• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.9
• /
• pp.1386-1392
• /
• 1990

Characteristics of the direct thermal nitrided films by RF induction heating has been studied. The nitrided films on Si were prepared at 1000-1200\ulcorner in ammonia gas ambient. The nitrided films were analyzed by ellipsometry an Auger electron spectroscopy. I-V and C-V characteristics of MIS capacitors fabricated using nitrided film were investicated. The nitrided films were grown up mostly within initial thirty minutes and no significant growth was observed thereafter. Etch rates of films were about 1\ulcornermin in diluted HF (HF:H2O= 1:50). The nitrided films were resistant to dry and wet oxidations at temperatures below 1000\ulcorner and 900\ulcorner, respectively.

• Transactions on Electrical and Electronic Materials
• /
• v.7 no.3
• /
• pp.118-122
• /
• 2006

Diamond-like carbon (DLC) films were prepared on silicon substrates by the RF PECVD (Plasma Enhanced Chemical Vapor Deposition) method using methane $(CH_4)$ and hydrogen $(H_2)$ gas. We examined the effects of the post annealing temperature on the tribological properties of the DLC films using friction force microscopy (FFM). The films were annealed at various temperatures ranging from 300 to $900^{\circ}C$ in steps of $200^{\circ}C$ using RTA equipment in nitrogen ambient. The thickness of the film was observed by scanning electron microscopy (SEM) and surface profile analysis. The surface morphology and surface energy of the films were examined using atomic force microscopy and contact angle measurement, respectively. The hardness of the DLC film was measured as a function of the post annealing temperature using a nano-indenter. The tribological characteristics were investigated by atomic force microscopy in FFM mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.68-69
• /
• 2007

We have prepared p-type ZnO:Al films in pure oxygen ambient on n-type Si (100) and homo buffer layers by RF magnetron sputtering system. Hall effect measurement shows that the film annealed at $600^{\circ}C$ possesses p-type conductivity and the film annealed $800^{\circ}C$ does not. PL spectra show different properties of p- and n-type ZnO film. The corresponding peaks of PL spectra of p- and n-type show at about same positions. The intensities of high photon energy of n-type film on buffer shows decreasing tendency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.3
• /
• pp.201-206
• /
• 2019

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

• Journal of the Korean Ceramic Society
• /
• v.48 no.4
• /
• pp.316-322
• /
• 2011

Tin oxide thin films were deposited by rf reactive sputtering and annealed at $400^{\circ}C$ for 1 h in vacuum. To minimize the influence such as reduction, oxidation, and doping on tin oxide thin films during annealing, a vacuum ambient annealing was adopted. The structural, optical, and electrical properties of tin oxide thin films were characterized by X-ray diffraction, atomic force microscope, UV-Vis spectrometer, and Hall effect measurements. After vacuum annealing, the grain size of all thin films was slightly increased and the roughness ($R_a$) was improved, however irregular and coalesced shapes were observed from the most of the films. These irregular and coalesced crystal shapes and the possible elimination of intrinsic defects might have caused a decrease in both carrier concentration and mobility, which degrades electrical conductivity.

• Journal of Communications and Networks
• /
• v.18 no.3
• /
• pp.340-350
• /
• 2016

The performance of large-scale cognitive radio (CR) networks with secondary users sustained by opportunistically harvesting radio-frequency (RF) energy from nearby primary transmissions is investigated. Using an advanced RF energy harvester, a secondary user is assumed to be able to collect ambient primary RF energy as long as it lies inside the harvesting zone of an active primary transmitter (PT). A variable power (VP) transmission mode is proposed, and an energy-based opportunistic spectrum access (OSA) strategy is considered, under which a secondary transmitter (ST) is allowed to transmit only if its harvested energy is larger than a predefined transmission threshold and it is outside the guard zones of all active PTs. The transmission probability of the STs is derived. The outage probabilities and the throughputs of the primary and the secondary networks, respectively, are characterized. Compared with prior work, the throughput can be increased by as much as 29%. The energy-based OSA strategy can be generally applied to a non-CR setup, where distributed power beacons (PBs) are deployed to power coexisting wireless signal transmitters (WSTs) in a wireless powered sensor network.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.9
• /
• pp.863-867
• /
• 2008

In this paper, to increase the light current efficiency of photodiode, we fabricated aluminum-doped zinc oxide(AZO) thin films by RF magnetron sputtering. AZO thin films were deposited at low temperature of 100 $^{\circ}C$ and different RF powers of 50, 100, 150 and 200 W due to selective process technology. Then the AZO thin films were annealed at 400 $^{\circ}C$ for 1 hr in vacuum ambient to increase crystalline. The lowest resistivity of 1.35 ${\times}$ $10^{-3}$ ${\Omega}cm$ and a high transmittance over 90 % were obtained under the conditions of 3 mTorr, 100 'c and 150 W. The optimized AZO thin films were deposited as anti-reflection coating on PN junction of silicon photodiode. It was confirmed by the result of $V_r-I_{ph}$ curve that the efficiency of photodiode with AZO thin film was enhanced 17 % more than commercial photodiode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.144-145
• /
• 2006

ZnO is a promising material to make high efficiency violet or blue light emitting diodes (LEDs) for its large binding energy (60meV) and big bandgap. But the high quality p-type conduction of ZnO is a dilemma to achieve LEDs with it. In present study, we presented a reliable method to prepare ZnO thin films on (100)silicon substrates by RF magnetron sputtering in the mixture ambient of $N_2$ and $O_2$, accompanying with low pressure annealing in the sputtering chamber in $O_2$ at $600^{\circ}C$ and $800^{\circ}C$ respectively. X-ray diffraction and Hail effect with Van der Paul method were performed to test ZnO films. Seeback effect was also carried out to identify carrier types in ZnO films and showed the N-doped ZnO film annealed at $800^{\circ}C$ had achieved p-type conduction.

• Proceedings of the IEEK Conference
• /
• 1998.06a
• /
• pp.391-394
• /
• 1998

The effect of the heat treatment of the AZO transparent conductive film prepared by rf magnetron sputtering was investigated. The variations of the electrical and optical properties with heat treatment ambient and temperature were studied. After the heat treatment in air above 300.deg. C, the resistivity of AZO films increased by 1 to 8 orders of magnitude. However, no significant change in the AZO films after th eheat treatment in vacuum was not observed.

• Journal of Satellite, Information and Communications
• /
• v.10 no.3
• /
• pp.1-5
• /
• 2015

Recently, RF energy harvesting technology is a promising technology for small-size IoT(Internet of Things) devices such as sensor to resolve battery scarcity problem. When applied to existing cognitive radio networks, this technology can be expected to increase network throughput through the increase of cognitive user's operating time. This paper proposes a optimal channel-selection policy for RF energy harvesting CR networks model where cognitive users in harvesting zone harvest ambient RF energy from transmission by nearby active primary users and the others in non-harvesting zone choose the channel and communicate with their receiver. We consider that primary users and secondary users are distributed as Poisson point processes and contact with their intended receivers at fixed distances. Finally we can derive the optimal frame duration, transmission power and density of secondary user from the proposed model that can maximize the secondary users's throughput under the given several conditions and suggest future directions of research.