Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Effects of post-annealing treatment of ZnO Thin Films by Pulsed Laser Deposition

PLD를 이용한 ZnO 박막의 후열처리에 관한 연구

  • Kim, Jae-Hong (Department of Electrical Engineering Inha University) ;
  • Lee, Cheon (Department of Electrical Engineering Inha University)
  • 김재홍 (인하대학교 전기공학과 레이저연구실) ;
  • 이천 (인하대학교 전기공학과 레이저연구실)
  • Published : 2004.07.14
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Abstract

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300{\sim}450^{\circ}C$ and flow rate of 100${\sim}$700 seem. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD) and the optical properties of the ZnO were characterized by photoluminescence(PL).

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