• Journal of Environmental Health Sciences
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• v.36 no.1
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• pp.20-26
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• 2010

Temperature change has been shown to affect daily mortality even though different analytical methods produce different results. The effect of air pollution on the relationship between the temperature and the mortality is not large, although differences exist between temperature models. The aim of this study was to examine how the temperature change affected the daily mortality in Seoul by comparing the results from the temperature model using two study periods: one from 1994 to 2007 and the other from 1997 to 2007. Generally mean temperature, minimum temperature and Q10 temperature was derived as an optimal model, even though there are differences between age and cause of death. The analysis of threshold using total mortalities in all ages from 1994 to 2007 and from 1997 to 2007 showed that the number of the deaths increased 7.02% (95% CI: 6.06~7.98) and 2.51% (95% CI: 1.83~3.19), respectively as the mean temperature increased $1^{\circ}C$ from a threshold temperature of $27.5^{\circ}C$ and $25.7^{\circ}C$ respectively. These results indicated that the temperature has less effect on the number of death than does an extreme heat wave period.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.4
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• pp.217-222
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• 2003

A new two-dimensional analytical model for the potential distribution and drain-induced barrier lowering (DIBL) effect of fully depleted short-channel Silicon-on-insulator (SOI)-MESFET's has been presented in this paper. The two dimensional potential distribution functions in the active layer of the device is approximated as a simple parabolic function and the two-dimensional Poisson's equation has been solved with suitable boundary conditions to obtain the bottom potential at the Si/oxide layer interface. It is observed that for the SOI-MESFET's, as the gate-length is decreased below a certain limit, the bottom potential is increased and thus the channel barrier between the drain and source is reduced. The similar effect may also be observed by increasing the drain-source voltage if the device is operated in the near threshold or sub-threshold region. This is an electrostatic effect known as the drain-induced barrier lowering (DIBL) in the short-gate SOI-MESFET's. The model has been verified by comparing the results with that of the simulated one obtained by solving the 2-D Poisson's equation numerically by using the pde toolbox of the widely used software MATLAB.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.2
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• pp.8-13
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• 1999

In this paper, an analytical threshold voltage model is proposed by replacing the conventional GCA(Gradual Channel Approximation) with the assumption that a normal depletion layer width in the intrinsic region will vary quasi-linearly according to the channel direction. Derived threshold voltage expression is written as a function of the effective channel length, drain voltage, substrate bias voltage, substrate doping concentration, and the oxide thickness. Calculated results show almost similar trends with BSIM3v3's results in a satisfactory accuracy.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.845-847
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• 2012

In this paper, the transport characteristics for doping concentration in the channel has been analyzed for DGMOSFET. The Possion equation is used to analytical. The DGMOSFET is extensively been studying because of advantages to be able to reduce the short channel effects(SCEs) to occur in conventional MOSFET. Since SCEs have been occurred in subthreshold region including threshold region, the analysis of transport characteristics in subthreshold region is very important. The threshold voltage roll-off and DIBL have been with various of doping concentration for DGMOSFET in this study.

• Progress in Superconductivity and Cryogenics
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• v.11 no.3
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• pp.20-25
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• 2009

The quench detection system of the KSTAR (Korea Superconducting Tokamak Advanced Research) primarily uses the resistive voltage measurement due to a quench. This method is to detect the resistive voltage generated by a quench, which is continuously maintained above the preset voltage threshold for a given holding time. As the KSTAR PF (Poloidal Field) coils are operated in the pulse current mode, the large inductive voltages are generated. Therefore the voltage threshold and the quench holding time should be determined by considering both the inductive voltages measured during the operation, and the maximum conductor temperature rise through the quench analysis. In this paper, the compensation methods for minimizing the inductive voltages are presented for the KSTAR PF coils. The quench hot spot analysis of the PF coils was carried out by the analytical and numerical methods for determining the proper values of the quench voltage threshold and the allowable quench protection delay time.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.9C
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• pp.825-830
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• 2006

Capacity-approaching codes using iterative decoding have been the main subject of research activities during past decade. Especially, LDPC codes show the best asymptotic performance and density evolution has been used as a powerful technique to analyze and design good LDPC codes. In this paper, we apply density evolution with a Gaussian approximation to the concatenated zigzag (CZZ) codes by considering both flooding and two-way schedulings. Based on this density evolution analysis, the threshold values are computed for various CZZ codes and the optimal structure of CZZ codes for various code rates are obtained. Also, simulation results are provided to conform the analytical results.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1991.10a
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• pp.205-209
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• 1991

The conventional modeling equations for planar MOSFET can not be directly used for zero or minus junction depth concave MOSFET. In this paper, we suggest a new model which can simulate the electrical characteristics of concave MOSFET. The threshold voltage modeling was achieved using the charge sharing method considering the relative difference of source and drain depletion widths. To analyze the ID-VDS characteristics, the conventional expressions for planar MOSFET were employed with the electrical channel length as an effective channel length and the channel length modulation factor as ${\alpha}$ΔL. By comparing the proposed model with experimental results, we could get reasonably similar curves and we proposed a concave MOSFET conditiion which shows no short channel effect of threshold voltage(V${\gamma}$).

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.397-407
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• 2002

A new simulator which predicts the quantum effect in NMOSFET structure is developed. Using the self-consistent method by numerical method, this simulator accurately predicts the carrier distribution due to improved calculation precision of potential in the inversion layer. However, previous simulator uses analytical potential distribution or analytic function based fitting parameter Using the developed simulator, threshold voltage increment and gate capacitance reduction due to the quantum effect are analyzed in NMOS. Especially, as oxide thickness and channel doping dependence of quantum effect is analyzed, and the property analysis for the next generation device is carried out.

• Journal of applied mathematics & informatics
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• v.39 no.1_2
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• pp.173-196
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• 2021

This paper treats a retrial queue with phase type retrial times and a threshold type-policy, where each server is subject to breakdowns and repairs. Upon a server failure, the customer whose service gets interrupted will be handed over to another available server, if any; otherwise, the customer may opt to join the retrial orbit or depart from the system according to a Bernoulli trial. We analyze such a multi-server retrial queue using the recently introduced threshold-based retrial times for orbiting customers. Applying the matrix-analytic method, we carry out the steady-state analysis and report a few illustrative numerical examples.

• Journal of Animal Science and Technology
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• v.44 no.1
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• pp.31-38
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• 2002

Interval mapping using microsatellite markers was employed to detect quantitative trait loci (QTL) in the experimental cross between Berkshire and Yorkshire pigs. In order to derive critical values (CV) for test statistics for declaring significance of QTL, permutation test (PT) of Churchill and Doerge method(1994) and the analytical method(LK) of Lander and Kruglyak(1995) were used by each trait and chromosome. 525 $F_2$ progeny phenotypes of five traits(carcass weight, loin eye area, marbling score, cholesterol content, last back fat thickness) and genotypes of 125 markers covering the genome were used. Data were analyzed by line cross regression interval mapping with an F-test every by 1cM. PT CV were based on 10,000 permutations. CV at genome-wise test were 10.5 for LK and ranged from 8.1 to 8.3 for PT, depending on the trait. CV, differed substantially between methods, led to different numbers of quantitative trait loci (QTL) to be detected. PT results in the least stringent CV compared at the same % level.