• 제목/요약/키워드: annealing effects

검색결과 889건 처리시간 0.029초

A Study of Magnetic Field Annealing on Microstructures and Magnetic Properties of Nanocomposite Sm-Co/Co Films

  • Yang, Choong-Jin;You, Cai-Yin;Zhang, Z.D.;Kim, Kyung-Soo;Han, Jong-Soo
    • Journal of Magnetics
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    • 제7권2호
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    • pp.45-50
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    • 2002
  • A magnetic field annealing is firstly used for nanostructured Sm-Co/Co films, prepared by magnetron sputtering method. The effects of magnetic field annealing on single-layered Sm-Co films are different from those on multi-layered Sm-Co/Co films. A detailed analysis of microstructures and magnetic properties is made by means of HRTEM, Auger electron spectroscopy, XRD and Physical Property Measurement System (PPMS). From magnetic properties and microstructure analysis, it was confirmed that these differences originate from the effects of magnetic field annealing on crystallization behavior of the films. The relationship between magnetic properties and microstructures explains a different demagnetization process of single-layered and multilayered films. For the single-layered Sm-Co films, magnetic-field-annealing makes the main phases change from $CaCu_5/ to Zn_2Th_{17}$ structure, resulting in a decrease of coercivity. The results show that the magnetic-field-annealing is useful to improve the properties of nanostructured Sm-Co(30 nm)/Co(10 nm) films, which ascribe to improving the pinning effectiveness in coercivity mechanism and decreasing the magnetostatic interaction of films. A very high coercivity about 0.7 T was obtained from nanoscaled multi-layered Sm-Co(30 nm)-/Co(10 nm) films.

FDM 3D프린팅 윤활유에 따른 내부응력 완화에 관한 연구 (Investigation of the Internal Stress Relaxation in FDM 3D Printing : vegetable lubricating oil)

  • 이선곤;김용래;김수현;강선호;김주형
    • 한국기계가공학회지
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    • 제18권2호
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    • pp.82-90
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    • 2019
  • In this paper, the effects of different 3D printing conditions including oil lubrication and annealing are observed for their effects on tensile testing. In 3D printing, a press-out extrude filament is rapidly heated and cooled to create internal stress in the printed part. The 3D printing internal stress can be removed using oil-coated filament and annealing. During the oven cooling at an annealing temperature of $106^{\circ}C$, the stress of the specimens with laminated angle $0^{\circ}$ tends to increase by 12.6%, and that of the oil-coated filament printing specimens is increased by 17%. At the annealing temperature of $106^{\circ}C$, the stress of the oil-coated filament printing specimens tends to increase by 35%. In this study, we have found that the oil lubrication and annealing remove the internal stresses and increase the strength of the printed specimens. The oil lubrication and annealing reform the crystalline structures to even out the areas of high and low stress, which creates fewer fragile areas. These results are very useful for the manufacture of 3D printing products with a suitable mechanical strength for applications.

Annealing Effects on Ultra thin MOS Capacitors

  • Ng, Alvin Chi-hai;Xu, Jun;Xu, J.B.;Cheung, W.Y.
    • E2M - 전기 전자와 첨단 소재
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    • 제16권9호
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    • pp.62.1-62
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    • 2003
  • Silicon oxide with thickness lee than 9 nm is fabricated by tube furnace oxidation. Nitrogen is added to dilute the oxidation rate. Aluminum dots with radius of 0.05 cm are deposited on the oixde. High frequency capacitance-voltage(HF C-V), conductance-voltage(G-V) and current-voltage(I-V) characteristics are measured. Annealing under nitrogen atmosphere is carried out with different time and at different temperature. Densities of the interface states before and after annealing are compared. After annealing, a decrease in density of the interface states is found. Experiments show that 45$0^{\circ}C$ annealing for 30 minutes has the lowest density of the interface states.

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PECVD로 제조된 비정질 질화탄소 박막의 물성에 미치는 열처리 효과 (Effects of Thermal Annealing on the Properties of Amorphous Carbon Nitride Films Deposited by PECVD)

  • 문형모;김상섭
    • 한국재료학회지
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    • 제13권5호
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    • pp.303-308
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    • 2003
  • Amorphous carbon nitride films deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition (PECVD) technique using CH$_4$and $N_2$as reaction gases were thermally annealed at various temperatures under$ N_2$atmosphere, then their physical properties were investigated particularly as a function of annealing temperature. Above $600^{\circ}C$ a small amount of crystalline $\beta$-$C_3$$N_4$ phase evolves, while the film surface becomes very rough due to agglomeration of fine grains on the surface. As the annealing temperature increases, both the hardness and the $sp^3$ bonding nature are enhanced. In contrast to our expectation, higher annealing temperature results in a relatively higher friction mainly due to big increase in roughness at that temperature.

Effects of Alternating Magnetic Field Assisted Annealing of Pentacene Film for Organic Thin Film Transistor Applications

  • Park, Jae-Hoon;Choi, Jong-Sun
    • Transactions on Electrical and Electronic Materials
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    • 제8권1호
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    • pp.32-35
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    • 2007
  • In this article, a novel annealing technique using alternating magnetic field (AMF) is adopted to improve the electrical characteristics of pentacene film, thereby enhancing the performance of pentacene-based organic thin film transistors (OTFTs). According to the investigation results, the electrical conductivity in the pentacene film could be increased from 0.32 to 1.18 S/cm by annealing the pentacene film using AMF. And also, OTFTs with the pentacene film annealed by AMF exhibited an improved performance compared to the device without annealing. These results suggest that an annealing using AMF can be an effective method to improve the performance of devices based on organic semiconductors.

Effect of Annealing on the Dielectric Properties and Microstructures of Thin Tantalum Oxide Film Deposited with RF Reactive Sputtering

  • 이경수;남기수;천창환;김근홍
    • ETRI Journal
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    • 제13권2호
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    • pp.21-27
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    • 1991
  • Effects of annealing on the dielectric properties and microstructures of thin tantalum oxide film(25nm) deposited on p-type Si substrate with rf reactive magnetron sputtering were investigated. The leakage current density was remarkably reduced from $10^-8$ to $10^-12$ A/$\mum^2$at the electric field of 2MV/cm after rapid thermal annealing(RTA) in $O_2$at $1000^{\circ}C$, while little leakage reduction was observed after furnace annealing in $O_2$ at $500^{\circ}C$. The structural changes of thin tantalum oxide film after annealing were examined using high resolution electron microscope(HREM). The results of HREM show that substantial reduction in the leakage current density after the RTA in $O_2$ can be attributed to crystallization and reoxidation of the thin amorphous tantalum oxide film.

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PLD법으로 제작된 (Ba, Sr) $TiO_3$ 박막의 후열처리에 따른 특성 변화 (Effects of Post-Annealing for the (Ba, Sr)$TiO_3$ Thin Films Prepared by PLD)

  • 김성구;주학림
    • 한국전기전자재료학회논문지
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    • 제13권1호
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    • pp.28-32
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    • 2000
  • Structural and electrical properties of (Ba, Sr)TiO\ulcorner (BST) thin films prepared by pulsed laser depositon were investigated to verify the influences of post-annealing in oxygen ambient. Increase of post-anneal-ing time in oxygen ambient resulted in not only grain growth but also improvement of crystallinity of BST films. Although the post-annealing in oxygen ambient resulted in the increase of surface roughness, it assisted the dielectric constant increase by eliminating oxygen vacancies. The electrical property enhancement including high dielectric constant and low leakage current density was associated with introducing high pressure of oxygen during the post-annealing.

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ZnO:Er막의 UV 발광에 미치는 열처리 효과 (Annealing effects of ZnO:Er films on UV emission)

  • 최무희;마대영
    • 센서학회지
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    • 제18권4호
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    • pp.316-321
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    • 2009
  • Er-doped ZnO(ZnO:Er) films were deposited onto MgO wafers by ultrasonic spray pyrolysis at 550 $^{\circ}C$ varying the concentration of Er in the deposition source from 0.5 wt% to 3.0 wt%. Annealing of the films in a vacuum was carried out to increase the intensity of ultraviolet(UV) emission from the films. The annealing temperature was between 600$^{\circ}C$ and 800$^{\circ}C$. The crystallographic properties and surface morphology of the films were investigated by X-ray diffraction(XRD)and scanning electron microscope(SEM), respectively. The properties of photoluminescence(PL) for the films were investigated by the dependence of PL spectra on the annealing temperature. X-ray photoelectron spectroscopy(XPS) was conducted to find the composition change in the films by the annealing.

Annealing에 의한 나노구조 박막의 전기적 특성 연구 (Annealing Effects on Electron Transport properties of Nanostructured Thin Film)

  • 고태준
    • 한국자기학회지
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    • 제16권1호
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    • pp.98-101
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    • 2006
  • 결정립으로 이루어 진 나노구조 Pb 박막의 전기적 특성을 정상 면저항 측정을 통하여 연구하였다. 나노구조 박막은 저온 상의기판 위에 10nm이하의 두께로 증착되었으며, 1.3K부터 상온까지 박막의 온도를 변화시키면서 정상 면저항의 변화를 측정하였다. 열처리 온도에 따라 정상 면저항은 비 단조적하며 비가역적인 변화를 보였으며, 이러한 변화들은 열처리에 따른 나노구조 박막을 구성하고 있는 Pb 결정립의 크기변화로써 이해할 수 있다.

펄라이트 강선의 어닐링 조건이 딜라미네이션 발생에 미치는 영향 (The Effect of Annealing Condition on the Occurrence of the Delamination in Pearlitic Steel Wires)

  • 박대범;이중원;남원종
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2007년도 추계학술대회 논문집
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    • pp.120-123
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    • 2007
  • The effects of annealing condition on the occurrence of the delamination in cold drawn hyper-eutectoid steel wires, were investigated. Annealing treatment was performed on cold drawn steel wires for temperature range of $425^{\circ}C\sim500^{\circ}C$ with the variation of annealing time from 30sec to 15min. The increase of annealing temperature and time would cause the decrease of tensile strength and the increase of ductility. However, the occurrence of the delamination, representing torsional ductility, showed the different way from the variation of ductility.

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