• 한국수소및신에너지학회논문집
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• 제23권1호
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• pp.43-48
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• 2012

This paper presents the characterization of micro-tubular SOFCs using three different anode current collecting methods of inlet current collection (IC), both current collection (BC) and total current collection (TC). The maximum power densities of SOFCs at $750^{\circ}C$ using IC, BC and TC were 56 mW/$cm^2$ (0.43 V, 0.13 A/$cm^2$), 236 mW/$cm^2$ (0.43 V, 0.55 A/$cm^2$) and 261 mW/$cm^2$ (0.43 V, 0.61 A/$cm^2$) respectively. It was confirmed by impedance spectroscopy that both the polarization resistance and the ohmic resistance were dramatically increased at SOFC with IC.

• 한국전기전자재료학회논문지
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• 제32권4호
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• pp.276-280
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• 2019

In this study, we investigated the crystal defects and grain boundary properties in a ZZCCC ($ZnO-Zn_2BiVO_6-Co_3O_4-Cr_2O_3-CaCO_3$) varistor, with the liquid-phase sintering aid $Zn_2BiVO_6$ developed by our laboratory. The ZZCCC varistor sintered at $1,200^{\circ}C$ exhibited excellent nonlinear current-voltage characteristics (${\alpha}=63$), with oxygen vacancy ($V_o^*$ ; 0.35 eV) as a main defect, and an apparent activation energy of 1.1 eV with an electrically single grain boundary. Therefore, among the various additives to improve the electrical properties of ZnO varistors, if $Zn_2BiVO_6$ is used as a liquid phase sintering aid, it will be ideal to use Co for the oxygen vacancy and Ca for the electrically single grain boundary. This will allow the good properties of ZnO varistors to be maintained up to high sintering temperatures.

• Journal of Electrochemical Science and Technology
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• 제9권4호
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• pp.282-291
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• 2018

The pristine fluorine-doped $SnO_2$ (abbreviated as FTO) inverse opal (IO) was developed using a 410 nm polystyrene bead template. The nanolayered copper tungsten oxide ($CuWO_4$) was decorated on the FTO IO film using a facile electrochemical deposition, subsequently followed by annealing at $500^{\circ}C$ for 90 min. The morphologies, crystalline structure, optical properties and photoelectrochemical characteristics of the FTO and $CuWO_4$-decorated FTO (briefly denoted as $FTO/CuWO_4$) IO film were investigated by field emission scanning electron microscopy, X-ray diffraction, UV-vis spectroscopy and electrochemical impedance spectroscopy, showing FTO IO in the hexagonally closed-pack arrangement with a pore diameter and wall thickness of about 300 nm and 20 nm, respectively. Above this film, the $CuWO_4$ was electrodeposited by controlling the cycling number in cyclic voltammetry, suggesting that the $CuWO_4$ formed during 4 cycles (abbreviated as $CuWO_4$(4 cycles)) on FTO IO film exhibited partial distribution of $CuWO_4$ nanoparticles. Additional distribution of $CuWO_4$ nanoparticles was observed in the case of $FTO/CuWO_4$(8 cycles) IO film. The $CuWO_4$ layer exhibits triclinic structure with an indirect band gap of approximately 2.5 eV and shows the enhanced visible light absorption. The photoelectrochemical (PEC) behavior was evaluated in the 0.5 M $Na_2SO_4$ solution under solar illumination, suggesting that the $FTO/CuWO_4$(4 cycles) IO films exhibit a photocurrent density ($J_{sc}$) of $0.42mA/cm^2$ at 1.23 V vs. reversible hydrogen electrode (RHE, denoted as $V_{RHE}$), while the FTO IO and $FTO/CuWO_4$(8 cycles) IO films exhibited a $J_{sc}$ of 0.14 and $0.24mA/cm^2$ at $1.23V_{RHE}$, respectively. This difference can be explained by the increased visible light absorption by the $CuWO_4$ layer and the favorable charge separation/transfer event in the cascading band alignment between FTO and $CuWO_4$ layer, enhancing the overall PEC performance.

• 한국결정성장학회지
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• 제28권6호
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• pp.235-242
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• 2018

$Y_2O_3$를 소결조제로 사용한 질화알루미나(AlN)에 다양한 소결조건과 MgO의 도핑이 고온전기전도도의 특성에 대해 미치는 영향에 대해 연구하였다. MgO를 도핑 하였을 때, 2차상으로 스피넬과 페로브스카이트 상이 생성되었고, 이는 전기적 특성에 영향을 끼쳤다. 고온 임피던스를 분석한 결과 MgO의 도핑은 AlN 입내의 활성화 에너지와 전기전도도의 감소를 보이는 반면에, 입계의 경우에는 활성화 에너지와 전기전도도의 증가를 보였다. 이는 저항이 높은 비정질의 액상이 입계에 형성되거나, Mg의 석출에 의하여 쇼트키 장벽이 높아졌기 때문으로 예상된다. MgO가 도핑된 AlN을 어닐링 한 경우에는 어닐링 하지 않은 경우에 비하여, 활성화 에너지와 전기전도도가 더욱 증가하는 것을 볼 수 있었다. 이러한 결과는 $1500^{\circ}C$에서 어닐링을 통하여 미세구조분석에서 보이는 바와 같이 Mg 이온이 입계에서 입내로 확산된 때문으로 예상된다.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2000년도 추계학술대회 논문집
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• pp.535-542
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• 2000

전차선로 가선재료에는 순수구리로 이루어진 전차선, 카드뮴이 포함된 조가선, steel과 Al의 이종금속으로 이루어진 ACSR이 있고 이들 재료는 산성비와 같은 부식환경에 노출되어 있다. 따라서 다양한 부식환경에서의 이들 재료의 부식특성 및 부식속도를 규명하는 것은 매우 중요한 일이다 이에 본 실험에서는 pH, 용존산소 및 염소이온의 영향을 동전위분극시험, 선형분극시험, 교류임피던스시험 및 갈바닉시험 등의 전기화학적 분석기법을 통해 가선재료의 부식거동 및 부식속도를 조사하였다. 실험 결과 카드뮴이 함유된 재료의 부식저항성이 순수구리로 이루어진 재료에서의 부식저항성보다 낮은 것을 확인하였고, 염소이온이 내식성을 감소시킨다는 것을 관찰하였으며, 갈바닉시험 결과 산성용액에서 염소이온을 첨가하였을 경우 steel의 높은 갈바닉부식 전류밀도를 ZRA 법을 통해 확인하였다.

• KIEE International Transactions on Electrophysics and Applications
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• 제11C권3호
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• pp.70-74
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• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.

• 한국전기전자재료학회논문지
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• 제31권5호
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• pp.313-319
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• 2018

This study introduces a new investigation report on the microstructural and electrical property changes of $ZnO-Zn_2BiVO_6-Mn_3O_4$ (ZZMn), where 0.33 mol% of $Mn_3O_4$ and 0.5 mol% of $Zn_2BiVO_6$ were added to ZnO (99.17 mol%) as liquid phase sintering aids. $Zn_2BiVO_6$ contributes to the decrease of sintering temperatures by up to $800^{\circ}C$, and segregates its particles at the grain boundary, while $Mn_3O_4$ enhances ${\alpha}$, the nonlinear coefficient, of varistor properties up to ${\alpha}=62$. In comparison, when the sintering temperature is increased from $800^{\circ}C$ to $1,000^{\circ}C$, the resistivity of ZnO grains decreases from $0.34{\Omega}cm$ to $0.16{\Omega}cm$, and the varistor property degrades. Oxygen vacancy ($V_o^{\bullet}$) (P1, 0.33~0.36 eV) is formed as a dominant defect. Two different kinds of grain boundary activation energies of P2 (0.51~0.70 eV) and P3 (0.70~0.93 eV) are formed according to different sintering temperatures, which are tentatively attributed to be $ZnO/Zn_2BiVO_6$-rich interface and ZnO/ZnO interface, respectively. Accordingly, this study introduces a progressive method of manufacturing ZnO chip varistors by way of sintering ZZMn-based varistor under $900^{\circ}C$. However, to procure a higher reliability, an in-depth study on the multi-component varistors with double-layer grain boundaries should be executed.

• 한국재료학회지
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• 제24권6호
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• pp.285-292
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• 2014

Commercial activated-carbon used as the electrode material of an electric double-layer capacitor (EDLC) was posttreated with various acids and alkalis to increase its capacitance. The carbon samples prepared were then heat-treated in order to control the amount of acidic functional groups formed by the acid treatments. Coin-type EDLC cells with two symmetric carbon electrodes were assembled using the prepared carbon materials and an organic electrolyte. The electrochemical performance of the EDLC was measured by galvanostatic charge-discharge, cyclic voltammetry, and electrochemical impedance spectroscopy. Among the various activated carbons, the carbon electrodes (CSsb800) prepared by the treatments of coconutshell-based carbon activated with NaOH and $H_3BO_5$, and then heat treated at $800^{\circ}C$ under a flow of nitrogen gas, showed relatively good electrochemical performance. Although the specific-surface-area of the carbon-electrode material ($1,096m^2/g$) was less than that of pristine activated-carbon ($1,122m^2/g$), the meso-pore volume increased after the combined chemical and heat treatments. The specific capacitance of the EDLC increased from 59.6 to 74.8 F/g (26%) after those post treatments. The equivalent series resistance of EDLC using CSsb800 as electrode was much lower than that of EDLC using pristine activated carbon. Therefore, CSsb800 exhibited superior electrochemical performance at high scan rates due to its low internal resistance.

• 전기화학회지
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• 제19권3호
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• pp.69-79
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• 2016

높은 에너지 밀도를 지닌 리튬 이온 전지는 현재 리튬 이온 전지에 상용화된 음극 활물질인 천연 흑연의 보다 높은 율 별 특성과 안정한 장수 명 특성을 요구하고 있다. 천연 흑연계 음극 활물질을 이용하여 리튬 전지 음극을 제작하여, SEI 피막의 형성 및 제어의 대표적인 전해질 첨가제인 VC (vinylene carbonate), VEC (vinyl ethylene carbonate), FEC (fluoroethylene carbonate)등의 다양한 첨가제를 사용하여 초기 반응에 의해 생성되는 SEI 피막을 분석하고 이에 따른 전기 화학 특성 변화를 측정하기 위하여 SEM, EVS (electorochemical voltage spectroscopy), 피막 분석, EIS (electrochemical impedance spectroscopy), FT-IR (Fourier transform infrared spectroscopy)등을 측정하여, 고온 수명 평가, 용량 유지율 및 성능 평가를 실시하여, $0^{\circ}C$ 수명특성 이후의 음극에 대한 분석을 비교 및 분석 평가 하였다. 초기 충전 시 profile에서 SEI의 형성에 의한 변화를 나타냈으며, EVS를 통하여 No-Additive가 약 0.9 V에서 SEI의 형성이 이루어지지만, VC, VEC, FEC의 경우 1 V 이상에서 형성반응이 이루어졌다. $60^{\circ}C$ 수명특성평가에서 초기 효율은 No-Additive가 가장 높게 나타나며 용량 유지율이 높게 나타났으나, cycle이 진행 될수록 충전 시 용량과 효율이 감소하여 VC, FEC보다 용량 유지율이 낮아졌고, VEC는 효율 및 용량 유지율 모두 성능이 가장 낮게 나타났다. SEM을 통하여 SEI의 변화를 확인할 수 없었지만, FT-IR을 통하여 SEI의 성분이 cycle이 진행이 될수록 첨가제에 의해 $2850-2900cm^{-1}$영역의 Alkyl carbonate ($RCO_2Li$) 계열의 성분이 더욱 견고하게 유지되는 것을 확인하였으며, EIS를 통하여 cycle이 진행될수록 저항은 증가하는 것으로 나타났고, 특히 No-Additive 및 VEC의 SEI에 의한 저항이 매우 커졌다는 것을 알 수 있었다.

• 한국세라믹학회지
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• 제44권12호
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• pp.740-746
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• 2007

The potential candidates for IT-SOFCs cathode materials, $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ (BSCF) and $La_{0.6}Ba_{0.4}Co_{0.2}Fe_{0.8}O_{3-{\delta}}$ (LBCF) powders, were synthesized by a EDTA-citrate combined method from $Sr(NO_3)_2$, $Ba(NO_3)_2$, $La(NO_3)_3{\cdot}6H_2O$, $Co(NO_3)_2{\cdot}6H_2O$, $Fe(NO_3)_3{\cdot}9H_2O$, citric acid and $EDTA-NH_3$. The cathode performance of symmetrical electrochemical cells consisting of BSCF-GDC or LBCF-GDC composite electrodes and a GDC electrolyte was investigated using by AC impedance spectroscopy at the temperature range of 500 to $700^{\circ}C$. It was found that a single phase perovskite could be successfully synthesized when the precursor is heated at $850^{\circ}C$ for 2 h. Due to thermal expansion mismatch between BSCF and GDC, the composite cathodes with lower GDC content than 45 wt% were peeled off from the GDC electrolyte and their electrode polarization resistance was estimated to be high. The thermal expansion coefficient of BSCF-GDC composites was decreased with increasing the GDC content and the electrode peeling off did not occur in BSCF-45 and 55 wt% GDC composites. BSCF-45 wt% GDC composite electrode showed the lowest area specific resistances (ASR) of 0.15 and $0.04{\Omega}{\cdot}cm^2$ at 600 and $700^{\circ}C$, respectively. On the other hand, LBCF-GDC composite cathodes showed higher ASR than the BSCF-45 and 55 wt% GDC and their cathode performance were decreased with the GDC content.