• 한국세라믹학회지
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• 제42권5호
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• pp.326-332
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• 2005

Phase transformation effects on mechanical properties of $Ge_2Sb_2Te_5$, which is a promising candidate material for Phase Change Random Access Memory (PRAM), were studied. $Ge_2Sb_2Te_5$ thin films, which was thermally annealed with different conditions, were analyzed using XRD, AFM, 4-point probe method and reflectance measurement. As the temperature and the dwelling time increased, crystallity and grain size increased, which enhanced elastic modulus and hardness. Furthermore, N2 doping, which was used for better electrical properties, was proved to decrease elastic modulus and hardness of $Ge_2Sb_2Te_5$.

• 말소리와 음성과학
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• 제1권1호
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• pp.77-86
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• 2009

This study observes how the combined intervention program effects on the acquisition reading pronunciation of Korean phonological process words and the acquisition aspects of each phonological process rules to four Korean learners whose first language is Chinese. The training program is the combination of multisensory Auditory, Visual and Kinethetic (AVK) approach, wholistic approach, and metalinguistic approach. The training purpose is to evaluate how accurately they read the words of the phonological process which have fortisization, nasalization, lateralization, intermediate sound /ㅅ/ (/${\int}iot"$/). We access how they read the untrained words which include the four factors above. The intervention effects are analyzed by the multiple probe across subjects design. The results indicate that the combined phonological process rule explanation and the words activity intervention affects the four Chinese subjects in every type of word. The implications of the study are these: First, it suggests the effect of Korean pronunciation intervention in a concrete way. Second, it offers how to evaluate the phonological process and how to train people who are learning Korean language.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.2064-2067
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• 2000

In our country, most region is composed of mountains and people have recently been displeased with the construction of the substations in their vicinity so the substations newly built are mainly constructed with GIS system in the small area that has high soil resistivity near mountain. Therefore, nowadays the design of substation grounding system has been difficult, and the additional considerations are needed. UC substation was also difficult to design the grounding system because of so small substation area and high soil resistivity. This paper shows the examples of reducing the grounding system resistance reasonably by using several ways. Designing the ground grid electrode in the access road, deep electric earth probe, changing the substation soil with the law level resistivity soil. This report deals with the computer simulation of the grounding system resistance about the ways illustrated above.

• 한국정밀공학회지
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• 제10권3호
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• pp.117-124
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• 1993

This paper presents the study on the magnetic field analysis of magnetid deflection yoke using integral equation method. An integral equation method is developed for the computer modeling of the magnetic fields produced by color CRT and T.V. deflection yoke. Deflection of electron beams using magnetic fields is applied in a variety of display instruments such as te.evision receivers, electron probe instruments, etc. The magnetic field is solved by dividing these into the finite elements in the whole domain : the saddle coil which deflects the electron heam horizontally, the toroidal coil which deflects it vertically, magnetic core which enhances the magnetid fields genterated by the both coils. Using oblate spheroidal coordinates, this paper has had an easier access to the shape of magnetic deflection yoke chasing the boundaries than other coordinates.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.70-70
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• 2009

Si 도핑한 $Ge_2Sb_2Te_5$ 박막은 비정질상에서의 열적 안정성증가, fcc에서 hex상으로의 상전이 억제, 활성화 에너지 증가 등의 특성을 보인다. 본 연구에서는 Si 도핑에 의한 $Ge_2Sb_2Te_5$ 박막의 전기적 그리고 구조적인 특성에 관한 실험을 진행하였다. 실험에 사용된 Si 도핑 $Ge_2Sb_2Te_5$ 박막은 Si 기판 위에 radio frequency power supply를 사용해 Si과 $Ge_2Sb_2Te_5$ 타겟을 co-sputtering하여 증착하였다. Si의 sputtering 파워를 달리하여 실리콘의 농도를 다르게 증착 하였고 X-ray photoelectron spectroscopy (XPS)를 사용하여 박막의 Si 농도를 측정하였다. 증착된 박막은 질소 분위기 하에서 $5\;^{\circ}C$/min으로 열처리 하여 여러 온도와 Si 농도에서의 박막의 특성을 측정하였다. 열처리 전, 후의 박막은 X-ray diffraction (XRD) 분석을 통하여 각각의 온도에서의 구조적 특성을 분석하였다. 열처리 온도에 따르는 필름의 전기적 특성 파악을 위해서 four-point probe를 이용하여 박막의 면저항을 측정하였고 그 값은 3 회 이상 측정하여 평균값을 사용하였다. Nano-pulse scanner를 사용하여 다양한 파워범위와 펄스폭 범위에서의 박막의 상변화에 따른 반사도 차이를 측정하여 각 조성에서의 비정질-결정질상 변화속도를 분석하였다.

• 한국통신학회논문지
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• 제30권10B호
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• pp.630-638
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• 2005

네트워크 및 종단 노드의 시스템에 걸친 제한된 자원을 활용하여 실현되는 영상/음성 전달 서비스를 위한 멀티미디어 응용 프로그램의 품질을 보장하기 위해서는 지연, 지터, 손실과 같은 전송 상태와 CPU, 메모리의 사용량과 같은 시스템의 상태를 동시에 관찰하는 것이 필요하다. 본 논문에서는 액세스그리드 (Access Grid) 경우와 같이 IP 멀티캐스트 상에 동작하는 RTP/RTCP에 기반한 실시간 미디어 응용 프로그램을 대상으로 동적/정적 모니터링 방식을 혼용하여 멀티캐스트 상태와 시스템 상태를 측정하는 혼성 모니터링 방식을 제안한다. 또한 종단간 전송 품질이 저하된 경우 제안한 모니터링 방식에서 측정된 결과를 비교/분석하여 품질 저하의 원인을 판단하고 원인에 적합한 대응방안을 연계하고i라 한다. 이 결과를 바탕으로 네트워크/시스템의 상태 변화에 적응적인 영상/음성 전송 서비스의 가능성을 타진하고 종단간 전송 품질 저하 방지를 위한 효과를 예상한다.

• 한국의학물리학회지:의학물리
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• 제3권2호
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• pp.43-57
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• 1992

위상감지법(phase detector technique)은 세포의 막 캐패시턴스(membrane capacitance)를 실시간적으로 측정할 수 있는 유일한 방법이나 측정이 행해지는 동안 세포의 상태가 끊임없이 변화하기 때문에 피할 수 없는 측정오차가 존재한다. 본 연구는 이 오차의 근원을 분석하여 위상감지법의 실용한계를 규정하고자 하였다. 이론적 분석에 기초하여 다음과 같은 사실을 밝힐 수 있었다. 1) access conductance와 membrane conductance의 변화에 기인하는 측정오차를 줄이기 위해서는 초기 위상치를 올바로 선택하여야 한다. 2) 이 때 세포를 여기시키기 위해 인가하는 전압의 주파수를 알맞게 선택하여야 한다. 3) 그러나 초기 위상치가 정해진 이후의 위상 변화는 막 캐패시턴스의 측정에 큰 영향을 미치지 않는다. 4) 초기 위상을 적절히 선택하였다 하더라도 세포외 분비시 막 캐패시턴스가 크게 증가하는 경우에는 비례상수에 오차가 발생한다. 이 때 발생하는 오차는 측정기간 동안 비례상수를 되풀이하여(iteration) 보정함으로써 방지할 수 있다. 이상의 결과는 향후 위상감지법을 사용할 때 유용한 설용한계를 제공하리라 생각된다.

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.199-205
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• 2010

The crystallization speed (v) of amorphous (InTe)$_x$(GeTe) (x = 0.1, 0.3 and 0.5) films and their thermal, optical and electrical behaviors have been investigated using nano-pulse scanner (wavelength = 658 nm, laser beam diameter < 2 ${\mu}m$), X-ray diffraction (XRD), 4-point probe and UV-vis-IR spectrophotometer. These results were compared with those of $Ge_2Sb_2Te_5$ (GST) film, comprehensively utilized for phase-change random access memory (PRAM). Both v-value and thermal stability of (InTe)$_{0.1}$(GeTe) and (InTe)$_{0.3}$(GeTe) films could be enhanced in comparison with those of the GST. Contrarily, the v-value in the (InTe)$_{0.5}$(GeTe) film was so drastically deteriorated that we could not quantitatively evaluate it. This deterioration is thought because amorphous (InTe)$_{0.5}$(GeTe) film has relatively high reflectance, resulting in too low absorption to cause the crystallization. Conclusively, it could be thought that a proper compositional (InTe)$_x$(GeTe) films (e.g., x < 0.3) may be good candidates with both high crystallization speed and thermal stability for PRAM application.

• 한국시뮬레이션학회논문지
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• 제9권4호
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• pp.51-58
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• 2000

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. The novel junction process scheme in sub-micron DRAM cell with STI(Shallow Trench Isolation) has been investigated to improve the tail component in the retention time distribution which is of great importance in DRAM characteristics. In this' paper, we propose the new implantation scheme by gate-related ion beam shadowing effect and buffer-enhanced ${\Delta}Rp$ (projected standard deviation) increase using buffered N-implantation with tilt and 4X(4 times)-rotation that is designed on the basis of the local-field-enhancement model of the tail component. We report an excellent tail improvement of the retention time distribution attributed to the reduction of electric field across the cell junction due to the redistribution of N-concentration which is Intentionally caused by ion Beam Shadowing and Buffering Effect using tilt implantation with 4X-rotation. And also, we suggest the least requirements for adoption of this new implantation scheme and the method to optimize the key parameters such as tilt angle, rotation number, Rp compensation and Nd/Na ratio. We used MEDICI Simulator to confirm the junction device characteristics. And measured the refresh time using the ADVAN Probe tester.

• Journal of Magnetics
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• 제2권3호
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• pp.96-100
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• 1997

A spin valve structure of NiO(40 nm)/Co(2 nm)/Cu(2.6 nm)/Co(x nm)/Ta(5 nm) has been investigated for the application of magnetic random access memory (MRAM). The spin valve structure exhibited very large difference in the coercivities between pinned and free layers, a relatively high GMR ratio, and a low free layer coercivity. The spin valves were prepared by sputtering and were characterized by dc 4-point probe, and VSM. The spin valves with combined free layer exhibited a maximun GMR ratio of 10.4% with a free layer coercivity of about 82 Oe. The spin valves with a single 10 nm thick a-CoNbZr free layer exhibited a GMR ratio of about 4.3% with a free layer coercivity of about 12 Oe. The GMR ratio of the spin valves increased by addition of Co between Cu and a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr layer without losing the GMR ratio substantially, which was mainly due to high resistivity of the amorphous "layers".