• The Korean Journal of Pain
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• v.36 no.4
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• pp.450-457
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• 2023

Background: Genicular nerve neurolysis with phenol and radiofrequency ablation (RFA) are two interventional techniques for treating chronic refractory knee osteoarthritis (KOA) pain. This study aimed to compare the efficacy and adverse effects of both techniques. Methods: Sixty-four patients responding to diagnostic blockade of the superior medial, superior lateral, and inferior medial genicular nerve under ultrasound guidance were randomly divided into two groups: Group P (2 mL phenol for each genicular nerve) and Group R (RFA 80℃ for 60 seconds for each genicular nerve). The numeric rating scale (NRS) and Western Ontario and McMaster Universities Osteoarthritis Index (WOMAC) were used to evaluate the effectiveness of the interventions. Results: RFA and phenol neurolysis of the genicular nerves provided effective analgesia within groups at 1 week, 1 month, and 3 months compared to baseline. There was no significant difference between the groups in terms of NRS and WOMAC scores at all measurement times. At the 3rd month follow-up, 50% or more pain relief was observed in 53.1% of patients in Group P and 50% of patients in Group R. The rate of transient paresthesia was 34.4% in Group P and 6.3% in Group R, and this was significantly higher in Group P. Conclusions: Neurolysis of the genicular nerves with both RFA and phenol is effective in the management of KOA pain. Phenol may be a good alternative to RFA. Further studies are needed on issues such as dose adjustment to prevent transient paresthesia response.

• Journal of Chest Surgery
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• v.47 no.6
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• pp.499-503
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• 2014

Atrial fibrillation (AF) is the most common type of arrhythmia and has a large global burden. In general, treatment of AF is based on medication and consists of rate and rhythm control together with anticoagulation. However, surgical treatment may be required in patients with AF combined with organic valvular heart diseases or who experience recurrence despite medication. In addition, surgical treatment plays a role in the treatment of lone AF. This article reviews the various surgical treatment options for AF.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.217-221
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• 2004

[ $CO_2$ ]laser ablation rates for bulk 4H-SiC substrates and GaN/AIN/SiC templates in the range 229-870 ${\mu}m.min^{-1}$ were obtained for pulse energies of 7.5-30 mJ over diameters of 50·500 ${\mu}m$ with a Q-switched pulse width of ${\sim}30$ nsec and a pulse frequency of 8 Hz. The laser drilling produces much higher etch rates than conventional dry plasma etching (0.2 - 1.3 ${\mu}m/min$) making this an attractive maskless option for creating through-wafer via holes in SiC or GaN/AlN/SiC templates for power metal-semiconductor field effect transistor applications. The via entry can be tapered to facilitate subsequent metallization by control of the laser power and the total residual surface contamination can be minimized in a similar fashion and with a high gas throughput to avoid redeposition. The sidewall roughness is also comparable or better than conventional via holes created by plasma etching.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.237.2-237.2
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• 2016

A pure hafnium-carbide (HfC) coating layer was deposited onto carbon/carbon (C.C) composites using a vacuum plasma spray system. By adopting a SiC buffer layer, we successfully integrated C.C composites with a $100-{\mu}m-thick$ protective coating layer of HfC. Compared to the conventional chemical vapor deposition process, the HfC coating process by VPS showed increased growth rate, thickness, and hardness. The growth behavior and morphology of HfC coatings were investigated by FE-SEM, EDX, and XRD. From these results, it was shown that the addition of a SiC intermediate layer provided optimal surface conditions during the VPS procedure to enhance adhesion between C.C and HfC (without delamination). The thermal ablation test results shows that the HfC coating layer perfectly protected inner C.C layer from thermal ablation and oxidation. Consequently, we expect that this ultra-high temperature ceramic coating method, and the subsequent microstructure that it creates, can be widely applied to improve the thermal shock and oxidation resistance of materials under ultra-high temperature environments.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.210-222
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• 1994

The characteristics of flows, temperatures, and concentrations of oxygen are numerically studies in the Czochralski furnace with a uniform axial magnetic field. Important governing factors to the flow fields include buoyancy, thermocapillarity, centrifugal force, magnetic force, diffusion and segregation coefficients of the oxygen, evaporation coefficient in the form of SiO, and ablation rate of crucible wall. With an assumption that the flow fields have reached the steady state, which means that two velocity components in the meridional plane and circumferential velocity, temperatures, electric current intensity become non-transient, then unsteady concentration field of oxygen has been analyzed with an initially uniform oxygen concentration. Oxygen transports due to convection and diffusion in the Czochralski flow field and oxygen flux through the growing crystal surface has been investigated.

• Laser Solutions
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• v.15 no.3
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• pp.7-10
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• 2012

Dimensions (line/space) of circuits in IC substrates for high-end chips (e.g. CPU, etc.) are anticipated to decrease as small as $10{\mu}m/10{\mu}m$ in 2014. Since current etch-based circuit-patterning processes are not able to address the urgent requirement from industry, laser-based circuit patterning processes are under active research in which UV laser is used to engrave embedded circuits patterns into IC substrates. In this paper, we used a nanosecond UV laser to directly fabricate embedded circuit patterns into IC substrates with/without ceramic powders. In experiments, we engraved embedded circuit patterns with dimensions (width/depth) of abut $10{\mu}m/10{\mu}m$ and $6{\mu}m/6{\mu}m$ into the IC substrates. Due to the recoil pressure occurring during ablation, the circuit patterning of the IC substrates with ceramic powders showed the higher ablation rate.

• Archives of Plastic Surgery
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• v.42 no.1
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• pp.52-58
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• 2015

Background The erbium:yttrium scandium gallium garnet (Er:YSGG) laser differs from other laser techniques by having a faster and higher cure rate. Since the Er:YSGG laser causes an appropriate proportion of ablation and coagulation, it has advantages over the conventional carbon dioxide ($CO_2$) laser and the erbium-doped yttrium aluminum garnet (Er:YAG) laser, including heating tendencies and explosive vaporization. This research was conducted to explore the effects and safety of the Er:YSGG laser. Methods Twenty patients participated in the pilot study of a resurfacing system using a 2,790-nm Er:YSGG laser. All patients received facial treatment by the 2,790-nm Er:YSGG laser system (Cutera) twice with a 4-week interval. Wrinkle reduction, reduction in pigment inhomogeneity, and improvement in tone and texture were measured. Results Study subjects included 15 women and five men. Re-epithelization occurred in all subjects 3 to 4 days after treatment, and wrinkle reduction, reduction in pigment inhomogeneity, and improvement in tone and texture within 6 months of treatment. Conclusions The 2,790-nm YSGG laser technique had fewer complications and was effective in the improvement of scars, pores, wrinkles, and skin tone and color with one or two treatments. We expect this method to be effective for people with acne scars, pore scars, deep wrinkles, and uneven skin texture and color.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.59-62
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• 2013

At an infra-red (IR) wavelength of 1,064 nm, a diode-pumped Q-switched $Nd:YVO_4$ laser was used for the direct patterning of various transparent conductive oxide (TCO) thin films on glass substrate. With various laser beam conditions, the laser ablation results showed that the indium tin oxide (ITO) film was removed completely. In contrast, zinc oxide (ZnO) film was not etched for any laser beam conditions and indium gallium zinc oxide (IGZO) was only ablated with a low scanning speed. The difference in laser ablation is thought to be due to the crystal structures and the coefficient of thermal expansion (CTE) of ITO, IGZO, and ZnO. The width of the laser-patterned grooves was dependent on the film materials, the repetition rate, and the scanning speed of the laser beam.

• Composites Research
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• v.20 no.4
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• pp.18-24
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• 2007

The mechanical and thermal properties of PAN-based/rayon-based carbon fabrics interply hybrid composite materials have been studied. Mechanical properties including tensile and interlaminar shear strengths were improved with increasing amount of continuous PAN-based carbon fabrics. The erosion rate and insulation index were determined through the torch test. Continuous rayon-based carbon fabrics composite indicated relatively low ablation resistant property. The thermal conductivity of hybrid composite of spun PAN-based/continuous rayon-based carbon fabrics is lower than that of the continuous PAN-based carbon fabrics composite.

• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.57-62
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• 2005

Using intense pulsed ion beam evaporation technique, we have succeeded in the preparation of poly crystalline silicon thin films without impurities on silicon substrate. Good crystallinity and high deposition rate have been achieved without heating the substrate by using lEE. The crystallinity of poly-Si film has been improved with the high density of the ablation plasma. The intense diffraction peaks of poly-Si thin films could be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films were increased by applying (-) bias voltage for the substrate.