• 한국전기전자재료학회논문지
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• 제18권10호
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• pp.877-882
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• 2005

In order to fabricate a high breakdown SiC-SBD (Schottky barrier diode), we investigate an effect on metal guard ring (MGR) in breakdown characteristics of the SiC-SBD. The breakdown characteristics of MGR-type SiC-SBD is significantly dependent on both the guard ring metal and the alloying time of guard ring metal. The breakdown characteristics of MGR-type SiC-SBDs are essentially improved as the alloying time of guard ring metal is increased. The SiC-SBD without MGR shows less than 200 V breakdown voltage, while the SiC-SBD with Al MGR shows approximately 700 V breakdown voltage. The improvement in breakdown characteristics is attributed to the field edge termination effect by the MGR, which is similar to an implanted guard ring-type SiC-SBD. There are two breakdown origins in the MGR-type SiC-SBD. One is due to a crystal defects, such as micropipes and stacking faults, in the Epi-layers and the SiC substrate, and occurs at a lower electric field. The other is due to the destruction of guard ring metal, which occurs at a higher electric field. The demolition of guard ring metal is due to the electric field concentration at an edge of Schottky contact metal.

• 전기의세계
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• 제19권3호
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• pp.10-17
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• 1970

The main focus of this paper is the analysis on the controlling characteristics of self-excited D.C. motor driven by thyristor chopper. The controlling characteristics of short shunt compound motor driven by poly phase multiple thyristor chopper is better than that of driven by single phase thyristor chopper. And we got the following conclusions. A. Motor current capacity could be increased by the multiplicity n increase. B. Speed-torque characteristics is linear and adquate for constant Horsepower motor. C. Maximum current Riple ratio is proportional to almost inverse m$^{2}$. Also here shows the stable conditions and semiconducterlize datas for controlling the self-excited D.C. motor driven by thyristor chopper.

• 한국재료학회지
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• 제11권9호
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• pp.776-780
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• 2001

$SiO_2$ and polycrystalline Si layers were sequentially grown on (100) Si. NiSi was formed on this substrate from a 20nm Ni layer or a 20nm Ni/5nm Ti bilayer by rapid thermal annealing (RTA) at $300~500^{\circ}C$ to compare thermal stability. In addition, MOS capacitors were fabricated by depositing a 20nm Ni layer on the Poly-Si/$SiO_2$substrate, RTA at $400^{\circ}C$ to form NiSi, $BF_2$ or As implantation and finally drive- in annealing at $500~800^{\circ}C$ to evaluate electrical characteristics. When annealed at $400^{\circ}C$, NiSi made from both a Ni monolayer and a Ni/Ti bilayer showed excellent thermal stability. But NiSi made from a Ni/Ti bilayer was thermally unstable at $500^{\circ}C$. This was attributed to the formation of insignificantly small amount of NiSi due to suppressed Ni diffusion through the Ti layer. PMOS and NMOS capacitors made by using a Ni monolayer and the SADS(silicide as a dopant source) method showed good C-V characteristics, when drive-in annealed at $500^{\circ}C$ for 20sec., and$ 600^{\circ}C$ for 80sec. respectively.

• 전기의세계
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• 제21권2호
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• pp.9-19
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• 1972

The transient characteristics of separately excited d-c motor driven by thyristor d-c chopper is studied in this paper. The armature controlled system is applied. As a result of theoretrical analysis the following conculsions were drawn: (1) For the transient analysis, it is recognized that the state transition analysis is a more general method and powerful tool than the state equation method or signal flow graph method, although it includes iterative matrix calculations. And the system is dealt with a finite width sampled-data system in the state transition analysis. (2) The transient characteristics of the motor angular velocity and its torque to the sampling duration variation are compared with those due to the amplitude variation of d-c chopper voltage as follows. The attenuation rate of the transient characteristics is equal in both cases, but the initial value of the transient characteristics in former case is greater than in latter case. (3) The roots of characteristics equation of the system lie inside the unit circle of the Z-plane. Therefor the system is stable. Further it is found that as the sampling duration is decreased the relative stability is lessened.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1106-1110
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• 2003

The electrical characteristics of $A{\sim}C's$ ZnO varistors fabricated according to variable sintering condition, which sintering temperature is $l130^{\circ}C$ and speeds of pusher are A: 2mm/min, B: 4mm/min, C: 6 mm/min, respectively, were investigated. The varistor voltage of $A{\sim}C's$ ZnO varistors sintered at $1130^{\circ}C$ increased in order A < B $A{\sim}C's$ ZnO varistors exhibited below 2mA at rated voltage. Lightning impulse residual voltage of A's ZnO varistor suited standard characteristics, which is 3.85kV at 2.5kA, 4.4kV at 5kA and 5.16kV at 10kA. After multi lightning impulse residual voltage test of A's ZnO varistor exhibited good discharge characteristics which ZnO varistor reveals no evidence of puncture, flashover, cracking in visual examination. After high current impulse test of A's ZnO varistor exhibited good discharge characteristics, which variation rate of residual voltage is 0.4% before and after test, and revealed no evidence.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.261-265
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• 2011

This paper describes the fabrication and characteristics of a Au/Ni/Ti/3C-SiC Schottky diode with field plate (FP) edge termination. The Schottky contacts were annealed for 30 min at temperatures ranging from 0 to $800^{\circ}C$. At annealing temperature of $600^{\circ}C$, it showed an inhomogeneous Schottky barrier and had the best electrical characteristics. However, the annealing of $800^{\circ}C$ replaced it with ohmic behaviors because of the formation of many different types of nickel silicides. The fabricated Schottky diode had a breakdown voltage of 200 V, Schottky barrier height of 1.19 eV and worked normally even at $200^{\circ}C$.

• 한국기계가공학회지
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• 제17권1호
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• pp.16-22
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• 2018

Silicon carbide (SiC) is used in various semiconductor processes because it has superior thermal, mechanical, and electrical characteristics as well as higher chemical and corrosion resistance than existing materials. Due to these characteristics, various manufacturing technologies have been developed for SiC. A recent development among these technologies is Chemical Vapor Deposition SiC (CVD-SiC). Many studies have been carried out on the processing and manufacturing of CVD-SiC due to its different material characteristics compared to existing materials like RB-SiC or Sintered-SiC. CVD-SiC is physically stable and has excellent chemical and corrosion resistance. However, there is a problem with increasing the thickness, because it is manufactured through a deposition process. Additionally, due to its high strength and hardness, it is difficult to subject to machining.

• 한국식품조리과학회지
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• 제13권4호
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• pp.410-416
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• 1997

Changes in sensory and physical characteristics of Wanjajeon (Korean pan fried meat balls) were investigated during chill storage for a hospital cook/chill foodservice system. Wanjajeon was cooked, stored at 2$^{\circ}C$ or 7$^{\circ}C$ for 4 weeks, and reheated by using a microwave oven. The physical characteristics such as texture, color and organoleptic properties were measured. The chewiness of Wanjajeon increased during 4 weeks of storage at both temperatures. Reheating of stored Wanjajeon resulted in a significant increase in the hardness and chewiness. The redness (a value) was significantly increased, while the lightness and yellowness (L and b values) were changed slightly. Sensory evaluation showed that Wanjajeon was acceptable for up to 3 weeks of storage at 2$^{\circ}C$ and to 2 weeks at 7$^{\circ}C$. The sample stored at 2$^{\circ}C$ was more acceptable than that of 7$^{\circ}C$ storage through the whole period.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.552-556
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• 2002

The microstructure and electrical characteristics of A~C's ZnO varistors fabricated according to variable sintering condition, which sintering temperature is $1130^{\circ}C$ and speeds of pusher are A: 2mm/min, B: 4mm/min, C: 6mm/min, respectively, were investigated. In the microstructure, A~C's ZnO varist-ors fabricated variable sintering condition was consisted of ZnO grain(ZnO), spinel phase$(Zn_{2.33}Sb_{0.67}O_4)$ Bi-rich $phase(Bi_{2}O_{3})$, wholly. Varistor voltage of A~C's ZnO varistors sintered at $1130^{\circ}C$ increased in order A < B < C's ZnO varistors. C's ZnO varistor exhibited good characteristics that nonlinear exponent is 31.70. Leakage current of A~C's ZnO varistors exhibited below 2mA at rated voltage. Lightning impulse residual voltage of A's ZnO varistor suited standard characteristics, which is 3.85kV at 2.5kA, 4.4kV at 5kA and 5.16kV at 10kA. After multi lightning impulse residual voltage test of A's ZnO varistor exhibited good discharge characteristics which ZnO varistor reveals no evidence of puncture, flashover, cracking in visual examination. After high current impulse test of A's ZnO varistor exhibited good discharge characteristics, which variation rate of residual voltage is 0.4% before and after test, and revealed no evidence.

• 센서학회지
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• 제18권3호
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• pp.222-225
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• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C-SiC thin films grown on Si substrates with thermal oxide layer using APCVD. Pd/poly 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about 400 $^{\circ}$. The characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate, and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature $H_2$ sensor applications.