• Title/Summary/Keyword: and Capping effect

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Induction of Single Helical Screw Sense in Poly (n-Hexyl Isocyanate) by End-capping with a Chiral Moiety

  • Nath G. Yogendra;Samal Shashadhar;Park, Sang-Yoon;Murthy C.N.;Lee, Jae-Suk
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.334-334
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    • 2006
  • Helical polymers like polyisocyanates with single screw sense are essential to exhibit sophisticated functions like molecular recognition, self-replication, chirality memory and catalytic activity. One approach that has not been explored is the effect on handedness of the polyisocyanates through end-capping with a chiral residue. Induction of chirality in poly(n-hexyl isocyanate) was studied by end-capping with chiral (R and S) 2-bromo-3-methylbutyryl chloride(R-BMBC and S-BMBC). We have shown that a control over living anionic polymerization of HIC by using a suitable initiator affords an opportunity to introduce chiral end-groups with 100% yield and in high purity. This has resulted in helicity induction through extended lengths several orders of magnitude.

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Correlation between optimized thicknesses of capping layer and thin metal electrode for efficient top-emitting blue organic light-emitting diodes

  • Hyunsu Cho;Chul Woong Joo;Byoung-Hwa Kwon;Chan-mo Kang;Sukyung Choi;Jin Wook Sin
    • ETRI Journal
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    • v.45 no.6
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    • pp.1056-1064
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    • 2023
  • The optical properties of the materials composing organic light-emitting diodes (OLEDs) are considered when designing the optical structure of OLEDs. Optical design is related to the optical properties, such as the efficiency, emission spectra, and color coordinates of OLED devices because of the microcavity effect in top-emitting OLEDs. In this study, the properties of top-emitting blue OLEDs were optimized by adjusting the thicknesses of the thin metal layer and capping layer (CPL). Deep blue emission was achieved in an OLED structure with a second cavity length, even when the transmittance of the thin metal layer was high. The thin metal film thickness ranges applicable to OLEDs with a second microcavity structure are wide. Instead, the thickness of the thin metal layer determines the optimized thickness of the CPL for high efficiency. A thinner metal layer means that higher efficiency can be obtained in OLED devices with a second microcavity structure. In addition, OLEDs with a thinner metal layer showed less color change as a function of the viewing angle.

Characteristics of Gate Oxides with Cobalt Silicide Process (복합 코발트 실리사이드 공정에 따른 게이트 산화막의 특성변화)

  • Song, Oh-sung;Cheong, Seong-hwee;Yi, Sang-don;Lee, Ki-yung;Ryu, Ji-ho
    • Korean Journal of Materials Research
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    • v.13 no.11
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    • pp.711-716
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    • 2003
  • Gate length, height, and silicide thickness have all been shrinking linearly as device density has progressively increased over the years. We investigated the effect of the cobalt diffusion during the silicide formation process on the 60$\AA$-thick gate oxide lying underneath the Ti/Co and Co/Ti bilayers. We prepared four different cobalt silicides, which have similar sheet resistance, made from the film structure of Co/Ti(interlayer), and Ti(capping layer)/Co, and peformed the current-voltage, time-to-break down, and capacitance-voltage measurements. Our result revealed that the cobalt silicide process without the Ti capping layer allowed cobalt atoms to diffuse into the upper interface of gate oxides. We propose that 100$\AA$-thick titanium interlayer may lessen the diffusion of cobalt to gate oxides in 1500-$\AA$ height polysilicon gates.

An Investigation of Welding Variables on Resistance Upset Welding for End Capping of HWR Fuel Elements (중수로 핵연료 봉단마개의 저항업셋 용접을 위한 용접변수)

  • 이정원;박춘호;고진현;정성훈;정문규
    • Journal of Welding and Joining
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    • v.7 no.2
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    • pp.60-69
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    • 1989
  • The present study was aimed at investigating the effect of welding parameters such as welding current, electrode force(or squeeze force) and parts cleaning on the sound weld, and establishing the most reliable weld conditions for HWP(Heavy Water Reactor) fuel end capping with the resistance upset butt welding. Major results obtained are as follows. 1. The amount of sound weld was increased with increasing weld current(5.0-11KA) because the activated diffusion with increasing heat generation played an important role in eliminating the porosity and weld line in the weld interface. 2. It was found that weld current was not significantly influenced by the electrode force although the increase of it caused a slight increase of weld current and upset deformation. 3. Acetone rinsing before drying for the Zircaloy-4 end cap cleaning produced the reliable sound weld because it would remove the remaining solvent and surface films, and provided the uniform contact between the end cap and the tube. 4. The optimum welding conditions for fuel end capping by a resistance upset hytt welding are obtained as follows. weld current: 10-11KA, electrode force: 62-90KPa parts cleaning: vapor degreasing.rarw.water, acetone rinsing.rarw.drying.

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Effect of $Al_2O_3$ capping layer on properties of MgO protection layer for plasma display panel

  • Eun, Jae-Hwan;Lee, Jung-Heon;Kim, Soo-Gil;Kim, Hyeong-Joon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.628-631
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    • 2002
  • $Al_2O_3$ capping layer and MgO protective layer were deposited by electron beam evaporation method using single crystal source. Thickness of the capping layer, $Al_2O_3$, was varied from 5 nm to 10 nm. Surface morphology was observed by SEM and AFM before and after hydration. And microstructure of deposited $Al_2O_3$ layer and chemical shift of electron binding energy were also observed by high resolution TEM and XPS, respectively, after hydration. From these results, it was found that Mg atoms diffused into $Al_2O_3$ layer, reacted with moisture and formed $Mg(OH)_2$ during hydration. As thickness of $Al_2O_3$ increased, extent of hydration increased. $Al_2O_3$ capped MgO thin films and uncapped MgO thin films were deposited on AC-PDP test panel to characterize discharge properties. Although $Al_2O_3$ has poor discharge properties rather than MgO, because of many hydrated species on the surface of MgO, similar discharge properties were observed.

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Long-Term Effect of Consolidation on Contaminant Transport (압밀이 오염물질 이동에 미치는 장기적 영향)

  • Lee, Jang-Guen;Kim, Do-Yoon;Park, Jae-Woo
    • Journal of the Korean Geotechnical Society
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    • v.27 no.1
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    • pp.35-40
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    • 2011
  • Dredging and disposal is a conventional method to remove contaminated sediments. However, there are some problems in dredging and disposal, such as disturbance of contaminated sediments, disposal site determination, and high construction cost. Recently, in-situ capping which overcomes the problems of dredging and disposal is widely applied to isolate local contaminated sites. Numerical studies, which have been conducted to simulate contaminant transport during in-situ capping, have been concerned mainly with diffusive transport. However, contaminated sediments experience large strain consolidation induced by self-weight because of initially high moisture content of sediments, and contaminant transport results from advection and diffusion. Previous studies focus on contaminant transport during consolidation, but have neglected consolidation effect on long-term contaminant transport in sediments. This study presents numerical simulation results of consolidation effect on long-term contaminant transport in sediments.

The dependence of NiSi for CMOS Technology on Surface Damage (CMOS 소자를 위한 NiSi의 surface damage 의존성)

  • Ji, Hee-Hwan;Bae, Mi-Suk;Lee, Hun-Jin;Oh, Soon-Young;Yun, Jang-Gn;Park, Sung-Hyung;Wang, Jin-Suk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.167-170
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    • 2002
  • The influence of Si surface damage on Ni-silicide with TiN Capping layer and the effect of $H_2$ anneal are characterized. Si surface is intentionally damaged using Ar Sputtering. The sheet resistance of NiSi formed on damaged silicon increased rapidly as Ar sputtering time increased. However, the thermal stability of Ni-Si on the damage silicon was more stable than that on at undamaged Si, which means that damaged region retards the formation of NiSi. It was shown that $H_2$ anneal and TiN capping is highly effective in reducing NiSi sheet resistance.

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