• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.46.1-46.1
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• 2010

Surface passivation of crystalline silicon(c-Si) surface with a-Si:H thin films has been investigated by using quasi-steady-state photo conductance(QSSPC) measurements. Analyzing the influence of a-Si:H film thickness, process gas ratio, deposition temperature and post annealing temperature on the passivation properties of c-Si, we optimized the passivation conditions at the substrate temperature of $200-250^{\circ}C$. Best surface passivation has been obtained by post-deposition annealing of a-Si:H film layer. Post annealing around the deposition temperature was sufficient to improve the surface passivation for silicon substrates. We obtained effective carrier lifetimes above 5.5 ms on average.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.124-124
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• 2009

We observed the changes of crystal structure of Rubrene (5,6,11,12-tetraphenylnaphthacene) polycrystal thin films at various in situ substrate temperature and process by scanning electron microscope(SEM), x-ray diffraction (XRD) and near-field microwave microprobe (NFMM). Amorphous rubrene thin film was initially obtained on 200 nm thick $SiO_2/Si$ substrate at 35 $^{\circ}C$ in a vacuum evaporation but in situ long time postannealing at the temperature 80 $^{\circ}C$ transformed the amorphous phase into crystalline. Four heating conditions are followed : (a) preheating (b) annealing (c) preheating, annealing (d) preheating, cooling(35 $^{\circ}C$), annealing. We have obtained the largest polycrystal disk in sample (c). But the highest crytallity and conductivity of the rubrene thin films were obtained in sample (d).

• Journal of Microbiology and Biotechnology
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• v.10 no.5
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• pp.651-655
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• 2000

Polymerase chain reaction (PCR) was used to specifically detect Phytophthora infestans by analyzing the sequences of the ribosomal internal transcribed spacer regions (ITS) in the rDNA of the Phytophthora species. Based on the sequence data, PISP-1 together with the ITS3 primer were used to detect p. infestans. A single ca. 450 bp segment was observed in P. infestans, but not in the other fungal or bacterial isolates. Two factors, the annealing temperature and template DNA quantity, were investigated to determine the optimal conditions. Using these species-specific primers, a unique band was obtained within annealing temperatures of $55^{\circ}C$-$61^{\circ}C$ and template DNA levels of 10 pg-100 ng.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.459-466
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• 2000

For the applications in the ultra-large-scale-integration (ULSI) metallization processing copper thin films have been prepared by metal organic chemical vapor deposition (MOCVD) technology on TiN/Si substrates. The films have been deposited with varying the experimental conditions of substrate temperatures and copper source vapor pressures. The films were then annealed in a vacuum condition after the deposition and the annealing effect to the electrical conductivity of the films was measured. The grain size and the crystallinity of the films were observed to be increased by the post annealing and the electrical conductivity was also increased. The best electrical property of the copper film was obtained by in-situ annealing treatment at above 40$0^{\circ}C$ for the sample prepared at 18$0^{\circ}C$ of the substrate temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.126-127
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• 2008

The effects annealing conditions on the electrical conductions of SOI substrate were studied. The reversible change of resistance and carrier concentration in accordance with the annealing temperature were observed for the first time in SOI substrate. The thermal donors due to interstitial oxygen atoms contribute the change of resistance and carrier concentration. Final1y, we show that the furnace annelaing at $500^{\circ}C$ at final heat treatment stage is effective for eliminate the thermal donor effects in SOI substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.102-102
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• 1999

Visible photoluminescence(PL) in si-implanted SiO2 films on crystaline silicon were observed. Thermal oxide films of 1 ${\mu}{\textrm}{m}$ thickness on P-type crystal silicon were made and si+ ions were implanted with 200keV acceleration voltage on ti. Argon laser (wavelength 488nm) and PM tube were used for PL measurements. As annealing time increased at low temperature, the visible PL intensity are increased and the peak positions are changed. On the other hand, with increasing annealing time at high temperature, the visible PL intensity are disappeared. From the PL peaks and intensity changes, XRD results, and TEM observations, we will discuss the origin of PL in Si+-implanted SiO2 films with oxygen righ defects and silicon rich defects.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1151-1152
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• 2015

Silicon zinc oxide (SZO) thin films were deposited via co-sputtering. Two kinds of post-treatment, furnace annealing and hot pressing, were carried out on the deposited SZO films. The effects of the post-treatment on the chemical bond and surface roughness of the deposited SZO films were analyzed as functions of the post-treatment conditions that were used. It was observed from the X-ray photoelectron spectroscopy (XPS) results that the amount of Si-O bonds in the SZO film drastically increased after the low-temperature furnace annealing. The experiment results showed that the hot pressing method would be favorable as it could improve the electrical characteristics of the SZO-TFTs.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1140-1140
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• 2015

In this paper, the MIM thin films were deposited on Si substrate by sputtering method. And MIM thin films were annealed at $400{\sim}600^{\circ}C$ using RTA. The capacitance density of MIM thin films were increased with the increase of annealing temperature. The maximum capacitance density of $0.62{\mu}F/cm^2$ was obtained by annealing temperature at $600^{\circ}C$. The voltage dependence of dielectric loss showed about 0.03 in voltage ranges of -10~+10 V.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.1
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• pp.63-68
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• 2015

Pattern layout design is very important to the automation of apparel industry. Until now, the genetic algorithm and Tabu search method have been applied to layout design automation. With the genetic algorithm and Tabu search method, the obtained values are not always consistent depending on the initial conditions, number of iterations, and scheduling. In addition, the selection of various parameters for these methods is not easy. This paper presents a hybrid search method that uses a neural network and simulated annealing to solve these problems. The layout of pattern elements was optimized to verify the potential application of the suggested method to apparel pattern layout design.

• Korean Journal of Materials Research
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• v.27 no.5
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• pp.242-247
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• 2017

ZnO film was prepared on a p-type Si wafer and then annealed at various temperatures in air and vacuum conditions to research the electrical properties and bonding structures during the annealing processes. ZnO film annealed in atmosphere formed a crystal structure owing to the suppression of oxygen vacancies: however, ZnO annealed in vacuum had an amorphous structure after annealing because of the increment of the content of oxygen vacancies. Schottky contact was observed for the ZnO annealed in an air. O 1s spectra with amorphous structure was found to have a value of 529 eV; that with a crystal structure was found to have a value of 531.5 eV. However, it was observed in these results that the correlation between the electronic characteristics and the bonding structures was weak.