Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Optimization of down stream plasma ashing process

감광제 건식제거공정의 최적화

  • 박세근 (인하대학교 반도체 및 박막기술연구소 전자재료공학과) ;
  • 이종근 (인하대학교 반도체 및 박막기술연구소 전자재료공학과)
  • Published : 1996.11.01
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Abstract

A downstream oxygen plasma is generated by capacitively coupled RF power and applied to photoresist stripping. Stripping rate (ashing rate) is measured in terms of RF power, chamber pressure, oxygen flow rate and temperature. Ashing reaction is thermally activated and depends on oxygen radical density. The ashing process is optimized to have the high ashing rate, good uniformity and minimal plasma damage using a statistical method.

Keywords