Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)
- Volume 9 Issue 9
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- Pages.911-917
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- 1996
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
The study on formation of platinum thin films for RTD temperature sensor
측온저항체 온도센서용 백금박막의 형성에 관한 연구
Abstract
Platinum thin films were deposited on Si-wafer by DC rnagnetron sputtering for RTD (resistance thermometer devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity and sheet resistivity were decreased with increasing the temperature of substrate and the annealing time at 1000.deg. C. At substrate temperature of