• Progress in Superconductivity and Cryogenics
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• v.12 no.4
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• pp.13-16
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• 2010

The Lorentz force distribution of a high $T_c$ superconducting tape with increasing transport currents in magnetic field ($H_a$) was visualized. The external magnetic field was applied normally to the coated conductor tape surface after zero-field cooling, and the transport current ($I_a$) was increased stepwise from 0 to 90 % of the values of the critical current ($I_c$ ($H_a$)) at applied filed, Ha. The field distribution (H(x)) near the sample surface across the tape width (2w) was measured using the scanning Hall probe method. Applying an inversion to the measured field distribution, we obtained the underlying current distribution (J(x)), from which the magnetic induction, B(x) was calculated with Biot-Savart law. Then Lorentz force per unit length was calculated using F(x)=J(x)${\times}$B(x), which appears to be very inhomogeneous along the tape width due to the complicated distributions of J(x) and B(x).

• The Korean Journal of Ecology
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• v.19 no.5
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• pp.453-463
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• 1996

Diurnal changes of microclimatic conditions and tissue water relations were measured at two sites where Carpinus laxiflora and C. cordata were allopatrically distributed. The microclimatic conditions at a site where C. laxiflora was distributed produced severe water stress condition during summer months. Daily maximum temperature reached $30.4^\circC$ and the highest vapor pressure deficit was 1.31 KPa when 13 rainless days were continued. During this period soil water content decreased to below the field capacity even at a depth of 20 cm and xylem pressure potential also decreased to ­2.04 MPa. However, turgor potential was maintained more than 0.4 MPa. Patterns of stomatal conductance were changed with evaporative demand and soil water availability. On the other hand, microclimatic conditions at a site where C. cordata was distributed were moderate water strees condition compared with those at a site C. laxiflora was distributed. Though soil water content was maintained above field capacity C. cordata showed a remarkable decrease in turgor potential and stomatal conductance throughout the experiment. These results indicate that there is a difference in habitat characteristics between the two species and C. laxiflora is more resistant than C. cordata to water stress.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.59-63
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• 2000

For the Mo-tip field emitter array, the method by which the geometrical structure of the gate insulator wall could be modified in order to improve field emission properties(turn-on voltage and gate leakage current). The device having a gate insulator of complex shape, which means the combined geometrical structure with round shape made by wet etching and vertical shape made by dry etching processes, was fabricated and the field emission properties of the three kinds of devices were compared. As a result, the electric field applied to tip apex could be increased and gate leakage current could be decreased by employing the gate insulator having geometrical wall structure of mixed shape. Finally, the obtained empirical results were analyzed by simulation of electric field distribution at/near the tip apex and gate insulator using SNU-FEAT simulator.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.199-203
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• 2010

Hybridization of semiconductor materials with carbon nanotubes (CNTs) is a recent field of interest in which new nanodevice fabrication and applications are expected. In this work, nanowire type GaAs structures are synthesized on porous single-wall carbon nanotubes (SWCNTs) as templates using the molecular beam epitaxy (MBE) technique. The field emission properties of the as-synthesized products were investigated to suggest their potential applications as cold electron sources, as well. The SWCNT template was synthesized by the arc-discharge method. SWCNT samples were heat-treated at $400^{\circ}C$ under an $N_2/O_2$ atmosphere to remove amorphous carbon. After heat treatment, GaAs was grown on the SWCNT template. The growth conditions of the GaAs in the MBE system were set by changing the growth temperatures from $400^{\circ}C$ to $600^{\circ}C$. The morphology of the GaAs synthesized on the SWCNTs strongly depends on the substrate temperature. Namely, nano-crystalline beads of GaAs are formed on the CNTs under $500^{\circ}C$, while nanowire structures begin to form on the beads above $600^{\circ}C$. The crystal qualities of GaAs and SWCNT were examined by X-ray diffraction and Raman spectra. The field emission properties of the synthesized GaAs nanowires were also investigated and a low turn-on field of $2.0\;V/{\mu}m$ was achieved. But, the turn-on field was increased in the second and third measurements. It is thought that arsenic atoms were evaporated during the measurement of the field emission.

• Kyungpook Mathematical Journal
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• v.56 no.1
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• pp.257-271
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• 2016

In this paper, we compute the trace field of C(2, s), the complement of two component chain link with s left half twists in ${\mathbb{S}}^3$, for every s. As a result, for every $n{\in}{\mathbb{N}}{\backslash}\{1\}$, we can find $s{\in}{\mathbb{Z}}$ such that the degree of the trace field of C(2, s) is n. We also prove that if for fixed p, the degree of the trace field of C(p, s) runs over ${\mathbb{N}}{\backslash}\{1\}$, then p is contained in {1, 2, 4, 8}.

• Journal of the Korean Mathematical Society
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• v.35 no.3
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• pp.793-802
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• 1998

We apply the generalization of Levy's infinitesimal equation $\delta$X(t) = $\psi$(X(s), s $\leq$ t, $Y_{t}$, t, dt), $t\in R^1$, for a random field X (C) indexed by a contour C or by a more general set. Assume that the X(C) is homogeneous in x, say of degree n, then we can appeal to the classical theory of variational calculus and to the modern theory of white noise analysis in order to discuss the innovation for the X (C.)

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.1
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• pp.24-30
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• 1991

This paper deals with the analysis of the transient characteristics of a superconducting a.c. generator(SCG) using Finite Element Method. Since the magnetic field induced by the field current and the armature currents are not sinusoidally distributed in a generator, the conventional equivalent circuit method, in general, uses the fundamental component only and is done in frequency domain. But the finite element analysis makes it possible to analyze the transient magnetic field distribution and the electrical characteristics of the double shields of SCG in time domain.

• Progress in Superconductivity
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• v.3 no.1
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• pp.130-133
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• 2001

A multifilamentary Bi-2223 HTS tape for superconducting power applications was studied through the fabrication of 250-meter long tapes by the PIT(powder in tube) process. To fabricate continuous long wire, a drawing machine, a two-drum bull block and a rolled tape winding machine were developed. Especially, 250-meter long tapes were heat treated in the shape of pancake coil to reduce the heat affect zone and to achieve the high critical current. Engineering critical current density was improved through both the enhancements of critical current density by control of thermal process and the increase of filling factor by using thin Ag alloy sheath tubes less than 1.5 mm in thickness. We have made successfully 250-meter long 37 filamentary tapes with high filling factor up to 31 % employing the modified drawing and rolling technique. The critical current of 250-meter long tapes with pancake coil type was measured by transport method at self-field up to 250 gauss of center field. The measured values, based on the transport critical current at self-field, $I_{c}$ -B characteristics and magnetic field analysis, are 34 A of I$_{c}$ and 4.0 $kA/\textrm{cm}^2$ of $J_{e}$ at 250 m, 77 K, and 0 T. We also have achieved the 56 A of I$_{c}$ and 7.0 $0 kA/\textrm{cm}^2$ of$ J_{e}$ in short tapes at 77K, self-field, and 1$mutextrm{V}$/cm.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.134-139
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• 1998

Amorphous fluorocarbon (a-C:F) is of interest for low dielectric interlayer material, but in this work we applied this material to FED field emitter. N-doped a-C:F films were deposited by inductively coupled plasma chemical vapor deposition (ICPCVD). The Raman spectra were measured to study the film structure and inter-band optical absorption coefficients were measured using Perkin-Elmer UV-VIS-IR spectrophotometer and optical band gap was obtained using Tauc's plot. XPS spectrum and AFM image were investigated to study bond structure and surface morphology. Current-electric field(I-E) characteristic of the film was measured for the characterization of electron emission properties. The optimum doping concentration was found to be [N2]/[CF4]=9% in the gas phase. The turn-on field and the emission current density at $[N_2]/[CF_4]$=9% were found to be 7.34V/$\mu\textrm{m}$ and 16 $\mu\textrm{A}/\textrm{cm}^2$ at 12.8V/$\mu\textrm{m}$, respectively.

• ETRI Journal
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• v.42 no.4
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• pp.534-548
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• 2020

This study presents a new architecture for a field programmable analog array (FPAA) for use in low-frequency applications, and a generalized circuit realization method for the implementation of nth-order elliptic filters. The proposed designs of both the FPAA and elliptic filters are based on the operational transconductance amplifier (OTA) used in implementing OTA-C filters for biopotential signal processing. The proposed FPAA architecture has a flexible, expandable structure with direct connections between configurable analog blocks (CABs) that eliminates the use of switches. The generalized elliptic filter circuit realization provides a simplified, direct synthetic method for an OTA-C symmetric balanced structure for even/odd-nth-order low-pass filters (LPFs) and notch filters with minimum number of components, using grounded capacitors. The filters are mapped on the FPAA, and both architectures are validated with simulations in LTspice using 90-nm complementary metal-oxide semiconductor (CMOS) technology. Both proposed FPAA and filters generalized synthetic method achieve simple, flexible, low-power designs for implementation of biopotential signal processing systems.