• Title/Summary/Keyword: and he ne laser light

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Holographic grating formation of Ag/AsGeSeS multi layer (Ag/AsGeSeS 다층 박막의 홀로그래픽 격자 형성)

  • Na, Sun-Woong;Park, Jong-Hwa;Yeo, Cheol-Ho;Shin, Kyoung;Lee, Young-Jong;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.133-136
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    • 2001
  • In this paper, we investigated the diffraction efficiency of polarization holography using by amorphous $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer thin films by He-Ne laser. Multi-layer structures were formed by alternating a layer of meta1(Ag) and chalcogenide( $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ ). The holographic grating in these thin flims has been formed using a linealy polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two sample of $Ag/As_{40}Ge_{10}Se_{15}S_{35}-7$ layers and $Ag/As_{40}Ge_{10}Se_{15}S_{35}-15$ layers. As the results, we found that the diffraction efficiency of $Ag/As_{40}Ge_{10}Se_{15}S_{35}-7$ layers and $Ag/As_{40}Ge_{10}Se_{15}S_{35}-15$ layers were 1.7% and 2.5% respectively.

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Holographic grating formation of Ag/AsGeSeS multi layer (Ag/AsGeSeS 다층 박막의 홀로그래픽 격자 형성)

  • Na, Sun-Woong;Park, Jong-Hwa;Yeo, Cheol-Ho;Shin, Kyong;Lee, Young-Jong;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.133-136
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    • 2001
  • In this paper, we investigated the diffraction efficiency of polarization holography using by amorphous Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ multi-layer thin films by He-Ne laser. Multi-layer structures were formed by alternating a layer of metal(Ag) and chalcogenide(As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/). The holographic grating in these thin films has been formed using a lineally polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two sample of Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-7 layers and Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-15 layers. As the results, we found that the diffraction efficiency of Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-7 layers and Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-15 layers were 1.7% and 2.5% respectively

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A Study of Response Characteristics and False Counts in Optical Particle Counter (광학 입자 계수기의 응답특성 및 오계수에 관한 연구)

  • 안강호;이재헌
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.16 no.3
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    • pp.547-554
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    • 1992
  • Response characteristics and false counts of laser and white light optical particle counters (OPC) have been studied as a function of particle size using monodisperse polystylen laterx (PSL) particles. Theoretical light scattering calculations for He-Ne laser based counter have been compared with the experimental results and thus good agreements have been found. The light scattering intensity in monochromatic light shows an oscillatory character for the transparent and spherical particles of PSL due to Mie resonance. Because of this effect, the response of the LAS-X OPC showed almost same responses in the diameter ranges of 0.4mu.m to 0.6mu.m and 0.7mu.m to 1.0mu.m for PSL particles. A laser optical particle counter with high flow rate applied for clean room has been studied to identify the noise sources. Three different manufacturer's clean room optical particle counters alos have been tested to measure the background noise level.

The setup of the moiré deflectometry using the virtual grating and the measurement of the effective focal length (가상격자를 사용한 무아레 무늬 발생기의 구성과 유효초점거리 측정)

  • Kim, Sang Gee
    • Journal of Korean Ophthalmic Optics Society
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    • v.5 no.2
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    • pp.181-186
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    • 2000
  • The setup of the moir$\acute{e}$ deflectometry using the virtual grating was done, so the convergence and divergence of a pencil of ray was determined. The light source was He-Ne laser(3mW). The focal length of the first lens, the second lens being 18 mm, 250 mm respectively was used for the setup of the beam expander. The optics of the moir$\acute{e}$ deflectometry determining the vergence was used a diffraction grating(pitch = $1.6{\mu}m/line$) and a front flat reflection mirror. The effective focal length of the trial lens set was measured and compared with the theoretical value.

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Development of Interferometer for Performance Assessment of IR Optical System (적외선 광학계통 성능평가를 위한 간섭계 개발)

  • 홍경희;고재준;이성태;장세안;오명호
    • Korean Journal of Optics and Photonics
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    • v.2 no.4
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    • pp.179-185
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    • 1991
  • Twyman-Green interferometer is developed for assessment of IR optical system performance. Light source is $CO_2$ gas laser which has 10.6$\mu \textrm m$ wavelength. The light beam is expanded to 2.5 cm dia by Ge lens and splitted by ZnSe parallel plane plate. One of the beams is reflected by refernce mirror which is operated PZT. The fringe will be detected by a pyro-electric vidicon camera and displayed by a CRT monitor. Here, the IR firinge is recorded on the thermal paper. In visible region, the light source is He-Ne laser. The fringe is detected by a CCD camera and displayed by the CRT monitor. The intensity of the fringe is digitized by a image card and processed by a PC. The wavefront aberration function, PSF and OTF are calculated. The results are displayed in 3-D graphs on the monitor or printed out by a line printer.

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Design and Fabrication of Micro SLM for Phase and Amplitude Modulation (위상 및 방향 변조를 위한 초소형 광 변조기의 설계와 제작)

  • Chung, Seok-Whan;Kim, Yong-Kweon
    • Proceedings of the KIEE Conference
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    • 1999.07g
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    • pp.3298-3300
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    • 1999
  • In this paper, a $10{\times}10$ micro SLM array for phase and amplitude modulation of incident light is designed and fabricated using surface micromachining technology. Hidden spring structure is used in order to maximize the fill-factor and minimize diffraction effect at the support posts. Static and dynamic characteristics of designed micro SLM are simulated with ABAQUS and measured with optical measurement system using He-Ne laser and PSD(position sensitive devise).

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Optical Control of GaAs MESFET with Optical Effect (광효과를 이용한 GaAs MESFET의 광 제어)

  • 이승엽;장용성;문호원;박한규
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.12
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    • pp.2025-2031
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    • 1989
  • In this paper, using optical effect of characteristics of GaAs compound, two potential application of optical controlled GaAs MESFET are demonstrated` detector, microwave amplifier gain control. These lead to the possibility of the interaction with optical devices. The preliminary experiments show the light induced voltage, the increase in the drain currnet and the change in the microwave scattering parameters of GaAs MESFET under optical illumination(He-Ne laser). And imcrowave amplifier gain is round to be varied with changing in intensity of optical illumination.

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Reflection-type Optical Waveguide Index Profiling Technique

  • Youk YoungChun;Kim Dug Young
    • Journal of the Optical Society of Korea
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    • v.9 no.2
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    • pp.49-53
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    • 2005
  • We report a new configuration of a reflection-type confocal scanning optical microscope system for measuring the refractive index profile of an optical waveguide. Several improvements on the earlier design are proposed; a light emitting diode (LED) at 650 nm wavelength instead of a laser diode (LD) or He-Ne laser is used as a light source for better index precision, and a simple longitudinal linear scanning and curve fitting techniques are adapted instead of a servo control for maintaining an optical confocal arrangement. We have obtained spatial resolution of 700 nm and an index precision of $2\times10^{-4}$. To verify the system's capability, the refractive index profiles of a conventional multimode fiber and a home-made four-mode fiber were examined with our proposed measurement method.

Review of the Properties of the Laser and the Spectrum of Laser Instruments for Diabetic Ulcer (당뇨병성 궤양에 사용되는 레이저의 특성에 대한 연구)

  • Kang, Ki-wan;Kang, Ja-yeon;Jeong, Min-jeong;Kim, Hong-jun;Seo, Hyung-sik;Jang, In-soo
    • The Journal of Korean Medicine Ophthalmology and Otolaryngology and Dermatology
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    • v.29 no.4
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    • pp.14-23
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    • 2016
  • Objectives : One of major complications of diabetes, diabetic ulcer is also one of the main reasons for amputation, and the prevalence rate is 4-10%. Laser therapy is widely used for leg ulcer and diabetic ulcer, and it is known to improve wound epithelialization, cellular content, and collagen deposition. The purpose of this study is to investigate the properties of the laser and the spectrum of laser instruments for diabetic ulcer. Methods : We performed literature search using the PubMed, Cochrane, CINAHL and Web of science for the data in English. In addition, other databases were checked for different languages such as OASIS and NDSL for the literature in Korean, CNKI in Chinese, and CiNii and J-STAGE written in Japanese. We excluded all review article and experimental studies, and only clinical studies using laser or light emitting diode (LED) for diabetic ulcer were selected. Results : A total twenty papers were selected. Different light sources were used as follows: LED, HeNe, InGaAlP, GaAlAs, GaAs, CO2, and KTP. The number of LED studies was 9, and HeNe laser was 7, and InGaAlP and GaAlAs laser was 2, GaAs, CO2, and KTP laser was 1 for each. Various energy density of the clinical study were reported. Conclusions : It is suggested that to select appropriate laser type and give the adequate output power to treat diabetic ulcer. Further evaluation and research for the condition of laser therapy to treat diabetic ulcers are warranted.

The Properties of Photoinduced Birefringence in Chalcogenide Thin Films by the Electric Field Effects (전계효과에 의한 칼코게나이드 박막에서의 광유기 복굴절 특성)

  • 장선주;박종화;여철호;정홍배
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.1
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    • pp.58-63
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    • 2001
  • We have investigated the photoinduced birefrinence by the electric field effects in chalcogenide thin films. The electric field effects have investigated the various applied bias voltages(forward and reverse) in chalcogenide thin films. A pumping (inducing) and a probing bean were using a linearly polarized He-Ne laser light (633nm) and semiconductor laser light (780nm), respectively. The result was shown that the birefringence had a higher value in DC +2V than the others, Also, we obtained the birefringence in the electric field effects by various voltages. In addition, we have discussed the anisotropy property of chalcogenide thin films by the electric field effects.

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