• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.339-341
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• 2007

Soft ferromagnetic materials are very useful for many sensors using magnetic materials with high permeability, low coercivity and low hysteresis loss. Among them, FeCoSiBNi amorphous magnetic films show us a good impedance change(about 3.05%/Oe, at 12MHz) by the exterior magnetic field in this experiment. These are produced by rapid solidification from the melt and the material is ejected in a jet from a nozzle and quenched in a stream of liquid. After that, we make them a shape of wire with different sizes of width. Thus, we can find that the impedance change (122.16%, at 12MHz) is occurred and the fabricated magnetic wire has the characteristics of good sensor element.

• Proceedings of the Korean Magnestics Society Conference
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• 2006.11a
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• pp.38-38
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• 2006

• Journal of the Korean Magnetics Society
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• v.2 no.1
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• pp.29-36
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• 1992

The fundamental research about the amorphous ferrite, which is expected as the important material for electronic and information imdustry in future, was carried out in this work. Because the ferromagnetic amorphous ferrites reported recently are very inferior in magnetic properties than the crystalline ferrites, the development of the more ferromagnetic amorphous ferrites is required. In order to obtain the fundamental data for the preparation of amorphous ferrites, the hand-made twin-roller quenching apparatus was used for rapid quenching. Investigation on amorphous ferrite in the system $CaO-Bi_{2}O_{3}-Fe_{2}O_{3}$ has been carried out in the composition of 10-50 mole% CaO, 10-50 mole% $Bi_{2}O_{3}$, 40-70 mole% $Fe_{2}O_{3}$. Large magnetization values were obtained near the composition of the mixture of $BiFeO_{3}$ and $CaFe_{4}O_{7}$. Especially, an amorphous ${(CaO)}_{20}{(Bi_{2}O_{3})_{15}{(Fe_{2}O_{3})}_{65}$ specimen has a magmetization value of about 21.84 emu/g at 0K(10 kOe). Fe $M\"{o}ssbauer$ absorption spectrum indicates that this specimen is compsed of two amorphous phases, antiferromagnetic phase($\alpha$-phase) and ferromagnetic phase($\beta$-phase). Crystallization of this amorphous ferrite was happened in steps-$550^{\circ}C$ and $775^{\circ}C$, then observed crystal phases were perovskite phase of $BiFeO_{3}$ and $Fe_{2}O_{3}$ phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta$$\theta$$_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 2000e. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.t also seed layer.r.

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.217-217
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• 2005

• Journal of the Korean Magnetics Society
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• v.23 no.4
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• pp.122-125
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• 2013

Perpendicular magnetic anisotropy (PMA) is the phenomenon of magnetic thin film which is preferentially magnetized in a direction perpendicular to the film's plane. Amorphous multilayer with PMA has been studied as the good candidate to realization of high density STT-MRAM (Spin Transfer Torque-Magnetic Random Access Memory). The current issue of high density STT-MRAM is a decrease in the switching current of the device and an application of amorphous materials which are most suitable devices. The amorphous ferromagnetic material has low saturated magnetization, low coercivity and high thermal stability. In this study, we presented amorphous ferromagnetic multilayer that consists of an amorphous alloy CoSiB and a nonmagnetic material Pd. We investigated the change of PMA of the $[CoSiB\;t_{CoSiB}/Pd\;1.3nm]_5$ multilayer ($t_{CoSiB}$ = 0.1, 0.2, 0.3, 0.4, 0.5, 0.6 nm, and $t_{Pd}$ = 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6 nm) and $[CoSiB\;0.3nm/Pd\;1.3nm]_n$ multilayer (n = 3, 5, 7, 9, 11, 13). This multilayer is measured by VSM (Vibrating Sample Magnetometer) and analyzed magnetic properties like a coercivity ($H_c$) and a magnetization ($M_s$). The coercivity in the $[CoSiB\;t_{CoSiB}\;nm/Pd\;1.3nm]_5$ multi-layers increased with increasing $t_{CoSiB}$ to reach a maximum at $t_{CoSiB}$ = 0.3 nm and then decreased for $t_{CoSiB}$ > 0.3 nm. The lowest saturated magnetization of $0.26emu/cm^3$ was obtained in the $[CoSiB\;0.3nm/Pd\;1.3nm]_3$ multilayer whereas the highest coercivity of 0.26 kOe was obtained in the $[CoSiB\;0.3nm/Pd\;1.3nm]_5$ mutilayer. Additional Pd layers did not contribute to the perpendicular magnetic anisotropy. The single domain structure evolved in to a striped multi-domain structure as the bilayer repetition number n was increased above 7 after which (n > 7) the hysteresis loops had a bow-tie shapes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta\theta_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 200Oe. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.

• Journal of the Korean Magnetics Society
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• v.26 no.3
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• pp.76-80
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• 2016

CoSiB is the amorphous ferromagnetic material and multilayer consisting of CoSiB and Pd has perpendicular magnetic anisotropic property. PMA has strong advantages for STT-MRAM. Moreover, amorphous materials have two advantages more than crystalline materials: no grain boundary and good thermal stability. Therefore, we studied the magnetic properties of multilayers consisting of the $Co_{75}Si_{15}B_{10}$ with PMA. In this study, we investigated the magnetic property of the [CoSiB (3, 4, 5, and 6) ${\AA}$/Pd(11, 13, 15, 17, 19,and $24{\AA})]_5$ multilayers and found the annealing temperature dependence of the magnetic property. The annealing temperature range is from room temperature to $500^{\circ}C$. The coercivity and the saturation magnetization of the CoSiB/Pd multilayer system have a close association with the annealing temperature. Moreover, the coercivity especially shows a sudden increasing at the specific annealing temperature.

• Journal of the Mineralogical Society of Korea
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• v.15 no.3
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• pp.231-240
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• 2002

Microbial metal reduction influences the biogeochemical cycles of carbon and metals as well as plays an important role in the bioremediation of metals, radionuclides, and organic contaminants. The use of bacteria to facilitate the production of magnetite nanoparticles and the formation of carbonate minerals may provide new biotechnological processes for material synthesis and carbon sequestration. Metal-reducing bacteria were isolated from a variety of extreme environments, such as deep terrestrial subsurface, deep marine sediments, water near Hydrothemal vents, and alkaline ponds. Metal-reducing bacteria isolated from diverse extreme environments were able to reduce Fe(III), Mn(IV), Cr(VI), Co(III), and U(VI) using short chain fatty acids and/or hydrogen as the electron donors. These bacteria exhibited diverse mineral precipitation capabilities including the formation of magnetite ($Fe_3$$O_4$), siderite ($FeCO_3$), calcite ($CaCO_3$), rhodochrosite ($MnCO_3$), vivianite [$Fe_3$($PO_4$)$_2$ .$8H_2$O], and uraninite ($UO_2$). Geochemical and environmental factors such as atmospheres, chemical milieu, and species of bacteria affected the extent of Fe(III)-reduction as well as the mineralogy and morphology of the crystalline iron mineral phases. Thermophilic bacteria use amorphous Fe(III)-oxyhydroxide plus metals (Co, Cr, Ni) as an electron acceptor and organic carbon as an electron donor to synthesize metal-substituted magnetite. Metal reducing bacteria were capable of $CO_2$conversion Into sparingly soluble carbonate minerals, such as siderite and calcite using amorphous Fe(III)-oxyhydroxide or metal-rich fly ash. These results indicate that microbial Fe(III)-reduction may not only play important roles in iron and carbon biogeochemistry in natural environments, but also be potentially useful f3r the synthesis of submicron-sized ferromagnetic materials.