• Journal of Korean Vacuum Science & Technology
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• v.4 no.3
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• pp.86-90
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• 2000

ZnO : Al films were prepared through the optimization process of aluminum content and substrate temperature in rf-magnetron sputtering. When hydrogenation was performed on these films using a hot filament method, all films showed improvement in conductivity although more conductive film showed less improvement. When the substrate temperature ($T_H$) was varied from $25^{\circ}C\;to\;300^{\circ}C$ during hydrogenation, the resistivity was reduced more at higher $T_H$ (more than 30% at $T_H=300^{\circ}C$) Thus, two methods were developed to suppress the dehydrogenation in ZnO : Al films : (1) capping with amorphous silicon thin film as a diffusion barrier, and (2) cooling during hydrogenation.

• Current Photovoltaic Research
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• v.1 no.2
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• pp.103-108
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• 2013

Epitaxial growth of a high-quality thin Si film is essential for the application to low-cost thin-film Si solar cells. A polycrystalline Si film was grown on a $SiO_2$ substrate at $450^{\circ}C$ by a Al-assisted crystal growth process. For the purpose, a thin Al layer was deposited on the $SiO_2$ substrate for Al-assisted crystal growth. However, the epitaxial growth of Si film resulted in a rough surface with humps. Then, we introduced a thin amorphous Si seed layer on the Al film to minimize the initial roughness of Si film. With the help of the Si seed layer, the surface of the epitaxial Si film was smooth and the crystallinity of the Si film was much improved. The grain size of the $1.5-{\mu}m$-thick Si film was as large as 1 mm. The Al content in the Si film was 3.7% and the hole concentration was estimated to be $3{\times}10^{17}/cm^3$, which was one order of magnitude higher than desirable value for Si base layer. The results suggest that Al-doped Si layer could be use as a seed layer for additional epitaxial growth of intrinsic or boron-doped Si layer because the Al-doped Si layer has large grains.

• Journal of the Korean Ceramic Society
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• v.23 no.6
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• pp.1-6
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• 1986

The hydration of $C_3A$ and $C_3A-CaSO_4$.$2H_2O$ was investigated with varying concentration (0.1-1.0%) of sodium gluconate solution. gluconate solution. Sodium gluconate accelerates cation dissolution from $C_3A$ for the first several minutes but depresses the rate of heat evolution in the course of $C_3A$ hydration. The hydration of $C_3A$ in the presence of sodium gluconate was modified such that the formation of the intermediate hydrate C4AH$\chi$ crystal was much reduced and most of the product became amorphous. The retardation of $C_3A-CaSO_4$.$2H_2O$ hydration in the presence of sodium gluconate was controlled by the competitive adsorption between gluconate anion and $SO_4^{-2}$ onto $C_3A$ surface.

• The Korean Journal of Ceramics
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• v.4 no.4
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• pp.323-330
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• 1998

Mixed oxide compounds of potential usefulness for fibre coatings (hexagonal celsian, $BaAl_2Si_2O_8$ and lanthanum hexaluminate, $LaAl_{11}O_{18}$) or for matrix materials (yttrium aluminium garnet, $Y_3Al_5O_{12}$) were prepared by hybrid sol-gel synthesis and their thermal crystallisation was monitored by thermal analysis, X-ray diffraction and multinuclear solid state MAS NMR. All the gels convert to the crystalline phase below about $12200^{\circ}C$, via amorphous intermediates in which the Al shows and NMR resonance at 36-38 ppm sometimes ascribed to Al in 5-fold coordination. Additional information about the structural changes during thermal treatment was provided by $^{29}Si$, $^{137}Ba$ and $^{89}Y$ MAS NMR spectroscopy, showing that the feldspar framework of celsian begins to be established by about $500^{\circ}C$ but the Ba is still moving into its polyhedral lattice sites about $400^{\circ}C$ after the sluggish onset of crystallization. Lanthanum hexaluminate and YAG crystallise sharply at 1230 and $930^{\circ}C$ respectively, the former via $\gamma-Al_2O_3$, the latter via $YAlO_3$. Yttrium moves into the garnet lattice sites less than $100^{\circ}C$ after crystallisation.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.191-198
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• 2000

A serpentine mineral was treated in hydrochloric acid solution to obtain amorphous silica residue with high surface area. The highly porous silica with aluminum hydroxide and sodium hydroxide was hydrothermally reacted in an autoclave. A numerous experiments were performed in terms of reaction time, temperature, alkalinity, and calcinations temperature. As a result, a ZSM-5 zeolite of the highest crystallinity was produced under such conditions as $^170{\circ}C$ of the reaction temperature, 24 hours of the reaction time, and $11.7Na_2O{\cdot}Al_2O_3{\cdot}90SiO_2{\cdot}3510H_2O{\cdot}10.8(TPA)_2O$ the composition along with 3 hours of the calcinations at $600^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.772-775
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• 2003

The development of new improved type of dielectric materials on the conception of multiphase structure has been carried out in this paper. Metal alkoxides solutions were used for application of thin film by electrophoretic deposition technique. We succeeded in preparation of amorphous and composite dielectric films from Al alkoxides. Specific features of the preparation technique were considered. Microstructure of the films was examined as well as their dielectric properties. TEM analyses reveals that films deposited from aging sols and heat-treated at temperatures as low as $400^{\circ}C$ contain small whiskers of ${\delta}-Al_2O_3$.

• Journal of the Korean institute of surface engineering
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• v.29 no.3
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• pp.186-194
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• 1996

In this study, ceramic film was coated by a sol-gel process for increasing the adhesion strength between the substrate and copper layer. TEOS and ATSB were used as starting solution of metallic alkoxide. As a result, amorphous-like diffraction pattern after heat treatment at $1200^{\circ}C$ was obtained using X-ray diffractometer. The more contants of $Al_2O_3$ gave rise to the futher advanced cracks. A maximum adhesion strength of 250gf was measured under the condition of 30 Wt.% $Al_2O_3$, which is 5 times greater than that of uncoated one of the ceramic film.

• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.237-244
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• 2005

We prepared the cylindrical $\gamma-alumina$ pellets of 5 mm in diameter and 10 mm in average length using amorphous alumina and pore generating agent. The pellets were immersed in an aqueous solution of the mixture of $Fe(NO_{3})_{3}{\cdot}9H_{2}O$ and $CH_{3}COOH$. They were then hydrothermally treated at $200^{\circ}C$ for 3 h in autoclave, dried and calcined. For the application as an environmental catalyst, we investigated the decomposition characteristics of aniline and the initiation characteristics of $OH^{\cdot}$ conversion action in $O_{3}$ environment with or without the $Fe_{2}O_{3}$ supported y-alumina catalyst and $O_{3}$ molecule.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.97.2-97.2
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• 2018

This study formed a hard TiAlSiWN coating layer using Ti, Al, Si and W raw powders that were mechanically alloyed and refined. The TiAlSi and TiAlSiW coating targets were fabricated using a single PCAS process in a short time with the optimal sintering conditions. The coating targets were deposited on the WC substrate by forming coating layers using TiAlSiN and TiAlSiWN nitride nano-composite structures with an AIP process. The properties of the nitride nano-composite coating layers were compared according to the addition of W. The microstructure of the nitride nano-composite coating layer was analyzed, focusing on the distribution of the crystalline phases, amorphous phases ($Si_3N_4$), and growth orientation of the columnar crystal depending on the addition of W. The mechanical properties of the coating layers were exhibited a hardness of approximately $3,000kg/mm^2$ and adhesion of about 117.77N in the TiAlSiN. In particular, the TiAlSiWN showed excellent properties with a hardness of more than $4,300kg/mm^2$ and an adhesion of about 181.47N.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.