• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.209-212
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• 2001

High quality Taros thin films have been obtained from anodizing. The as-deposited amorphous films have excellent physical and electrical properties: refractive indices ~2.15, dielectric constants ~25, and leakage currents <10$^{-8}$ Ac $m^{-2}$ at 1MV $cm^{-1}$ , 700$\AA$ thickness. We fabricated a MIM element with theses T $a_2$ $O_{5}$ films which had perfect current-voltage symmetry characteristics using a new process technology which was post annealing of whole MIM element instead of conventional annealing conditions (top-electrode metals, annealing conditions) on the capacitor performances were extensively discussed throughout this work.k.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2000.04a
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• pp.202-205
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• 2000

The effect of two step cold rolling and intermediate annealing conditions on the microstructure and texture evolution in type 430 stainless steel has been investigated tin order to improve ridging characteristic and deep drawability. The rolling and recrystallization textures were examined by orientation distributionfunction(ODF) and electron backscattered diffraction(EBSD). The observation showed that the intensity of ${\gamma}$-fiber was increased with two-step cold rolling process and so ridging characteristic and deep drawability were considerably improved. The relation between these properties an texture evolution has been discussed.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1810-1815
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• 2003

Tube hydroforming provides a number of advantages over conventional stamping process, including fewer secondary operation, weight reduction, assembly simplification, adaptability to forming of complex structural components and improved structural strength and stiffness. In this study, the effect of the heat treatment on the hydro-formability has been investigated. By using the mild steel tube bulging test is performed at various heat treatment conditions to evaluate the hydro-formability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.224-227
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• 1996

Platinum thin films were deposited on Si-wafer by DC magnetron sputtering for RTD (Resistance Thermometer Devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity were decreased wish increasing the temperature of substrate and the annealing time at 1000$^{\circ}C$. At substrate temperature 300$^{\circ}C$, input power 7(w/$\textrm{cm}^2$), working vacuum 5mtorr and annealing conditions 1000$^{\circ}C$, 240 min we obtained 10.65${\mu}$Ω$.$cm, resistivity of Pt thin film closed to the bulk value.

• Proceedings of the KOSOMBE Conference
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• v.1997 no.11
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• pp.361-364
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• 1997

Bayesian MAP-EM approaches have been quite useful or tomographic reconstruction in that they can stabilize the instability of well-known ML-EM approaches, and can incorporate a priori information on the underlying emission object. However, MAP reconstruction algorithms with expressive priors often suffer from the optimization problem when their objective unctions are nonquadratic. In our previous work [1], we showed that the use of deterministic annealing method greatly reduces computational burden or optimization and provides a good solution or nonquadratic objective unctions. Here, we further investigate the convergence of the deterministic annealing algorithm; our experimental results show that, while the solutions obtained by a simple quenching algorithm depend on the initial conditions, the estimates converged via deterministic annealing algorithm are consistent under various initial conditions.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.911-917
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• 1996

Platinum thin films were deposited on Si-wafer by DC rnagnetron sputtering for RTD (resistance thermometer devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity and sheet resistivity were decreased with increasing the temperature of substrate and the annealing time at 1000.deg. C. At substrate temperature of >$300^{\circ}C$, input power of 7 w/cm$^{2}$, working vacuum of 5 mtorr and annealing conditions of 1000.deg. C and 240 min, we obtained 10.65.mu..ohm..cm, resistivity of Pt thin films and 3800-3900 ppm/.deg. C, TCR(temperature coefficient of resistance). These values are close to the bulk value. These results indicate that the Pt thin films deposited by DC magnetron sputtering have potentiality for the development of Pt RTD temperature sensor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.17-20
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• 2000

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. Triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\_$p/ (Projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.242-244
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• 1996

Platinum thin films were deposited on Si-wafer by DC magnetron sputtering for RTD (Resistance Thermometer Devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The Resistivity and Sheet Resistivity were decreased with increasing the temperature of substrate and the annealing time at $1000^{\circ}C$. At substrate temperature $300^{\circ}C$, input power 7(w/$cm^2$), working vacuum 5mtorr and annealing conditions $1000^{\circ}C$, 240min we obtained $10.65{\mu}{\Omega}{\cdot}cm$, Resistivity of Pt thin film and $3000{\sim}3900ppm/^{\circ}C$, TCR(temperature coefficient of resistance) closed to the bulk value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.357-357
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• 2010

The electrical characteristics of ZnO thin film transistor (TFT) were investigated. ZnO thin layer was deposited by DC sputtering method and TFTs with ZnO channel layer were fabricated. On/off current ratio and saturated drain current of fabricated devices were improved by annealing in nitrogen ambient at various temperatures. As a result, the electrical characteristics of ZnO TFT were improved by post annealing in nitrogen ambient and it is important to optimize the annealing conditions for ZnO TFT fabrication.

• Journal of the Korean Society for Heat Treatment
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• v.7 no.3
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• pp.175-183
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• 1994

The effect of batch annealing conditions and austenitizing temperatures on the hardness and microstructural factors were examined by using 420J2 martensitic stainless steel. In spite of the similler hardness after batch annealing, the difference in hardness at the same austenitizing temperature was caused by changes in dissolved carbon during batch annealing. The highest hardness of the specimen was obtained at the batch annealing temperature of $820^{\circ}C$ and austenitizing temperature of $1050^{\circ}C$. The main factor affecting the final hardness of the cold annealed 420J2 specimen was proved to the austenitizing temperature rather than batch annealing temperature.