• Journal of the Korean institute of surface engineering
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• v.33 no.2
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• pp.101-106
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• 2000

SOI (Silicon-On-Insulator) substrates were fabricated with varying annealing temperature of $25-660^{\circ}C$ by a linear annealing method, which was modified RTA process using a linear shape heat source. The annealing method was applied to Si ∥ $SiO_2$/Si pair pre-contacted at room temperature after wet cleaning process. The bonding strength of SOI substrates was measured by two methods of Razor-blade crack opening and direct tensile test. The fractured surfaces after direct tensile test were also investigated by the optical microscope as well as $\alpha$-STEP gauge. The interface bonding energy was 1140mJ/m$^2$ at the annealing temperature of $430^{\circ}C$. The fracture strength was about 21MPa at the temperature of $430^{\circ}C$. These mechanical properties were not reported with the conventional furnace annealing or rapid thermal annealing method at the temperature below $500^{\circ}C$. Our results imply that the bonded wafer pair could endure CMP (Chemo-Mechanical Polishing) or Lapping process without debonding, fracture or dopant redistribution.

• Korean Journal of Materials Research
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• v.21 no.3
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• pp.156-160
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• 2011

FePt nanoparticles suspension was synthesized by reduction of platinum acetylacetonate and decomposition of iron pentacarbonyl in the presence of oleic acid and oleyl amine. FePt nanoparticles were coated on a substrate by convective assembly from the suspension. To prevent the coalescence during the annealing of FePt nanoparticles double convective coatings were tried. First convective coating was for silica particle assembly on a silicon substrate and second one was for FePt nanoparticles on the previously coated silica layers. It was observed by scanning electron microscopy (SEM) that FePt nanoparticles were dispersed on the silica particle surface. After annealing at $700^{\circ}C$ for 30 minutes under nitrogen atmosphere, FePt nanoparticles on silica particles were maintained in a dispersed state with slight increase of particle size. On the contrary, FePt nanoparticles that were directly coated on silicon substrate showed severe particle growth after annealing due to the close-packing of nanoparticles during assembly. The size variation during annealing was also verified by X-ray diffractometer (XRD). It was suggested that pre-coating, which offered solvent flux oppose to the capillary force between FePt nanoparticles, was an effective method to prevent coalescence of nano-sized particles under high temperature annealing.

• Transactions on Electrical and Electronic Materials
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• v.9 no.4
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• pp.137-142
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• 2008

The parasitic resistance is studied to silicon/metal contact junction for improving device performance and to lower contact/serial resistance silicide in natural sequence. In this paper constructs the stepwise Ni silicide process for parasitic resistance reduction for silicon/metal contact junction. We have investigated multi-step Ni silicide on SiGe substrate with stepwise annealing method as an alternative to compose more thermally reliable Ni silicide layer. Stepwise annealing for silicide formation is exposed to heating environment with $5^{\circ}C/sec$ for 10 seconds and a dwelling for both 10 and 30 seconds, and ramping-up and the dwelling was repeated until the final annealing temperature of $700\;^{\circ}C$ is achieved. Finally a direct comparison for single step and stepwise annealing process is obtained for 20 nm nickel silicide through stepwise annealing is $5.64\;{\Omega}/square$ at $600\;^{\circ}C$, and it is 42 % lower than that of as nickel sputtered. The proposed stepwise annealing for Ni silicidation can provide the least amount of NiSi at the interface of nickel silicide and silicon, and it provides lower resistance, higher thermal-stability, and superior morphology than other thermal treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.395-397
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• 2002

Dielectric thin films of Pb$\_$0.72/La$\_$0.28/Ti$\_$0.93/O$_3$(PLT(28)) have been deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film. Structural properties including dielectric constant, and ferroelectric characteristics of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step process including pre-annealing treatment has a strong (111) orientation. However, the films deposited by using single-step process with hydrogen annealing process shows the smallest grain size.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.08a
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• pp.233-239
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• 2004

The effect of annealing temperature on microstructures and mechanical properties of the sheets received $88\%$ reduction at cryogenic temperature was investigated for the annealing temperature of $150\~300^{\circ}C$, in comparison with those at room temperature. The presence of equiaxed grains, whose size is about 200nm in a diameter, was observed in 5052 Al alloy deformed $88\%$ and annealed $200^{\circ}C$ for an hour. When compared with the deformation at room temperature, the deformation at cryogenic temperature showed the higher strengths and equivalent elongation after annealing at the annealing temperature below $200^{\circ}C$. However, for annealing above $250^{\circ}C$ materials deformed at cryogenic temperature showed the lower strength than those deformed at room temperature. This behavior might be attributed to the higher rate of recrystallization and growth in materials deformed at cryogenic temperature during annealing, due to the lager density of dislocations accumulated during the deformation.

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.881-892
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• 1995

Sol-Gel derived ferroelectric PZT thin films were fabricated on ITO/Glass substrate. Two kinds of rapid thermal annealing methods, R-I (six times of intermediate and final annealing) and R-II (one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. 2500$\AA$-thick PZT thin films were obtained by the R-I and R-II methods and characterized by microstructure and dielectric properties. In case of using R-II, the microstructure was finer than that of R-I and there was no distinguishable difference in dielectric properties of PZT thin films between the R-I and R-II methods. But dielectric properties were enhanced by increasing perovskite phase fraction with increasing annealing temperature. Measured dielectric constant of PZT thin film annealed at 62$0^{\circ}C$ using the R-I method was 256 at 1kHz. Its remanant polarization (Pr) and coercive field (Ec) were 14.4$\mu$C/$\textrm{cm}^2$ and 64kV/cm, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1016-1022
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• 2001

This study presents the microstructure-electrical property relationship of reactive-sputtered Ta$_2$O$_{5}$ MIM capacitor structure processed by annealing in a vacuum and $O_2$ ambience. A microstructural investigation showed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-Ta$_2$O$_{5}$ in $700^{\circ}C$ annealing. On annealing under the $O_2$ atmosphere, the Ta$_2$O$_{5}$ film exhibited the trend of its composition\`s approaching to stoichiometry from off-stoichiometry, analyzed by EPMA, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. In the case of low temperature vacuum-annealing treatment, the leakage current behavior was stable irrespective of applied electric field. In the high temperature-annealed film at a vacuum condition, the electrical properties was observed to deteriorate. The results state that in Ta$_2$O$_{5}$ film annealed at $O_2$ atmosphere, gives rise to improvement of electrical characteristics in the capacitor were improved by reducing oxygen-vacancy and dandling Ta-O bond.-O bond.

• Journal of the Korean Society for Heat Treatment
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• v.19 no.3
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• pp.149-155
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• 2006

The effects of eight types of spheroidizing annealing conditions including annealing temperature, annealing time, cooling rate, and gas atmosphere in the annealing furnace on the microstructure were determined in SM45C steel which has been widely used for automotive parts. The well-developed spheroidized structure and minimum hardness were obtained when the steel was heat-treated 6 hours at $740^{\circ}C$, cooled to $710^{\circ}C$ at a cooling rate of $24^{\circ}C/h$, and then kept for 7 hours at the $710^{\circ}C$ followed by air cooling. In order to increase the productivity and to save the manufacturing cost, it is desirable to apply a faster cooling rate in the spheroidizing annealing. It was found that air cooling was the fastest cooling rate applicable to the SM45C steel. The steel heat treated in air showed the decarburized layer of about $110{\mu}m$ in thickness at the surface of the specimen, resulting in serious problems in the quality of the quenched product.

• Journal of the Korean Society for Heat Treatment
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• v.19 no.5
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• pp.270-279
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• 2006

The effects of eight types of spheroidizing annealing conditions including annealing temperature, annealing time, cooling rate, and furnace atmosphere on the microstructure and hardeness were determined in SCM440 steel which has been widely used for automotive parts. The well-spheroidized structure and minimum hardness were obtained when the steel was heat-treated at $770^{\circ}C$ for 6 hours, cooled to $720^{\circ}C$ at a cooling rate of $24^{\circ}C/h$, and then kept for 7 hours at the $720^{\circ}C$ followed by air cooling. In order to increase the productivity and to save the manufacturing cost, it is desirable to apply a faster cooling rate to the spheroidizing annealing. It was found that a cooling rate of $100^{\circ}C/hr$ was the fastest cooling rate applicable to the SCM440 steel among the four cooling rates used in this study. The microstructure consisted of ferrite and very fine spheroidized cementite when the steel was annealed for 13 hours at $720^{\circ}C$ below $A_{C1}$ temperature. This was caused by the short annealing time and the retarding effect of Cr and Mo on both the dissolution of pearlite to cementite and coarsening of spheroidized cementite. The steel heat treated in air showed the decarburized layer of about $125{\mu}m$ in thickness at the surface.

• Korean Journal of Materials Research
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• v.30 no.1
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• pp.44-49
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• 2020

The effect of intercritical annealing temperature on the microstructure and mechanical properties of Fe-9Mn-0.2C-3Al-0.5Si medium manganese steels containing Cu and Ni is investigated in this study. Six kinds of medium manganese steels are fabricated by varying the chemical composition and intercritical annealing temperature. Hardness and tensile tests are performed to examine the correlation of microstructure and mechanical properties for the intercritical annealed medium manganese steels containing Cu and Ni. The microstructures of all the steels are composed mostly of lath ferrite, reverted austenite and cementite, regardless of annealing temperature. The room-temperature tensile test results show that the yield and tensile strengths decrease with increasing intercritical annealing temperature due to higher volume fraction and larger thickness of reverted austenite. On the other hand, total and uniform elongations, and strain hardening exponent increase due to higher dislocation density because transformation-induced plasticity is promoted with increasing annealing temperature by reduction in reverted austenite stability.