• Korean Journal of Metals and Materials
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• v.47 no.6
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• pp.344-348
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• 2009

Dense $4.25Co_{0.53}Fe_{0.47}-Al_{2}O_{3}$ composite was simultaneously synthesized and consolidated by pulsed current activated combustion method within 2 min from mechanically activated powders. Consolidation was accomplished under the combined effects of a pulsed current and mechanical pressure. Dense $4.25Co_{0.53}Fe_{0.47}-Al_{2}O_{3}$ with relative density of up to 96% was produced under simultaneous application of 80 MPa pressure and the pulsed current. Fracture toughness and hardness of the composite are $6MPa{\cdot}m^{1/2}$ and $570kg/mm^{2}$ respectively.

• Korean Journal of Metals and Materials
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• v.50 no.5
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• pp.369-374
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• 2012

Nanopowders of Mo, Ta and Si were made by high-energy ball milling. A dense nanostructured $MoSi_2-TaSi_2$ composite was sintered by the high-frequency induction heated combustion method within 2 minutes from mechanically activated powder of Mo, Ta and Si. A highly dense $MoSi_2-TaSi_2$ composite was produced under simultaneous application of a 80 MPa pressure and the induced current. Mechanical properties and microstucture were investigated. The hardness and fracture toughness of the $MoSi_2-TaSi_2$ composite were $1200kg/mm^2$ and $3.5MPa.m^{1/2}$, respectively. The mechanical properties were higher than those of monolithic $MoSi_2$.

• Korean Journal of Metals and Materials
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• v.50 no.6
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• pp.449-454
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• 2012

Nanopowder of FeAl and $Al_2O_3$ was synthesized from FeO and Al powders by high energy ball milling. Using the pulsed current activated sintering method, the nanocystalline $Al_2O_3$ reinforced FeAl composite was consolidated within two minutes from mechanically synthesized powders. The advantage of this process is that it allows very quick densification to near theoretical density and prohibits grain growth in nanostuctured materials. The grain size, sintering behavior and hardness of sintered $FeAl-Al_2O_3$ composite were investigated.

• Journal of Powder Materials
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• v.19 no.6
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• pp.451-457
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• 2012

Nowadays, research and development on quantum dot have been intensively and comprehensively pursued worldwide in proportion to concurrent breakthrough in the field of nanotechnology. At present, quantum dot technology forms the main interdisciplinary basis of energy, biological and photoelectric devices. More specifically, quantum dot semiconductor is quite noteworthy for its sub-micro size and possibility of photonic frequency modulation capability by controlling its size, which has not been possible with conventionally fabricated bulk or thin film devices. This could lead to realization of novel high performance devices. To further understand related background knowledge of semiconductor quantum dot at somewhat extensive level, a review paper is presently drafted to introduce basics of (semiconductor) quantum dot, its properties, applications, and present and future market trend and prospect.

• Journal of the Korean institute of surface engineering
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• v.38 no.5
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• pp.183-187
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• 2005

The quaternary ZrCrAIN nanocomposite thin films are synthesized by Closed-Field Unbalanced Magnetron Sputtering (CFUBMS). Microstructure and mechanical properties of ZrCrAIN nanocomposite thin films are studied. Grain refinement of ZrCrAIN nanocomposite thin film is occurred by controlling $N_{2}$ partial pressure. Maximum hardness value according to the various $N_{2}$ partial pressures is obtained at 45 GPa. It is also conformed that critical value of the grain size (d) needs to achieve the maximum hardness.

• Journal of the Korean institute of surface engineering
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• v.40 no.1
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• pp.1-5
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• 2007

Quaternary TiZrAlN nanocomposite thin films were synthesized by Closed-Field Unbalanced Magnetron Sputtering (CFUBMS), and their microstructure and mechanical characteristics were examined. The grain refinement of the TiZrAlN nanocomposite thin films was controlled by adjusting the $N_2$ partial pressure. The hardness of the film varied with the $N_2$ partial pressure and the maximum value was obtained approximately 47 GPa. It was also confirmed that there is a critical value of the grain size($d_c$) to need maximum hardness.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.599-600
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• 2006

This paper described the state of art of porous metal materials, the typical manufacturing technologies and performances of sintered metal porous materials, with emphasis on the recent research achievements of CISRI in development of porous metal materials. High performance porous metal materials, such as metallic membrane, sub-micron asymmetric composite porous metal, large dimensional and structure complicated porous metal aeration cones and tube, metallic catalytic filter elements, lotus-type porous materials, etc, have been developed. Their applications in energy industry, petrochemical industry, clean coal process and other industrial fields were introduced and discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.405-405
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• 2007

ZnO는 상온에서 3.38eV의 넓은 밴드갭을 가지는 직접천이형 반도체이며, 60meV의 큰 엑시톤 결합에너지를 가지는 UV 영역의 광소자로 응용할 수 있는 물질이다. 특히 ZnO를 이용한 LED에 대한 연구가 최근 활발히 이루어지고 있다. 그러나 n-ZnO/p-ZnO 동종접합 다이오드는 p-ZnO의 재현성이 없고, 낮은 정공농도를 보이기 때문에 n-ZnO를 기반으로 한 이종접합 다이오드의 개발이 필요하게 되었다. 특히 n-ZnO/p-Si 이종접합 다이오드는 낮은 구동전압과 제조단가가 저렴하다는 장점이 있다 또한 n-ZnO를 스퍼터링을 이용하여 증착할 경우 고온에서 성장함에도 불구하고 케리어 농도 및 이동도가 매우 낮다. 반면 MOCVD 법은 대면적 증착이 가능하고 비교적 낮은 온도에서 박막을 성장할 수 있고 전기적 특성 또한 매우 우수하다. 본 연구에서는 p-Si 기판위에 MOCVD 를 이용하여 n-ZnO를 증착하고, 이를 열처리하여 n-ZnO/p-Si 이종접합 다이오드의 특성 변화를 관찰하고자 하였다. n-ZnO/p-Si 시편을 $N_2$ 및 $O_2$ 가스 분위기에서 열처리한 후 소자의 광학적, 전기적 특성을 관찰하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.19.1-19.1
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• 2011

We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin $La_{0.75}Sr_{0.25}VO_3$ films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electron-electron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1447-1450
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• 2005

Carbon nanotube field emission display devices were fabricated using screen printing techniques. The CNT pastes are composed of organic binder, CNT, and additive materials such as glass frit, silver or ITO powders. The change in mixing ratio of various organic binders in CNT paste varied the electron emission characteristics. With increasing the contents of additive materials in CNT paste, turn-on field were increased, leading to decrease in electron emission current. The post-treatment process in this study induced the vertical alignment of carbon nanotubes on glass, resulting in the improvement of electron emission uniformity.