Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Increase of Photodiode Efficiency by using Transparent Conductive Aluminium-doped Zinc Oxide Thin Film

Aluminium-doped Zinc Oxide 투명전도막을 적용한 Photodiode의 수광효율 향상

  • 정윤환 (원광대학교 전기전자및정보공학부) ;
  • 김호걸 (원광대학교 전기전자및정보공학부) ;
  • 박춘배 (원광대학교 전기전자및정보공학부)
  • Published : 2008.09.01
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Abstract

In this paper, to increase the light current efficiency of photodiode, we fabricated aluminum-doped zinc oxide(AZO) thin films by RF magnetron sputtering. AZO thin films were deposited at low temperature of 100 $^{\circ}C$ and different RF powers of 50, 100, 150 and 200 W due to selective process technology. Then the AZO thin films were annealed at 400 $^{\circ}C$ for 1 hr in vacuum ambient to increase crystalline. The lowest resistivity of 1.35 ${\times}$ $10^{-3}$ ${\Omega}cm$ and a high transmittance over 90 % were obtained under the conditions of 3 mTorr, 100 'c and 150 W. The optimized AZO thin films were deposited as anti-reflection coating on PN junction of silicon photodiode. It was confirmed by the result of $V_r-I_{ph}$ curve that the efficiency of photodiode with AZO thin film was enhanced 17 % more than commercial photodiode.

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References

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