• Korean Journal of Materials Research
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• v.19 no.1
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• pp.28-32
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• 2009

Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, ${\Phi}_B$) was 107 V and 0.67 eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition and etching method was employed, and the electrical properties of the diodes were improved. The modified SBDs showed enhanced electrical properties, as witnessed by a breakdown voltage of 635 V, a Schottky barrier height of ${\Phi}_B$=1.48 eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of $V_F$=1.6 V, a specific on resistance of $R_{on}=2.1m{\Omega}-cm^2$ and a power loss of $P_L=79.6Wcm^{-2}$.

• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.160-162
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• 1996

The estimation of AC losses is demanded for higher efficiency and stability in AC use of superconducting coils. Hysteresis loss occurred by a.c. transport current is called of self field loss, and it is major part of losses generated in a.c. superconducting wire in case of located in low external magnetic field as superconducting transformer with iron core, or in short twist pitch wire, multiply stacking cable. In this paper, we calculate self field loss of superconducting wire.

• Bulletin of the Korean Chemical Society
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• v.24 no.12
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• pp.1827-1831
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• 2003

Field emission of carbon nanotubes (CNTs) fabricated by disproportionation of CO has been studied. CNTs fabricated on well-ordered Co nanowire arrays formed on the porous anodic aluminum oxide templates were well graphitized, uniform in diameter and aligned vertically with respect to the plane of the template, and showed a good field emission property. Very uniform emissions were observed from the CNTs fabricated at relatively low temperature, $500-600^{\circ}C$. Low fabrication temperature such as $500^{\circ}C$ could make it possible to fabricate CNTs on soda lime glass, a low-cost substrate, for display panel.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2135-2137
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• 2005

This paper describes the features of electric and magnetic fields produced by lightning discharges. The measuring system consists of fast electric field sensor, crossed-loop magnetic field sensors, signal processing circuit, A/D converter and data acquisition equipment with a 12bit resolution and 10[MS/s] sampling rate. The frequency bandwidth and responsitivity of the electric field measuring system were 40[Hz]${\sim}$2.6 [MHz] and 2.08 (V/m/mV) and those of the magnetic field measuring system were 400[Hz]${\sim}$1[MHz] and 2.78[nT/mV], respectively. The electric and magnetic fields produced by lightning discharges were observed, and the features and parameters of the waveforms were analyzed.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.21 no.12
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• pp.1563-1575
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• 1997

To understand EHD nucleate boiling heat transfer enhancement, EHD effects on R-113 nucleate boiling heat transfer in a non-uniform electric field were investigated. The pool boiling heat transfer and the dynamic behavior of bubbles in d.c./a.c. electric fields under a saturated or subcooled boiling were studied by using a plate-wire electrode and a high speed camera. From the pool boiling heat transfer study, the shift of the pool boiling curve, the increase of the heat transfer and the delay of ONB and CHF points to higher heat fluxes were observed. From the dynamic behavior of bubbles, it was observed that bubbles departed away from the whole surface of the heated wire in radial direction due to EHD effects by a nonuniform electric field. With increasing applied voltages, the bubble size decreased and the active nucleation site and the departure number of bubbles showed the different trend. The present study indicates that the EHD nucleate boiling heat transfer is closely connection with the dynamic behavior of bubbles and the secondary flow induced near the heated surface. Therefore, the basic studies on the bubble behavior such as bubble frequency, bubble diameter, bubble velocity and flow characteristics are necessary for complete understanding of the enhancement mechanism of the boiling heat transfer using an electric field.

• Research in Plant Disease
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• v.11 no.2
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• pp.106-114
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• 2005

To breed powdery mildew resistant varieties, 104 accessions of Cucurbita spp. germplasm were evaluated. Powdery mildew resistance and horticultural characteristics of the accessions were investigated in the field conditions. C. martinezii was selected for high resistance to powdery mildew in the field. The growth of powdery mildew pathogen and response of leaf surface tissue to the pathogen were observed after artificial inoculation to resistant C martinezii and susceptible C. moschata cv. 'Wonye No.402'. Mycelium growth was very clearly different between resistant C. martinezii and susceptible C moschata cv. 'Wonye No. 402' at 5 days after inoculation at the adult stage. Interspecific hybridization was attempted to transfer powdery mildew resistance gene(s) from C. martinezii to C. moschata. A single dominant gene action was postulated as deter mining powdery mildew resistance at the seedling stage. But for the effective selection of powdery mildew resistant individuals, it was established that adult plant resistance should be confirmed in the field conditions after the seedling test. Through the seedling and field tests, C. moschata lines resistant to powdery mildew and superior to horticultural characteristics, were selected after 2 backcrossing and 3 selfing generations. The fruit characteristics of newly developed lines were similar to those of the recurrent parent, 'Jaechenjarae'.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.191-192
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• 2005

The reverse breakdown voltages of 4H-SiC SBD(schottky barrier diode)s with FP(Field Plate) and/or FLR(Field Limiting Ring) as a edge termination, were investigated. The breakdown voltages of SBDs with FP ware investigated varying the overlap width from $1{\mu}m$ to $30{\mu}m$. The maximum average breakdown voltages was 475V. There is no significant changes for the devices with overlap width of between $5{\mu}m\sim30{\mu}m$. It was confirmed that the dielectric breakdown of the thin thermal oxide is main cause of device failure. However, the breakdown voltage of SBD with FLR was 1400V even though the FLR edge termination structure was not optimized.

• Journal of Adhesion and Interface
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• v.22 no.3
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• pp.91-97
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• 2021

By introducing an organic interlayer on the Parylene C dielectric surface, the electrical device performances and the operating stabilities of organic field-effect transistors (OFETs) were improved. To achieve this goal, hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (ODTS), as the organic interlayer materials, were used to control the surface energy of the Parylene C dielectrics. For the bare case used with the pristine Parylene C dielectrics, the field-effect mobility (μ_FET) and threshold voltage (V_th) of dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]- thiophene (DNTT) FET devices were measured at 0.12 cm²V^-1s^-1 and - 5.23 V, respectively. On the other hand, the OFET devices with HMDS- and ODTS-modified cases showed the improved μ_FET values of 0.32 and 0.34 cm²V^-1s^-1, respectively. More important point is that the μ_FET and V_th of the DNTT FET device with the ODTS-modified Parylene C dielectric presented the smallest changes during a repeated measurement of 1000 times, implying that it has the most stable operating stability. The results could be meaned that the organic interlayer, especially ODTS, effectively covers the Parylene C dielectric surface with alkyl chains and reduces the charge trapping at the interface region between active layer and dielectric, thereby improving the electrical operating stability.

• Progress in Superconductivity
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• v.3 no.1
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• pp.31-35
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• 2001

We investigated the temperature and magnetic field dependent optical properties of a$ MgB_2$ thin film in the far-infrared region. In the superconducting state, i.e. 5 K, we obtained the values of superconducting gap $2\Delta$ ~ 5.2 meV and $2\Delta$ $_{k}$ $B/T_{c}$ ~1.8. Although the value of$ 2\Delta$$B/T_{c}$ was nearly half of the BCS value, the $2\Delta$ seemed to follow the temperature dependence of the BCS formula. Under the magnetic field (H), the superconducting state became suppressed. Interestingly, we found that the normal state area fraction abruptly increased at low field but slowly increased at high field. It did not follow the H-dependences predicted for a s-wave superconductor (i.e. a linear dependence) nor for a s-wave one (i.e. $H^{1}$2/ dependence). We discussed the complex gap nature of $MgB_2$ in comparison with two gap and anisotropic s-wave scenarios.ios.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.11-16
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• 2016

Silicon carbide (SiC) has received significant attention over the past decade because of its high-voltage, high-frequency and high-thermal reliability in devices compared to silicon. Especially, a SiC Schottky barrier diode (SBD) is most often used in low-voltage switching and low on-resistance power applications. However, electric field crowding at the contact edge of SBDs induces early breakdown and limits their performance. To overcome this problem, several edge termination techniques have been proposed. This paper proposes an improvement in the breakdown voltage using a double-field-plate structure in SiC SBDs, and we design, simulate, fabricate, and characterize the proposed structure. The measurement results of the proposed structure, demonstrate that the breakdown voltage can be improved by 38% while maintaining its forward characteristics without any change in the size of the anode contact junction region.