• Journal of information and communication convergence engineering
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• 제1권4호
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• pp.199-204
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• 2003

In this paper, we present the thermal annealing effects of the W/$SiO_2$ multi-layer reflectors in ZnO-based FBAR devices with cobalt (Co) electrodes in comparison with those with aluminum (Al) electrodes. Various thermal annealing conditions have been implemented on the W/$SiO_2$ multi-layer reflectors formed on p-type (100) silicon substrates. The resonance characteristics could be significantly improved due to the thermal annealing and were observed to depend strongly on the annealing conditions applied to the reflectors. Particularly, the FBAR devices with the W/$SiO_2$ multi- layer reflectors annealed at $400^{\circ}C$/30min have shown superior resonance characteristics in terms of return loss and quality-factor (Q-factor). In addition, the use of Co electrodes has resulted in further improvement of the resonance characteristics as compared with the Al electrodes. As a result, the combined use of both the thermal annealing and Co electrodes seems very useful to more effectively improve the resonance characteristics of the FBAR devices with the W/$SiO_2$ multi-layer reflectors.

• Bulletin of the Korean Chemical Society
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• 제32권3호
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• pp.939-942
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• 2011

Conductive carbon films were prepared at room temperature by unbalanced magnetron sputtering (UBMS) on silicon substrates using argon (Ar) gas, and the effects of post-annealing temperature on the structural, tribological, and electrical properties of carbon films were investigated. Films were annealed at temperatures ranging from $400^{\circ}C$ to $700^{\circ}C$ in increments of $100^{\circ}C$ using a rapid thermal annealing method by vacuum furnace in vacuum ambient. The increase of annealing temperature contributed to the increase of the ordering and formation of aromatic rings in the carbon film. Consequently, with increasing annealing temperature the tribological properties of sputtered carbon films are deteriorated while the resistivity of carbon films significantly decreased from $4.5{\times}10^{-3}$ to $1.0{\times}10^{-6}\;{\Omega}-cm$ and carrier concentration as well as mobility increased, respectively. This behavior can be explained by the increase of sp2 bonding fraction and ordering $sp^2$ clusters in the carbon networks caused by increasing annealing temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.885-888
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• 2000

The effects of deposition temperature and post annealing process of ferroelectric PbZr$\sub$0.52/Ti$\sub$0.48/O$_3$(PZT) thin films by pulsed laser deposition (PLD) were investigated. The PZT thin films were deposited at 400, 450, 500, and 550$^{\circ}C$, with/without post annealing at 650$^{\circ}C$ for 30 min. The PZT thin films deposited above 500$^{\circ}C$ without post annealing were crystallized into peroveskite phase, but the PZT thin films deposited below 450$^{\circ}C$ had pyrochlore phase. The PZT thin films deposited below 450$^{\circ}C$ with post annealing also crystallized into pure perovskite. Compared to the PZT thin films which were deposited at 450$^{\circ}C$ and post annealed, the films deposited at 550$^{\circ}C$ have a columnar microstructure and high remnant polarization 28 (${\mu}$C/cm$^2$). With in-situ annealing at oxygen ambient, the PZT thin films reduced oxygen vacancies and increased retained polarization.

• 한국재료학회지
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• 제19권6호
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• pp.313-318
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• 2009

Polymer Light Emitting Diodes (PLEDs) with an ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structure were prepared on plasma-treated ITO/glass substrates using spin-coating and thermal evaporation methods. The annealing effects of the PFO-poss film when it acts as the emission layer were investigated by using electrical and optical property measurements. The annealing conditions of the PFO-poss emission film were 100 and $200^{\circ}C$ for 1, 2 and 3 hours, respectively. The luminance increased and the turn-on voltage decreased when the annealing temperature and treatment time increased. After examining the Luminance-Voltage (L-V) properties of the PLED, the maximum luminance was found to be 1497 cd/$m^2$ at 11 V for the device when it was annealed at $200^{\circ}C$ for 3 hours. The peak intensity of the PLED emission spectra at approximately 525 nm in wavelength increased when the annealing temperature and time of the PFO-poss film increased. These results suggest that the light emission color shifted from blue to green.

• 한국인터넷방송통신학회논문지
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• 제10권1호
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• pp.7-13
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• 2010

질소 분위기하에서 분자선 에피탁시 장치로 성장한 GaN 에피층을 고온 열처리 하였다. 시료는 적절한 조건하에서 급속 열처리 후 구조적인 특성의 향상을 나타내었다. 시료의 결정성의 향상은 에피층의 격자 관련 요소들의 흐트러짐의 감소에 기인한다. 에피층의 열처리는 950도의 급속 열처리로를 이용하여 수행하였다. 고온 급속 열처리가 GaN 에피층의 구조적인 특성들에 미치는 효과는 x선 회절을 통하여 연구하였다. x선 회절 스펙트럼에 있어서 Bragg 피크는 열처리 시간이 증가할수록 각도가 큰 쪽으로 이동하였다. 또한 피크의 FWHM은 열처리 시간이 증가함에 따라 약간의 증가 후 감소하였으며 이후 다시 증가하였다. 이와 같은 결과는 급속 고온 열처리된 GaN 에피층에서 격자 상수에 영향을 미치는 인자들이 에피층의 품질을 좋게 하는 방향으로 일률적으로 변화하는 것이 아니라 에피 품질을 나쁘게 하는 방향으로도 변화한다는 것을 의미한다. 적절한 조건 하에서의 급속 열처리는 에피층의 격자 상수에 관여하는 인자들의 흐트러짐을 감소시켜 에피 결정의 질을 향상시킨다.

• 열처리공학회지
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• 제21권6호
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• pp.293-299
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• 2008

In order to provide with fundamental data of the wrought Mg alloy for press forging, the effect of annealing temperature on the microstructure, texture development and tensile properties is studied in a commercial AZ31B Mg alloy sheet. Basal texture i.e. $(0001){\pm}5^{\circ}$[21$\bar{3}$0] is developed in a commercial AZ31B Mg sheet, and the texture is not changed considerably by annealing over $400^{\circ}C{\times}30min$, while (10$\bar{3}$0) component with high intensity can be observed due to abnormal grain growth. When the sheet is tensile-deformed with RD, $45^{\circ}$ and TD directions at room temperature, fracture strains are given by 25.8, 21.4 and 11.9% in the order of RD, $45^{\circ}$ and TD directions, respectively. With increasing annealing temperature up to $450^{\circ}C{\times}30min$, little change in mean grain size can be revealed by annealing below $300^{\circ}C{\times}30min$ but an abnormal grain growth, where some grains become significantly coarser than the rest, occurs by annealing above $400^{\circ}C{\times}30min$. The maximum tensile strain of around 25% is obtained by annealing below $300^{\circ}C{\times}30min$, but it is abruptly decreased to 16% by annealing above $400^{\circ}C{\times}30min$ owing to intergranular fracture of abnormal grown grains.

• 전기전자학회논문지
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• 제23권2호
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• pp.704-709
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• 2019

본 논문에서는 다양한 열처리(annealing) 조건에서 tunneling field effect transistor(TFET)의 전기적 특성을 연구 하였다. TFET 샘플은 수소 혼합 가스(4 %) 및 중수소($D_2$) 혼합 가스 (4 %)를 사용하여 열처리를 진행하였으며 측정은 노이즈 차폐실에서 진행되었다. 실험 결과, 열처리 전과 비교하여 열처리 공정 후에 subthreshold slope(SS)이 33 mV / dec만큼 감소함을 확인할 수 있었다. 그리고 측정 온도 범위에서 온도가 증가할수록 $V_G=3V$ 조건에서 10 기압의 중수소 혼합 가스에 대해 평균 31.2 %의 노이즈가 개선됨을 확인할 수 있었다. $D_2$ 혼합 가스로 메탈 증착 후 열처리 공정(post metal annealing)을 실시한 결과, $I_D=100nA$ 조건에서 평균 30.7 %의 노이즈가 감소되었음을 확인할 수 있다.

• 한국식품저장유통학회지
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• 제19권2호
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• pp.216-222
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• 2012

옥수수 전분의 인산화 가교반응에 의한 RS4 제조 시 최적 annealing 조건을 검토하였다. 전분유에 NaOH를 0.9%, 1.2%, 1.5%/st.ds의 농도가 되게 첨가하고 복합인산염(STMP/STPP 혼합)을 이용하여 인산화 가교반응 할 경우 NaOH 농도가 높을수록 반응 초기에 RS 함량이 빠르게 증가되었으나 NaOH 농도에 상관없이 반응 12시간 후에는 비슷한 RS 함량을 나타내었다. 전분유의 Annealing 처리는 인산화 가교반응 전에 실시하였다. 전분유를 pH 2-10, 온도 $40-60^{\circ}C$, 0-14시간으로 처리한 후 인산화 가교반응을 하였다. Annealing 처리시 pH가 낮을수록 RS 함량이 높아지는 결과를 보였으며 pH 2에서 annealing 온도 $50^{\circ}C$, 2시간 annealing에서 최고의 RS 함량을 나타내었다. 따라서 최적 인산화 가교반응 조건은 먼저 pH 2.0, $50^{\circ}C$에서 2시간 annealing 처리를 한 후 황산나트륨 농도 10%/st.ds, NaOH 농도 1.2%/st.ds 조건에서 12시간 인산화 가교반응을 행하는 것으로 생각된다. RS 함량은 인산염 투입량이 증가함에 따라 직선적으로 증가하였다. 본 연구결과에 의한 최적조건을 활용하여 복합인산염 10%/st.ds의 농도로 RS4를 제조한 결과 RS 함량은 72.3% 였으며 인의 함량은 0.36%/st.ds로 한국 식품첨가물 공전에 적합하여 식품용 소재로 활용이 가능할 것으로 사료된다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1627-1630
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• 2004

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300{\sim}450^{\circ}C$ and flow rate of 100${\sim}$700 seem. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD) and the optical properties of the ZnO were characterized by photoluminescence(PL).

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2001년도 제4회 압출 및 인발가공 심포지엄
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• pp.55-62
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• 2001

An electrolytic copper rod was drawn up to $90\%$ in area reduction and annealed under various conditions. The EBSD measurement of the drawn wire showed that in the center region the <111> + <100> fiber duplex texture was dominant, while in the middle and surface regions relatively defused textures developed with a little higher density in <11w>//wire axis. The inhomogeneous texture in the deformed wire gave rise to the inhomogeneous microstructure and texture after annealing. The annealing texture could be classified into the recrystallization texture developed during low temperatures and at the early stage at a high temperature and the growth texture developed after a prolonged annealing at the high temperature. The recrystallization temperature could be explained by the strain energy release maximization model and the growth texture was discussed based on the grain boundary mobility anisotropy.