• Applied Microscopy
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• v.30 no.4
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• pp.337-345
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• 2000

Introduction of the buffer layer and the nitridation of a sapphire substrate were one of the most general methods employed for the reduction of lattice defects in GaN thin films Brown on sapphire by MOCVD. In an effort to improve the initial nucleation and growth condition of the GaN, reactive ion beam (RIB) of nitrogen treatment of the sapphire surface has been attempted. The 10 nm thick, amorphous $AlO_xN_y$ layer was formed by RIB and was partially crystallized alter the main growth of GaN at high temperature, leaving isolated amorphous regions at the interface. The beneficial effect of amorphous layer at interface in relieving the thermal stress between substrate and GaN film was examined by measuring the lattice strain value of the GaN film grown with and without the RIB treatment. Higher order Laue zone pattern (HOLZ) of $[\bar{2}201]$ zone axis was compared with simulated patterns and lattice strain was estimated It was confirmed that the great reduction of thermal strain was achieved by RIB process and the amount of thermal stress was 6 times higher in the GaN film grown by conventional method without the RIB treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• Journal of Conservation Science
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• v.37 no.6
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• pp.648-658
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• 2021

In this study, we aimed to analyze the chemical changes that occur in Korean paper in an accelerated deterioration environment of 105℃. We selected the Korean paper produced with different types of cooking agents (plant lye, Na₂CO₃) and during different manufacturing seasons (winter, summer). The degree of deterioration of the Korean paper was confirmed by measuring the brightness, yellowness, and pH level, and the degree of change in each vibrational region of cellulose as deterioration progressed through infrared (FT-IR) spectroscopy. The FT-IR analysis showed that, as deterioration progressed, the absorbance of the amorphous region in cellulose decreased, whereas the absorbance of the crystalline region slightly increased. X-Ray diffraction (XRD) analysis and Raman spectroscopy were performed to verify the changes in the crystalline and amorphous regions in cellulose indicated by the FT-IR results. Furthermore, the crystallinity index (CI) was calculated; it showed a slight increase after deterioration; therefore, CI was confirmed to follow the same trend as that observed for absorbance in the FT-IR results. In addition, as a result of Raman spectroscopic analysis, the degree of decomposition of the amorphous region in the cellulose under the manufacturing conditions was confirmed by the fluorescence measured after the deterioration.

• Journal of the Korean Society of Food Science and Nutrition
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• v.34 no.1
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• pp.87-92
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• 2005

This study was investigated to examine gelatinization properties of waxy black rice starches. X-ray diffraction patterns in raw starches showed traditional A type of cereals. The crystalline regions of both black rice and Shinsunchalbyeo starches disappeared when temperature increased to $65^{\circ}C$ where the crystalline regions of two starches changed to amorphous ones. Scanning Electron Microscope showed that granule type of Shinsunchalbyeo starch was more collapsed compared to that of black rice starch heated at 6$0^{\circ}C$. Gelatinization in both samples completed when samples were heated at 63$^{\circ}C$. The results by Differential Scanning Calorimetry (DSC) revealed that gelatinization patterns were similar in both samples. In Rapid Visco Analyzer examination, there was no difference in peak viscosity, breakdown, final viscosity and setback between Shinsunchalbyeo and waxy black rice starches.

• Macromolecular Research
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• v.12 no.2
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• pp.172-177
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• 2004

We have studied the lamella-level morphology of poly(ethylene terephthalate) (PET)/polycarbonate (PC) blends using small-angle X-ray scattering (SAXS). Measurements were made as a function of the holding time in the melt. We determined the morphological parameters at the lamellar level by correlation function analysis of the SAXS data. An increased amorphous layer thickness was identified in the blend, indicating that some PC was incorporated into the interlamellar regions of PET during crystallization. The blend also exhibits a larger lamella crystalline thickness (l$\sub$c/) than that of pure PET. A possible reason for the increase in l$\sub$c/ is that the inclusion of the PC molecules in the interlamellar regions causes an increase in the surface free energy of folding. At the early stage of isothermal crystallization, we observed a rapid drop in the value of l$\sub$c/ in the blend; this finding indicates that a relatively large fraction of secondary crystals form during the primary crystallization. In contrast, the value of l$\sub$c/ for the sample that underwent a prolonged holding time increased with time in the secondary crystallization-dominant regime; this observation suggests that the disruption of chain periodicity, which results from transesterification between the two polymers, favors the development of fringed micellar crystals that have larger values of l$\sub$c/ rather than the development of normal chain-folded crystals.

• Proceedings of the Korean Geotechical Society Conference
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• 1991.10a
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• pp.87-102
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• 1991

It has been reported that the failure of Carsington Dam in Eng1and occured due to the existence of a thin yellow clay layer which was not identified during the design work, and due to pre-existing shears of the clay layer. The slope stability analyses during the design work, which utilized traditional circular arc type failure method and neglected the existence of the clay layer, showed a safety factor of 1.4. However, the post-failure analyses which utilized translational failure mode considering the clay layer and the pre-existing shear deformation revealed the reduction of safety factor to unity. The post-failure analysis assumed 10。 inclination of the horizontal forces onto each slice based on the results of finite element analyses. In this paper, Bishop's simplified method, Janbu method, and Morgenstern-Price method were used for the comparison of both circular and translational failure analysis methods. The effects of the pre-existing shears and subsquent movement were also considered by varying the soil strength parameters and the pore pressure ratio according to the given soi1 parameters. The results showed factor of safefy 1.387 by Bishop's simplified method(STABL) which assumed circular arc failure surface and disregarding yellow clay layer and pre-failure material properties. Also the results showed factor of safety 1.093 by Janbu method(STABL) and 0.969 by Morgenstern-Price method(MALE) which assumed wedge failure surface and considerd yellow clay layer using post failure material properties. In addition, dam behavior was simulated by Cam-Clay model FEM program. The effects of pore pressure changes with loading and consolidation, and strength reduction near or at failure were also considered based on properly assumed stress-strain relationship and pore pressure characteristics. The results showed that the failure was initiated at the yellow clay layer and propagated through other zones by showing that stress and displacement were concentrated at the yel1ow clay layer.

• Journal of Astronomy and Space Sciences
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• v.28 no.4
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• pp.253-260
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• 2011

To reproduce the multiple broad peaks and the fine spectral features in the spectral energy distributions (SEDs) of T Tauri stars, we model dust around T Tauri stars using a radiative transfer model for multiple isothermal circumstellar dust shells. We calculate the radiative transfer model SEDs for multiple dust shells using the opacity functions for various dust grains at different temperatures. For six sample stars, we compare the model results with the observed SEDs including the Spitzer spectral data. We present model parameters for the best fit model SEDs that would be helpful to understand the overall structure of dust envelopes around classical T Tauri stars. We find that at least three separate dust components are required to reproduce the observed SEDs. For all the sample stars, an innermost hot (250-550 K) dust component of amorphous (silicate and carbon) and crystalline (corundum for all objects and forsterite for some objects) grains is needed. Crystalline forsterite grains can reproduce many fine spectral features of the sample stars. We find that crystalline forsterite grains exist in cold regions (80-100 K) as well as in hot inner shells.

• Journal of Sericultural and Entomological Science
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• v.39 no.2
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• pp.186-196
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• 1997

The IR crystallinity index of Calcium nitrate treated silk fiber decreased proportionally to the concentration of calcium nitrate. A partial change of conformation was observed in the concentration of over 46.4-47.6% changing from $\beta$-sheet or to random coil in the crystalline region. This is in coincidence with the result of crystallinity index, which was started to be reduced in the concentration range of 46.4-47.6%. A same trend was observed for the X-ray order factor, birefringence, degree of orientation and surface structure. These structural parameters were remarkably changed on the treatment of silk fibers with concentration of 46.4-17, 6% calcium nitrate. Therefore, it seems that there exists a critical concentration of calcium nitrate in affection the structure and morphology of silk fibers. According to the examination of surface morphology, the fine stripe was observed in the direction of fiber axis at 46.4% concentration. However, the treated concentration was exceeded by 47.6%, the cracks were appeared severely on the fiber surface in the transverse direction as well as fiber axis direction. This result might be related to the tensile properties, specially a tenacity of silk fibers. As a result of quantitative analysis of a dilute acid hydrolysis, three different regions, which are known as a amorphous, semi-crystalline and crystalline region, could be obtained. The hydrolysis rate curves were different with various concentrations of treatment and the relative contents of each region could be calculated.

• Korean Journal of Materials Research
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• v.28 no.10
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• pp.595-600
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• 2018

This study investigates the microstructural properties of CoCrFeMnNi high entropy alloy (HEA) oxynitride thin film. The HEA oxynitride thin film is grown by the magnetron sputtering method using nitrogen and oxygen gases. The grown CoCrFeMnNi HEA film shows a microstructure with nanocrystalline regions of 5~20 nm in the amorphous region, which is confirmed by high-resolution transmission electron microscopy (HR-TEM). From the TEM electron diffraction pattern analysis crystal structure is determined to be a face centered cubic (FCC) structure with a lattice constant of 0.491 nm, which is larger than that of CoCrFeMnNi HEA. The HEA oxynitride film shows a single phase in which constituting elements are distributed homogeneously as confirmed by element mapping using a Cs-corrected scanning TEM (STEM). Mechanical properties of the CoCrFeMnNi HEA oxynitride thin film are addressed by a nano indentation method, and a hardness of 8.13 GPa and a Young's modulus of 157.3 GPa are obtained. The observed high hardness value is thought to be the result of hardening due to the nanocrystalline microstructure.