nd-YAG pulsed-laser of 266 nm wavelength to induce dewetting in liquid-state. Films annealed in furnace agglomerated to form nanoparticles above $700^{\circ}C$, and those average particle size and spacing were increased with an increase of film thickness. On the laser annealing process, above the energy density of $100mJ/cm^2$, metal films were completely dewetted and the agglomerated particles exhibited greater size uniformity than those on the furnace annealing process. A detailed dewetting mechanism underlaying both processes were discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.264-268
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• 2022

High pressure deuterium (HPD) annealing is an advancing technology for the fabrication of modern semiconductor devices. In this work, gate-enclosed FETs are fabricated on a silicon substrate as test vehicles. After a cycle for the HPD annealing, the device parameters such as threshold voltage (V_TH), subthreshold swing (SS), on-state current (I_ON), off-state current (I_OFF), and gate leakage (I_G) were measured and compared depending on the HPD. The HPD annealing can passivate the dangling bonds at Si-SiO₂ interfaces as well as eliminate the bulk trap in SiO₂. It can be concluded that adding the HPD annealing as a fabrication process is very effective in improving device reliability, performance, and variability.

• Applied Chemistry for Engineering
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• v.10 no.1
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• pp.35-40
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• 1999

The variations of the glass transition, melting peaks, molecular weight and its distribution (polydispersity index: PI) due to the annealing temperature and time have been investigated using the thermoplastic segmented polyurethanes (TPUs) and its blends based on the contents of hard segment. The position of the melting peak and its magnitude have been increased with the annealing temperature and time. This may be arised from the rearrangement of the microdomain structure due to the long-range or short-range segmental motion, the order-disorder transition of non-crystalline microphase, the variation of the domain size or the degree of disorder of crystalline structure by given different thermal histories. The annealing temperature and time affected the molecular weights and polydispersity : the number and weight average molecular weights were increased, while the polydispersity index (PI) deceased at certain temperatures : for TPU-35 at $135^{\circ}C$, for TPU-44 at $170^{\circ}C$ and for TPU-53 at $180^{\circ}C$. The temperatures which give the variations in molecular weights and in PIs are consistent with the annealing temperatures of which $T_3$ solely exists for each sample. Thus it is suggested that the chain dissosiation and recombination simultaneously occur at the above mentioned temperature for each sample.

• Journal of information and communication convergence engineering
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• v.3 no.3
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• pp.137-141
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• 2005

The paper presents some methods to improve characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on Bragg reflectors. Thermal treatments were done by sintering and/or annealing processes. The measurement showed a considerable improvement of return loss $(S_{11})$ and quality factor $(Q_{s/p}).$ These thermal treatment techniques seem very promising for enhancing FBAR resonance performance.

• Economic and Environmental Geology
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• v.28 no.3
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• pp.305-309
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• 1995

There is a deep and useful connection between thermodynamics (the behavior of systems with many degrees of freedom in thermal equilibrium at a finite temperature) and combinational or continuous optimization (finding the minimum of a given multiparameter function). At the heart of the method of simulated annealing is an analogy with the way that liquids freeze and crystallize, or metals cool and anneal. This paper provides a detailed description of simulated annealing. Although computationaly intensive, when it is carefully implemented, simulated annealing is found to give superior results to more traditional methods of nonlinear optimization.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1277-1280
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• 2007

Isothermal activation annealing was carried out using boron doped SLS poly-using an RTA system. We observed different behavior of reverse annealing depending on the implantation conditions.