• Analytical Science and Technology
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• v.5 no.1
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• pp.57-61
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• 1992

For the neutron spectrum measurement, $^6Li$ neutron spectrometer system is installed. The characteristic of the $^6Li$ detector are investigated using a $^{137}Cs$ and $^{207}Bi$ point source, and the neutron capture peaks and the pulse height spectrum using an $^{214}Am-Be$ neutron source are measured. Furthermore, the pulse height spectrum for the irradiation time variation from the (214)^Am-Be neutron source, and for the distance variation between detector and source, and the threshold variation of discriminator are measured.

• Journal of information and communication convergence engineering
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• v.10 no.2
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• pp.200-204
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• 2012

This study has presented the analysis of breakdown voltage for a double-gate metal-oxide semiconductor field-effect transistor (MOSFET) based on the doping distribution of the Gaussian function. The double-gate MOSFET is a next generation transistor that shrinks the short channel effects of the nano-scaled CMOSFET. The degradation of breakdown voltage is a highly important short channel effect with threshold voltage roll-off and an increase in subthreshold swings. The analytical potential distribution derived from Poisson's equation and the Fulop's avalanche breakdown condition have been used to calculate the breakdown voltage of a double-gate MOSFET for the shape of the Gaussian doping distribution. This analytical potential model is in good agreement with the numerical model. Using this model, the breakdown voltage has been analyzed for channel length and doping concentration with parameters such as projected range and standard projected deviation of Gaussian function. As a result, since the breakdown voltage is greatly changed for the shape of the Gaussian function, the channel doping distribution of a double-gate MOSFET has to be carefully designed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.189-198
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• 2006

A new analytical model has been proposed for predicting the sheet carrier density of Metal insulator Semiconductor High Electron Mobility Transistor (MISHEMT). The model takes into account the non-linear relationship between sheet carrier density and quasi Fermi energy level to consider the quantum effects and to validate it from subthreshold region to high conduction region. Then model has been formulated in such a way that it is applicable to MESFET/HEMT/MISFET with few adjustable parameters. The model can also be used to evaluate the characteristics for different gate insulator geometries like T-gate etc. The model has been extended to forecast the drain current, conductance and high frequency performance. The results so obtained from the analysis show excellent agreement with previous models and simulated results that proves the validity of our model.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.120-131
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• 2007

A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.

• Journal of Communications and Networks
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• v.5 no.3
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• pp.249-257
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• 2003

Ring networks are very commonly exploited among local area and metropolitan area networks (LAN/MAN), whereas cells or small fixed-size packets are widely used in synchronized ring networks. In this paper, we present an analytical method for evaluating the delay-throughput performance of a MAC protocol with multiple self-tokens in a slotted ring network under uniform traffic. In our analysis, we introduce the stationary probability, which indicates the number of packets in a node. Also, it is assumed that each node has a sufficiently large amount of self-tokens, and a slotted ring has the symmetry. The analytical results with respect to delay-throughput performance have similar values to computer simulated ones. Furthermore, in order to achieve fair access under non-uniform traffic, we propose an adaptive MAC protocol, where the number of self-tokens in a node dynamically varies, based on the number of packets transmitted within a specified period. In the proposed protocol, when the number of packets transmitted by a node within a specified period is larger than a specified threshold, the node decreases the number of self-tokens in a per-node distributed method. That results in creating free slots in the ring, thus all nodes can obtain an equal opportunity to transmit into the ring. Performance results obtained by computer simulation show that our proposed protocol can maintain throughput fairness under non-uniform traffic.

• Geomechanics and Engineering
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• v.1 no.3
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• pp.193-204
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• 2009

A 10.4-m high highway embankment retained behind mechanically stabilized earth (MSE) walls is under construction in the northeastern part of the Indian state of Bihar. The structure is constructed with compacted, micaceous, grey, silty sand, reinforced with polyester (PET) geogrids, and faced with reinforced cement concrete fascia panels. The connections between the fascia panels and the geogrids failed on several occasions during the monsoon seasons of 2007 and 2008 following episodes of heavy rainfall, when the embankment was still under construction. However, during these incidents the MSE embankment itself remained by and large stable and the collateral damages were minimal. The observational data during these incidents presented an opportunity to develop and calibrate a simple procedure for estimating rainfall induced pore water pressure development within MSE embankments constructed with backfill materials that do not allow unimpeded seepage. A simple analytical finite element model was developed for the purpose. The modeling results were found to agree with the observational and meteorological records from the site. These results also indicated that the threshold rainwater infiltration flux needed for the development of pore water pressure within an MSE embankment is a monotonically increasing function of the hydraulic conductivity of backfill. Specifically for the MSE embankment upon which this study is based, the analytical results indicated that the instabilities could have been avoided by having in place a chimney drain immediately behind the fascia panels.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• IE interfaces
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• v.23 no.4
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• pp.357-364
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• 2010

In this study, we consider performance analysis of distance-based registration (DBR). DBR causes a mobile station (MS) to register its location when the distance between the current base station (BS) and the BS in which it last registered exceeds a distance threshold D. In general, DBR has some advantages over the other registration schemes but has a tendency to causes an MS to register more frequently than zone-based registration (ZBR) that is adopted in most of mobile communication systems. The DBR with implicit registration (DBIR) was proposed to improve the performance of DBR. In this study, we point out some problems of the previous analytical model based on continuous time Markov chain and analyze exact performance of the DBIR. We show that the DBIR always outperforms the DBR by using our exact analytical model.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.11 no.7
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• pp.3370-3392
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• 2017

Next Generation Beyond 4G/5G systems will rely on the deployment of small cells over conventional macrocells for achieving high spectral efficiency and improved coverage performance, especially for indoor and hotspot environments. In such heterogeneous networks, the expected performance gains can only be derived with the use of efficient interference coordination schemes, such as Fractional Frequency Reuse (FFR), which is very attractive for its simplicity and effectiveness. In this work, femtocells are deployed according to a spatial Poisson Point Process (PPP) over hexagonally shaped, 6-sector macro base stations (MeNBs) in an uncoordinated manner, operating in hybrid mode. A newly introduced intermediary region prevents cross-tier, cross-boundary interference and improves user equipment (UE) performance at the boundary of cell center and cell edge. With tools of stochastic geometry, an analytical framework for the signal-to-interference-plus-noise-ratio (SINR) distribution is developed to evaluate the performance of all UEs in different spatial locations, with consideration to both co-tier and cross-tier interference. Using the SINR distribution framework, average network throughput per tier is derived together with a newly proposed harmonic mean, which ensures fairness in resource allocation amongst all UEs. Finally, the FFR network parameters are optimized for maximizing average network throughput, and the harmonic mean using a fair resource assignment constraint. Numerical results verify the proposed analytical framework, and provide insights into design trade-offs between maximizing throughput and user fairness by appropriately adjusting the spatial partitioning thresholds, the spectrum allocation factor, and the femtocell density.

• ETRI Journal
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• v.34 no.6
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• pp.922-931
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• 2012

With the increasing demands for mobile wireless sensor networks in recent years, designing an energy-efficient clustering and routing protocol has become very important. This paper provides an analytical model to evaluate the power consumption of a mobile sensor node. Based on this, a clustering algorithm is designed to optimize the energy efficiency during cluster head formation. A genetic algorithm technique is employed to find the near-optimal threshold for residual energy below which a node has to give up its role of being the cluster head. This clustering algorithm along with a hybrid routing concept is applied as the near-optimal energy-efficient routing technique to increase the overall efficiency of the network. Compared to the mobile low energy adaptive clustering hierarchy protocol, the simulation studies reveal that the energy-efficient routing technique produces a longer network lifetime and achieves better energy efficiency.