• 제목/요약/키워드: active beam

검색결과 469건 처리시간 0.023초

Orthodontic treatment of a transposed maxillary canine and first premolar in a young patient with Class III malocclusion

  • Gracco, Antonio;Siviero, Laura;Perri, Alessandro;Favero, Lorenzo;Stellini, Edoardo
    • 대한치과교정학회지
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    • 제45권6호
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    • pp.322-332
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    • 2015
  • A 12-year-old girl was referred to our clinic for evaluation of an unaesthetic dental appearance. All permanent teeth were erupted, while the deciduous maxillary right canine was retained. Cone-beam computed tomography revealed a complete transposition of the maxillary left canine and first premolar involving both the crowns and the roots. Initial cephalometric analysis showed a skeletal Class III pattern, with a slight maxillary retrusion and a compensated proclination of the upper incisors. The patient's teeth were considered to be in the correct position; therefore, we decided to attempt treatment by correcting the transposition and using only orthodontic compensation of the skeletal Class III malocclusion. After 25 months of active orthodontic treatment, the patient had a Class I molar and canine relationship on both sides, with ideal overbite and overjet values. Her profile was improved, her lips were competent, and cephalometric evaluation showed acceptable maxillary and mandibular incisor inclinations. The final panoramic radiograph showed that good root parallelism was achieved. Two-year follow-up intraoral photography showed stable results.

실리콘 기반의 고주파 위상 배열 시스템에 관한 연구 (Silicon Based Millimeter-Wave Phased Array System)

  • 강동우
    • 한국전자파학회논문지
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    • 제25권1호
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    • pp.130-136
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    • 2014
  • 본 논문에서는 최근 실리콘 기반의 소자를 이용하여 microwave 대역에서 millimeter wave 대역까지 동작하는 위상 배열 시스템 개발에 관한 연구를 리뷰하고자 한다. 우선 위상 배열 시스템의 중요한 부품인 위상 변위기를 CMOS 공정을 이용한 설계 방법에 대해 논의한다. 그리고 수동형 위상 변위기를 송수신 모듈에 적용하여 한 채널에서 16 채널까지 확장하여 실리콘 칩에 구현을 하였다. 35 GHz 대역에서 동작하는 4 채널 송수신 칩은 200 mW 이하의 저전력 성능을 보여주었다. 또한, 44 GHz 대역에서 16 channel로 확장하여 송신 출력과 선형성을 향상시킬 수 있었다. 능동형 위상 변위기는 Ku band 대역에서 동작하는 2-antenna 4-beam 수신기에 적용하였다. 한 칩에서 4개의 서로 다른 방향의 신호가 존재함으로 신호 간의 커플링을 최소화 하는 방법을 소개하고, 이를 측정을 통해 검증하였다.

IMAGING IN RADIATION THERAPY

  • Kim Si-Yong;Suh Tae-Suk
    • Nuclear Engineering and Technology
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    • 제38권4호
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    • pp.327-342
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    • 2006
  • Radiation therapy is an important part of cancer treatment in which cancer patients are treated using high-energy radiation such as x-rays, gamma rays, electrons, protons, and neutrons. Currently, about half of all cancer patients receive radiation treatment during their whole cancer care process. The goal of radiation therapy is to deliver the necessary radiation dose to cancer cells while minimizing dose to surrounding normal tissues. Success of radiation therapy highly relies on how accurately 1) identifies the target and 2) aim radiation beam to the target. Both tasks are strongly dependent of imaging technology and many imaging modalities have been applied for radiation therapy such as CT (Computed Tomography), MRI (Magnetic Resonant Image), and PET (Positron Emission Tomogaphy). Recently, many researchers have given significant amount of effort to develop and improve imaging techniques for radiation therapy to enhance the overall quality of patient care. For example, advances in medical imaging technology have initiated the development of the state of the art radiation therapy techniques such as intensity modulated radiation therapy (IMRT), gated radiation therapy, tomotherapy, and image guided radiation therapy (IGRT). Capability of determining the local tumor volume and location of the tumor has been significantly improved by applying single or multi-modality imaging fur static or dynamic target. The use of multi-modality imaging provides a more reliable tumor volume, eventually leading to a better definitive local control. Image registration technique is essential to fuse two different image modalities and has been In significant improvement. Imaging equipments and their common applications that are in active use and/or under development in radiation therapy are reviewed.

Developments of Fire-Resistant Wooden Structural Components and Those Applications to Mid- to High-Rise Buildings in Japan

  • Hanai, Atsunari;Nakai, Masayoshi;Matsuzaki, Hiroyuki;Ohashi, Hirokazu
    • 국제초고층학회논문집
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    • 제9권3호
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    • pp.221-233
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    • 2020
  • Based on past experiences of natural disasters and fires in Japan, it is stipulated by law that fire-resistant buildings larger than a certain size should be unique in the world. Recent interest in global environmental issues has led to the active introduction of wooden buildings also in Japan, and it is expected that wooden buildings will become larger and higher in size. This paper introduces the background of the development of fire-resistant laminated timber with a "Self-Charring-Stop layer", the contents of this development including other related developments, and the application of these technologies. In addition, towards the realization of much larger and higher buildings in the future, the current problems and issues to be solved are set and the necessity of the future technological development is described. Finally, a conceptual model of wooden high-rise building is proposed, which will be able to be constructed in 2025 by the further technological development.

광섬유를 통한 광 주파수 전송에서 광 위상 잡음의 능동 제거 (Active cancellation of phase noise induced by an optical fiber for delivery of optical frequency standard)

  • 이원규;김재완;유한영;김억봉
    • 한국광학회지
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    • 제18권1호
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    • pp.44-49
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    • 2007
  • 광섬유 망을 통해 수 kHz의 좁은 선폭을 가지는 $1.5{\mu}m$ 레이저광원을 높은 전송 안정도로 전송하였다. 525 m 길이의 단일모드 광섬유를 통과하면서 발생하는 광 위상 잡음을 능동적으로 제거하는 실험 장치를 구성하였고, 이렇게 하여 전송된 광 주파수의 전송 안정도는 1 초의 평균시간에서 $2{\times}10^{-17}$로 측정되었다. 전송된 광 주파수의 품질을 주파수 영역과 시간 영역에서 정량적으로 분석하였다.

고배율 광학현미경의 초정밀 능동 자동초점방법 (Active auto-focusing of high-magnification optical microscopes)

  • 이호재;이상윤;김승우
    • 한국광학회지
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    • 제7권2호
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    • pp.101-111
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    • 1996
  • 최근들어 반도체 산업의 자동검사장비에 고배율 광학현미경이 많이 사용되고 있다. 이러한 고배율 광학현미경에 있어서 선결과제가 물체를 광학현미경에 사용된 대물렌즈의 초점심도 내에 위치시키는 초점맞춤작업이다. 본 논문에서는 광삼각법을 기본구성으로하고 수광부에 2개의 2분할소자를 사용함으로써 물체의 표면상태에 둔감하면서 물체의 초점오차량에는 매우 민감한 초점오차신호를 만들어줄 수 있는 새로운 자동초점방법을 소개하였다. 얻어진 실험결과에 의하면 이 방법의 신호분해능은 5nm이며, 반복능은 0.5.mu.m이다.

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보의 진동제어를 위한 압전 액추에이터의 길이변화 효과 연구 (Effect of Piezoactuator Length Variation for Vibration Control of Beams)

  • 이영섭
    • 한국소음진동공학회논문집
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    • 제18권11호
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    • pp.1185-1191
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    • 2008
  • This paper presents an approach to define an optimal piezoactuator length to actively control structural vibration. The optimal ratio of the piezoactuator length against the beam length when a pair of piezoceramic actuator and accelerometer is used to suppress unwanted vibration with direct velocity feedback(DVFB) control strategy is not clearly defined so far. It is well known that DVFB control can be very useful when a pair of sensor and actuator is collocated on structures with a high gain and excellent stability. It is considered that three different collocated Pairs of piezoelectric actuators (20, 50 and 100 mm long) and accelerometers installed on three identical clamped-clamped beams($30{\times}20{\times}1mm$). The response of each sensor-actuator pair requires strictly positive real(SPR) property to apply a high feedback gain. However the length of the piezoactuator affects the SPR property of the sensor-actuator response. Intensive simulation and experiment show the effect of the actuator length variation is strongly related with the frequency range of the SPR property. Thus an optimal length ratio was suggested to obtain relevant performance with a good stability under the DVFB strategy.

RF-MBE 성장조건에 따른 InGaN 단결정 박막의 결정성 관찰 (Effect of Growth Conditions on Crystal Quality of InGaN Epitaxial Layers Grown by RF-MBE)

  • 나현석
    • 열처리공학회지
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    • 제31권5호
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    • pp.237-243
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    • 2018
  • In-rich InGaN epilayers were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). InGaN epilayers grown at various growth condition were observed by SEM, XRD, and RHEED. When plasma power of nitrogen increased from 290 to 350 W, surface morphology and crystal quality became worse according to more active nitrogen on the surface of InGaN at N-rich growth condition. As In composition was reduced from 89 to 71% by changing the incoming flux of In and Ga, surface morphology and crystal quality became worse. In addition, weak peaks of cubic InGaN phase was observed from InGaN layer with 71% In composition by XRD ${\Phi}$ scan measurement. When growth temperature decreased from 500 to $400^{\circ}C$, RHEED diffraction pattern was changed to be from streaky to spotty which means atomically rough surface, and spotty pattern showed cubic symmetry of InGaN clearly. XRD ${\Phi}$ scan measurement gave clear evidence that more cubic InGaN phase was formed at low growth temperature. All these results indicates that extremely low surface mobility of Ga adatom caused inferior crystal quality and cubic InGaN phase.

EB-PVD법과 전기화학방법으로 형성된 Zn-Cr film의 구조와 부식특성 (Corrosion Behavior and Crystal Structure of Zn-Cr Coatings by EB-PVD and Electroplating)

  • 최한철
    • 한국표면공학회지
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    • 제36권6호
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    • pp.423-429
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    • 2003
  • It has been investigated corrosion resistance and crystal structure of Zn-Cr coatings fabricated by electroplating method and electron-beam physical vapor deposition method(EB-P VD). The electroplated Zn-Cr alloy consists mainly of η'-Zn phase for the lower Cr content than 7.9 wt% Cr and ${\gamma}$'-ZnCr phase for the higher Cr content. In the Zn-Cr alloy fabricated by EB-PVD the ${\gamma}$'-ZnCr phase appeared clearly at 3 wt% Cr and it became the sole phase at 50 wt%Cr. The amount of η'-Zn phase decreased obviously with increasing Cr content when it exceeded 15 wt% Cr. The electrochemical measurement of the electroplated Zn-Cr film has shown corrosion potential of about -1000 mV. The current density of active region and the amount of dissolved Zn and Cr decreased significantly with increasing Cr content. The electrochemical characteristics of Zn-Cr alloy fabricated by EB-PVD have shown that the alloy of 50 wt% Cr had the highest corrosion potential(-500 mV) and the lowest critical passive current density than that of the electroplated.

공액성 소중합체를 이용한 유기 박막 트랜지스터 제작 및 특성에 관한 연구 (A Fabrication and Characterization of Organic Thin Film Transistor Using Conjugated Oligomers)

  • 김옥병;김덕영;김영관;손병청;김정수
    • 한국응용과학기술학회지
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    • 제16권4호
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    • pp.313-316
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    • 1999
  • Organic semiconductors based on conjugated thiophene oligomer have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, a conjugated oligomer such as ${\alpha}$-sexithiophene (${\alpha}$-6T) thin films was prepared by the Organic Molecular Beam Deposition (OMBD), and various electrode materials were also deposited by a simple vacuum evaporation, respectively. Those films were photolithographically patterned for the electrical measurements. Electrical charact-erization of the thin film transistor with various channel length were executed and the field effect mobility of these thin film transistors were also calculated by the formula using the experimental data.