• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.22-28
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• 2015

This paper proposes column-parallel three step Single Slope Analog-to-Digital Converter (SS-ADC) for high frame rate VGA CMOS Image Sensors (CISs). The proposed three step SS-ADC improves the sampling rate while maintaining the architecture of the conventional SS-ADC for high frame rate CIS. The sampling rate of the three-step ADC is increased by a factor of 39 compared with the conventional SS-ADC. The proposed three-step SS-ADC has a 12-bit resolution and 200 kS/s at 25 MHz clock frequency. The VGA CIS using three step SS-ADC has the maximum frame rate of 200 frames/s. The total power consumption is 76 mW with 3.3 V supply voltage without ramp generator buffer. A prototype chip was fabricated in a $0.13{\mu}m$ CMOS process.

• Korean Journal of Optics and Photonics
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• v.12 no.3
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• pp.184-189
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• 2001

The design of an ultra fast ellipsometer is suggested. It adopts the division-of-amplitude-photopolarimeter (DOAP) as the polarization state detector. It does not utilize any moving part such as the rotating polarizer(analyzer) or even any electronic modulation part like the piezo-electric phase modulator. Hence the time resolution of the present system is limited only by the response time of the photo-detector and electronic circuit as well as the analog-digital converter. The feasibility of the suggested ultra fast ellipsometer was tested and the response time with nano-second time resolution has been verified. Its future application to the investigation of kinetics including that of the phase-change optical recording media like GezSb2 Tes is discussed. ussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.110-119
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• 2017

This paper describes a CMOS image sensor (CIS) with dual correlated double sampling (CDS) and column-parallel analog-to-digital converter (ADC) and its measurement method using a field-programmable gate array (FPGA) integrated module. The CIS is composed of a $320{\times}240$ pixel array with $3.2{\mu}m{\times}3.2{\mu}m$ pixels and column-parallel 10-bit single-slope ADCs. It is fabricated in a $0.11-{\mu}m$ CIS process, and consumes 49.2 mW from 1.5 V and 3.3 V power supplies while operating at 6.25 MHz. The measured dynamic range is 53.72 dB, and the total and column fixed pattern noise in a dark condition are 0.10% and 0.029%. The maximum integral nonlinearity and the differential nonlinearity of the ADC are +1.15 / -1.74 LSB and +0.63 / -0.56 LSB, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.25-33
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• 2007

In this paper, a fourth-order single-bit delta-sigma modulator is presented and implemented. The loop-filter is composed of both feedback and feedforward paths. Measurement results show that maximum 99dB dynamic range is achievable at a clock rate of 3.2MHz for 20kHz baseband. The proposed modulator has been fabricated in a $0.18{\mu}m$ standard CMOS process.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.142-147
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• 2012

This paper presents a mixed-mode CMOS duty-cycle corrector (DCC) circuit that has a dynamic frequency scaling (DFS) counter and coarse and fine tuning adjustments. A higher duty-cycle correction accuracy and smaller jitter have been achieved by utilizing the DFS counter that reduces the bit-switching glitch effect of a digital to analog converter (DAC). The proposed circuit has been designed using a 0.18-${\mu}m$ CMOS process. The measured duty cycle error is less than ${\pm}1.1%$ for a wide input duty-cycle range of 25-75% over a wide freqeuncy range of 0.5-1.5 GHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.436-439
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• 2011

본 논문은 클록 보정회로를 가진 1V 2.56-GS/s 6-bit flash analog-to-digital converter (ADC) 제안한다. 제안하는 ADC 구조에서 아날로그 블록은 단일 T/H와 2단의 프리앰프, 그리고 비교기를 사용된다. 2단의 프리앰프와 비교기의 출력에 옵셋의 크기를 줄이기 위하여 저항 평균화 기법을 적용하였다. 디지털 블록은 quasi-gray rom base 구조를 사용한다. 3입력 voting 회로로 flash ADC에서 발생하기 쉬운 bubble error를 제거하였으며, 고속 동작을 위해 단일 클록을 사용하는 TSPC F/F로 구현한다. 제안하는 flash ADC는 클록 듀티 비를 조절할 수 있는 클록 보정회로를 사용한다. 클록 보정 회로는 비교기 클록 듀티 비를 조절하여 리셋 시간과 evaluation 시간의 비율을 최적화함으로 dynamic 특성을 확보한다. 제안한 flash ADC는 1V 90nm의 CMOS 공정에서 설계되었다. Full power bandwidth인 1.2 GHz 입력에 대하여 ADC 성능을 시뮬레이션을 통해 확인하였다. 설계된 flash ADC의 면적과 전력소모는 각각 $800{\times}400\;{\mu}m^2$와 193.02mW 이다.

• Journal of Sensor Science and Technology
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• v.30 no.1
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• pp.61-65
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• 2021

In this study, we propose a 2500 frame per second (fps) high-speed binary complementary metal oxide semiconductor (CMOS) image sensor using a gate/body-tied (GBT) p-channel metal oxide semiconductor field effect transistor-type high-speed photodetector. The GBT photodetector generates a photocurrent that is several hundred times larger than that of a conventional N+/P-substrate photodetector. By implementing an additional binary operation for the GBT photodetector with such high-sensitivity characteristics, a high-speed operation of approximately 2500 fps was confirmed through the output image. The circuit for binary operation was designed with a comparator and 1-bit memory. Therefore, the proposed binary CMOS image sensor does not require an additional analog-to-digital converter (ADC). The proposed 2500 fps high-speed operation binary CMOS image sensor was fabricated and measured using standard CMOS process.

• Proceedings of the Korea Information Processing Society Conference
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• 2021.05a
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• pp.86-89
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• 2021

최근 에너지 하베스팅 기술이 발전하여 배터리 교체가 어려운 환경에서 동작하는 엣지 장치들에 많이 적용되고 있다. 하지만 해당 기술이 적용된 에너지 하베스팅 장치는 간헐적으로 동작하는 문제를 가진다. 이를 해결하기 위해 에너지 체커로 실시간 에너지 상태를 파악하고 에너지 상태에 따라 프로그램을 제어하는 JIT (Just-In-Time) 기반 모델이 많이 연구되고 있다. JIT 기반 모델에서 에너지 체커는 필수적이지만 상당한 에너지 오버헤드를 가지고 있다. 그렇기 때문에 본 논문에서는 에너지 체커의 에너지 오버헤드를 최소화하기 위해 저전력 에너지 체커 구현에 대한 실험을 진행했다. 내부 ADC (Analog-to-Digital Converter) 기반 에너지 체커, 내부 비교기 기반 에너지 체커, 그리고 외부 비교기 기반 에너지 체커 등 다양한 에너지 체커를 구현했고 각 에너지 체커에 대한 에너지 오버헤드를 측정 및 비교했다. 그 결과, 저전력 외부 비교기를 사용한 외부 비교기 기반 에너지 체커가 가장 작은 에너지 오버헤드를 가지는 것을 확인했다. 또한, ADC 의 측정 주기를 최적화하여 ADC 기반 에너지 체커의 에너지 오버헤드를 더욱 줄일 수 있는 가능성도 확인했다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.1-9
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• 2009

In this paper, a small area 12-bit 300MSPS CMOS Digital-to-Analog Converter(DAC) is proposed for display systems. The architecture of the DAC is based on a current steering 6+6 segmented type, which reduces non-linearity error and other secondary effects. In order to improve the linearity and glitch noise, an analog current cell using monitoring bias circuit is designed. For the purpose of reducing chip area and power dissipation, furthermore, a noble self-clocked switching logic is proposed. To verify the performance, it is fabricated with $0.13{\mu}m$ thick-gate 1-poly 6-metal N-well Samsung CMOS technology. The effective chip area is $0.26mm^2$ ($510{\mu}m{\times}510{\mu}m$) with 100mW power consumption. The measured INL (Integrated Non Linearity) and DNL (Differential Non Linearity) are within ${\pm}3LSB$ and ${\pm}1LSB$, respectively. The measured SFDR is about 70dB, when the input frequency is 15MHz at 300MHz clock frequency.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.11
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• pp.48-55
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• 2016

Ambient-light sensor system, which changes the brightness of a display as ambient light change, was studied to reduce the power consumption of the mobile applications such as note PC, tablet PC and smart phone. The ambient-light sensor system should be integrated on a display panel to improve the complexity and cost of mobile applications, so the ambient-light sensor and readout circuit was integrated on a display panel using low-temperature poly-silicon thin film transistors (LTPS-TFT). We proposed the new compensation method to correct the panel-to-panel variation of the ambient-light sensors, without additional equipment. We designed and investigated the new readout circuit with the proposed compensation method and the analog-to-digital converter for the final digital output of ambient light. The readout circuit has very simple structure and control timing to be integrated with LTPS-TFT, and the input luminance ranges from 10 to 10,000 lux. The readout rate is 100 Hz, and maximum differential non-uniformity with 20 levels of the final output below 0.5 LSB.