• 제목/요약/키워드: amorphous Al2O3

검색결과 238건 처리시간 0.023초

Synthesis of Cubic Boron Nitride by Al-Mg Solvents

  • Park, Jong-Ku;Park, S.T.;S.K. Singhal;S. J. Cui;K. Y. Eun
    • The Korean Journal of Ceramics
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    • 제3권3호
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    • pp.187-190
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    • 1997
  • The aluminum-magnesium (Al-Mg) aklloys have been proved to be an effective solvent for synthesis of cubic-phase boron nitride (cBN) from hexagonal-phase boron nitride (hBN) at the conditions of high pressures and high temperatures (HP/HT). Various kinds of hBN powders having different crystallinity have been tested for cBN synthesis with Al-Mg solvents. The conversion ratio from hBN to cBN and the shape of synthesized cBN crystals appeared to be affected strongly by chemical composition and added amount of Al-Mg solvents as well as crystallinity of BN powders. As the magnesium content increased in the Al-Mg solvents, the conversion ratio increased and the size of cBN crystals became larger. The crystal facets developed well in the specimens with solvents having high Mg content. It was observed that a hBNlongrightarrowcBN transformation occurred more easily in the specimens having well crystallized hBN powders. Amorphous BN having much $B_2O_3$ impurity exhibited a low threshold temperature for transformation to cBN, which was attributed to crystallization of amorphous BN to well crystallized hBN prior to transformation into cBN with help of $B_2O_3$.

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Characteristics of HfO2-Al2O3 Gate insulator films for thin Film Transistors by Pulsed Laser Deposition

  • Hwang, Jae Won;Song, Sang Woo;Jo, Mansik;Han, Kwang-hee;Kim, Dong woo;Moon, Byung Moo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.304.2-304.2
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    • 2016
  • Hafnium oxide-aluminum oxide (HfO2-Al2O3) dielectric films have been fabricated by Pulsed Laser Deposition (PLD), and their properties are studied in comparison with HfO2 films. As a gate dielectric of the TFT, in spite of its high dielectric constant, HfO2 has a small energy band gap and microcrystalline structure with rough surface characteristics. When fabricated by the device, it has the drawback of generating a high leakage current. In this study, the HfAlO films was obtained by Pulsed Laser Deposition with HfO2-Al2O3 target(chemical composition of (HfO2)86wt%(Al2O3)14wt%). The characteristics of the thin Film have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The X-ray diffraction studies confirmed that the HfAlO has amorphous structure. The RMS value can be compared to the surface roughness via AFM analysis, it showed HfAlO thin Film has more lower properties than HfO2. The energy band gap (Eg) deduced by spectroscopic ellipsometer was increased. HfAlO films was expected to improved the interface quality between channel and gate insulator. Apply to an oxide thin Film Transistors, HfAlO may help improve the properties of device.

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고분자 P123와 란탄이 도핑된 알루미나의 특성 연구 (Characterization of Alumina Doped with Lanthanum and Pluronic P123 via Sol-Gel Process)

  • 정미원;이미회
    • 한국세라믹학회지
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    • 제45권5호
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    • pp.297-302
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    • 2008
  • To direct the evolution of nanostructure and immobilize ${\gamma}-Al_2O_3$ catalyst, nanocrystalline La-doped-$Al_2O_3$ powder were prepared by the sol-gel process with addition of an amphiphilic block copolymer template (pluronic P123: $(poly(ethyleneoxide)_{20}-poly(propyleneoxide)_{70}-poly(ethyleneoxide)_{20})$. The dried gel is amorphous, whereas heating at temperature above $700^{\circ}C$ leads to the formation of nanocrystalline ${\gamma}$ and ${\delta}-Al_2O_3$ and these two phases is kept until $1100^{\circ}C$. ${\alpha}-A1_2O_3 $starts to form at $1200^{\circ}C$ with $LaAl_{11}O_{18}$. The surface morphology and crystal structure has been observed by field emission scanning electron microscope (FE-SEM) and X-ray diffraction (XRD). Solid state $^{27}Al$ MAS NMR indicates two types of local environment, i.e. octahedral and tetrahedral sites. The surface area and pore size was compared among these powders using the BET nitrogen adsorption measurements.

Al2O3 Coating and Filling of Carbon Nanotubes

  • Lee Jong-Soo;Min Byung-Don;Kim Sang-Sig
    • Transactions on Electrical and Electronic Materials
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    • 제4권4호
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    • pp.1-6
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    • 2003
  • Aluminum oxide ($Al_2O_3$) nanotubes and nanorods were fabricated by coating and filling of multiwalled carbon nanotubes (MWNTs) with atomic-layer deposition (ALD). $Al_2O_3$ material was deposited on the MWNTs at a substrate temperature of $300^{\circ}C$ using trimethylaluminum and distilled water. Transmission electron microscopy, high resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, and selected area electron diffraction of the deposited MWNTs revealed that amorphous $Al_2O_3$ material coats the MWNTs conformally and that this material fills the inside of the MWNTs. These illustrate that ALD has an excellent capability to coat and fill any three-dimensional shapes of MWNTs conformally without producing any crystallites.

Gas Barrier Properties of Nanolaminated Single Inorganic Film Deposited by Neutral Beam Assisted Sputtering Process

  • Jang, Yun-Sung;Lee, You-Jong;Hong, Mun-Pyo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.465-465
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    • 2012
  • In this study, we developed an Al2O3 nanolaminated single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nanocrystal phase with various grain sizes and lead to the formation of a nanolaminated structure in the single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the nanolaminated Al2O3 thin films by NBAS process have improved more than 40% compared with that of conventional Al2O3 layers by the RF magnetron sputtering process under the same sputtering conditions.

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침전법으로 제조한 Alumina 분말의 특성(II) : 열처리에 따른 Alumina 분말의 특성 (Properties of Alumina Powder Prepared by Precipitation Method(II) : Properties of Alumina Powder on Heat-Treatment)

  • 홍기곤;이홍림
    • 한국세라믹학회지
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    • 제25권3호
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    • pp.193-200
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    • 1988
  • 침전법에 의해서 pH가 7, 9, 10, 11인 조건에서 생성된 알루미늄 수산화물을 출발물질로 하여 열처리에 따른 알루미나 분말의 특성을 연구하였다. $600^{\circ}C$에서 2시간 동안 열처리하였을 때 비정질 알루미늄 수산화물의 결정수가 탈수된 후에 생성된 최초의 상은 비정질 알루미나의 비표면적은 감소하였다. 비정질 알루미늄 수산화물을 제외한 나머지 알루미늄 수산화물로부터 결정수의 탈수는 비표면적을 증가시켰으며 AlOOH 형태의 수산화물의 존재비가 클수록 전이 알루미나 존재영역까지는 비표면적이 더 크게 나타났다. $\alpha-Al_2O_3$로의 전이속도는 동일온도에서 pH=7 > pH=10 > pH=9 > pH=11의 순서로 일어났으며, 생성된 $\alpha-Al_2O_3$ 분말의 morphology는 알루미늄 수산화물의 외형을 남긴 형골입자(skeleton particle였다. 또한, 열처리 온도의 증가와 $\alpha-Al_2O_3$로의 전이가 일어남에 따라 비표면적의 감소와 더불어 입자성장이 일어나다.

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Nano-Granular Co-Fe-AI-O Soft Ferromagnetic Thin Films for GHz Magnetic Device Applications

  • Sohn, Jae-Cheon;Byun, Dong-Jin
    • 한국세라믹학회지
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    • 제43권3호
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    • pp.143-147
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    • 2006
  • Co-Fe-Al-O nanogranular thin films were fabricated by RF-magnetron sputtering under an $Ar+O_2$ atmosphere. High resolution transmission electron microscopy revealed that the Co-Fe-Al-O films are composed of bcc (Co, Fe) nanograins finer than 5 nm and an Al-O amorphous phase. A very large electrical resistivity of $374{\mu}{\Omega}cm$ was obtained, together with a large uniaxial anisotropy field of 50 Oe, a hard axis coercivity of 1.25 Oe, and a saturation magnetization of 12.9 kG. The actual part of the relative permeability was measured to be 260 at low frequencies and this value was maintained up to 1.3 GHz. The ferromagnetic resonance frequency was 2.24 GHz. The resulting Co-Fe-Al-O nanogranular thin films with a high electrical resistivity and high resonance frequency are considered to be suitable for GHz magnetic device applications.

나노 MgO-CaO-Al2O3-SiO2 glass 첨가제를 가진 AlN의 소결거동 및 열전도도 (Sintering Behavior and Thermal Conductivity of Aluminum Nitride Ceramics with MgO-CaO-Al2O3-SiO2 Nano-glass Additive)

  • 백수현;김경민;류성수
    • 한국분말재료학회지
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    • 제25권5호
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    • pp.426-434
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    • 2018
  • In this study, $MgO-CaO-Al_2O_3-SiO_2$ (MCAS) nanocomposite glass powder having a mean particle size of 50 nm and a specific surface area of $40m^2/g$ is used as a sintering additive for AlN ceramics. Densification behaviors and thermal properties of AlN with 5 wt% MCAS nano-glass additive are investigated. Dilatometric analysis and isothermal sintering of AlN-5wt% MCAS compact demonstrates that the shrinkage of the AlN specimen increases significantly above $1,300^{\circ}C$ via liquid phase sintering of MCAS additive, and complete densification could be achieved after sintering at $1,600^{\circ}C$, which is a reduction in sintering temperature by $200^{\circ}C$ compared to conventional $AlN-Y_2O_3$ systems. The MCAS glass phase is satisfactorily distributed between AlN particles after sintering at $1,600^{\circ}C$, existing as an amorphous secondary phase. The AlN specimen attained a thermal conductivity of $82.6W/m{\cdot}K$ at $1,600^{\circ}C$.

원자층 증착법에 의한 TiO2, Al2O3, 및 TiO2-Al2O3 나노라미네이트 박막이 316L Stainless Steel의 부식특성에 미치는 영향 (Corrosion Properties of Atomic Layer Deposited TiO2, Al2O3 and TiO2-Al2O3 Nanolaminated Film Coated 316L Stainless Steel)

  • 이우재;만지흠;김다영;장경수;최현진;최우창;권세훈
    • 한국표면공학회지
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    • 제50권1호
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    • pp.35-41
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    • 2017
  • $TiO_2$, $Al_2O_3$, and $TiO_2-Al_2O_3$ nanolaminated films were grown by atomic layer deposition (ALD) on the 316L stainless steel (SS316L) substrates at a temperature of $150^{\circ}C$. The growth kinetics of $ALD-TiO_2$ and $Al_2O_3$ thin films were systematically investigated in order to precisely control the thickness of each layers in the $TiO_2-Al_2O_3$ nanolaminated films using a high-resolution transmission electron microscopy. And, the exact deposition rates of $ALD-TiO_2$ on $Al_2O_3$ surface and $ALD-Al_2O_3$ on $TiO_2$ surface were revealed to be 0.0284 nm/cycle and 0.11 nm/cycle, respectively. At given growth conditions, the microstructures of $TiO_2$, $Al_2O_3$ and $TiO_2-Al_2O_3$ nanolaminated films were amorphous. The potentiodynamic polarization test revealed that the $TiO_2-Al_2O_3$ nanolaminated film coated SS316L had a best corrosion resistance, although all ALDcoated SS316L exhibited a clear improvement of the corrosion resistance compared with a bare SS316L.

암모늄 알루미늄 탄산염(hhCH)의 열분해에 의한 α-알루미나 나노분말 제조 (Fabrication of α-Alumina Nanopowders by Thermal Decomposition of Ammonium Aluminum Carbonate Hydroxide (AACH))

  • 오용택;신동찬;김상우
    • 한국세라믹학회지
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    • 제43권4호
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    • pp.242-246
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    • 2006
  • [ ${\alpha}-Al_2O_3$ ] nanopowders were fabricated by the thermal decomposition and synthetic of Ammonium Aluminum Carbonate Hydroxide (AACH). Crystallite size of 5 to 8 nm were fabricated when reaction temperature of AACH was low, $8^{\circ}C$, and the highest $[NH_4{^+}][AlO(OH)_n{(SO_4){^-}}_{3-n/2}][HCO_3]$ ionic concentration to pH of the Ammonium Hydrogen Carbonate (AHC) aqueous solution was 10. The phase transformation fem $NH_4Al(SO_4)_2$, rhombohedral $(Al_2(SO_4)_3)$, amorphous-, ${\theta}-,\;{\alpha}-Al_2O_3$ was examined at each temperature according to the AACH. A Time-Temperature-Transformation (TTT) diagram for thermal decomposition in air was determined. Homogeneous, spherical nanopowders with a particle size of 70 nm were obtained by firing the 5 to 8 m crystallites, which had been synthesized from AACH at pH 10 and $8^{\circ}C,\;at\;1150^{\circ}C$ for 3 h in air.