• 제목/요약/키워드: a-si PV

검색결과 91건 처리시간 0.037초

응력 주입 층을 이용한 Kerf-less 웨이퍼링 기술 동향

  • 양현석;엄누시아;김지원;임재홍
    • 세라미스트
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    • 제21권2호
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    • pp.75-82
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    • 2018
  • In the photovoltaics (PV) industry, there were many efforts to reduce the cost of production with high efficiency. The single most important cost factor in silicon technology is the wafer, accounting presently for ~35% of the module cost. it was already shown that the solar cell efficiency can be maintained up to the thickness range of $40-60{\mu}m$. The direct production of ultra-thin silicon wafer is very attractive and numerous different techniques, such as electrochemical process, ion implantation, and epitaxial growth, have been proposed and developed in many academic and industrial laboratories.

투과율에 따른 비정질실리콘 BIPV 시스템 효율 평가 (Performance Evaluation of a-Si BIPV System According to Transmittance Variation)

  • 차광석;이병두;김강석;신승철;이대우
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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    • pp.60.1-60.1
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    • 2010
  • 공동주택에서 태양광발전(PV)을 통한 세대 전기에너지 이용은 모듈 설치 면적의 제약으로 인해 전 세대를 대상으로 활용하기에 현실적으로 어려움이 있다. 특히 남향이나 남동, 남서향으로 위치한 거실 창호를 활용하는 경우에도 결정질 실리콘(crystalline silicon) 태양전지 셀로 인한 실내 음영문제 등으로 건물통합형 태양광발전(BIPV) 시스템의 가시성을 확보하는데 한계가 있다. 따라서 이런 문제점을 극복하고자 투광형 비정질실리콘(amorphous silicon) 태양전지를 이용한 발코니창호/커튼월 BIPV 시스템을 구축하고, 테스트베드를 통한 적용성 평가 검증을 수행하였다. 테스트베드는 KCC 중앙연구소 1층 외부 측창에 결정질 BIPV 모듈(A2PEAK 사(社), 최대 출력 210 Wp, W 2,000 mm ${\times}$ H 1,066 mm)과 10% 및 30% 투광형 비정질 BIPV 모듈(Sharp 사(社) See Through type, 최대 출력 135 Wp/123 Wp, W 1,930 mm ${\times}$ H 1,180 mm)을 각각 설치(남서 $30^{\circ}$, 수직 $90^{\circ}$)하여, 2009년 5월에서 8월 사이 4개월에 걸친 모니터링을 통해 실제 발전량 데이터를 확보, 시스템에 대한 분석을 진행하였다. 분석 결과, 설치용량당 일평균 발전량은 결정질형이 1.46 kWh/kWp, 10% 투광형은 1.10 kWh/kWp, 30% 투광형은 0.73 kWh/kWp을 나타내었다. 10% 투광형과 30% 투광형의 모듈 성능 차이는 크지 않으나 발전량에 있어서는 큰 차이를 보였고, 10% 투광형의 설치용량당 일평균 발전량은 경정질형의 75.2% 수준으로 투광형 비정질실리콘 BIPV 시스템의 창호 적용 가능성을 확인하였다. 특히 세대 거실 창호를 통한 가시성 확보는 기존 결정질 BIPV 창호의 단점을 개선하였다. 건자재 일체화로 구축된 가시성확보 BIPV시스템 창호는 단위 세대별 적용이 쉽고, 공동주택에서 PV 시스템의 설치면적을 극대화시키므로 향후 Zero Energy 공동주택 구축에도 활용성이 클 것으로 기대된다.

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에미터 랩쓰루 실리콘 태양전지 개발 (Current Status of Emitter Wrap-Through c-Si Solar Cell Development)

  • 조재억;양병기;이홍구;현덕환;정우원;이대종;홍근기;이성은;홍정의
    • Current Photovoltaic Research
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    • 제1권1호
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    • pp.17-26
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    • 2013
  • In contrast to conventional crystalline cells, back-contact solar cells feature high efficiencies, simpler module assembly, and better aesthetics. The highest commercialized cell and module efficiency was recorded by n-type back-contact solar cells. However, the mainstream PV industry uses a p-type substrate instead of n-type due to the high costs and complexity of the manufacturing processes in the case of the latter. P-type back-contact solar cells such as metal wrap-through and emitter wrap-through, which are inexpensive and compatible with the current PV industry, have consequently been developed. In this paper the characteristics of EWT (emitter wrap-through) solar cells and their status and prospects for development are discussed.

무기고분자의 나노임프린트법에 의한 세라믹 선형 패턴의 제조 (Fabrication of Ceramic Line Pattern by UV-Nanoimprint Lithography of Inorganic Polymers)

  • 박준홍;팜안뚜앙;이재종;김동표
    • 폴리머
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    • 제30권5호
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    • pp.407-411
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    • 2006
  • 액상의 고분자 전구체 polyvinylsilazane (PVS) 혹은 allylhydridopolycarbosilane(AHPCS)를 실리콘 기판 위에 스핀 코팅한 다음, DVD 마스터로부터 제조된 polydimethylsiloxane(PDMS) 몰드를 이용한 자외선 나노임프린트법으로 나노 크기의 고분자 패턴을 제조하였다. 나아가 질소 분위기하에서 $800^{\circ}C$ 열처리함으로써 각각 SiCN, SiC 세라믹 패턴도 제조하였다. 가교된 고분자와 세라믹 패턴의 폭과 넓이를 원자힘현미경(AFM)과 주사전자현미경(SEM)으로 관측한 결과 PVS와 AHPCS의 패턴 높이는 각각 38.5%와 24.1%, 패턴 폭은 18.8%와 16.7%의 수축률을 나타내었다. 즉 전구체의 세라믹 수율이 높을수록 세라믹 패턴 수축률은 낮아졌고, 패턴과 기판과의 접착에 의한 수축억제로 이방성 수축현상도 관찰되었다. 본 연구결과는 새로운 세라믹 MEMS 소자제작공정으로서 나노임프린트법의 가능성과 수축률 제어 연구가 필요함을 제시하고 있다.

가변 히스테리시스 전류제어기를 이용한 연계형 태양광 인버터의 제어 (Control of Grid-Connected Photovoltaics Inverter Using Variable Hysteresis Band Current Controller)

  • 최연옥;조금배;백형래;김시경;유권종;송진수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1996년도 하계학술대회 논문집 A
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    • pp.525-527
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    • 1996
  • Hysteresis current control is one of the simplest techniques used to control currents for high speed drive systems, because of its simplicity of implementation, fast current control response, and inherent peak current limiting capability. However the conventional fixed-band hysteresis control has a variable switching frequency throughout the fundamental period, and consequently the load current harmonics spreaded on the wide frequency range. In this paper, a simple, novel alterative approach is proposed for a variable-hysteresis band current controller which uses feedback techniques to achieve constant switching frequency with good dynamic response. The method is easily implemented in hardware, the resultant controller is easily tuned to a particular load, and has good immunity to variation in PV parameter and dc supply voltage.

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중금속 오염이 n형 실리콘 태양전지의 전기적 특성에 미치는 영향에 대한 연구 (Influence of Metallic Contamination on Photovoltaic Characteristics of n-type Silicon Solar-cells)

  • 김일환;박준성;박재근
    • Current Photovoltaic Research
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    • 제6권1호
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    • pp.17-20
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    • 2018
  • The dependency of the photovoltaic performance of p-/n-type silicon solar-cells on the metallic contaminant type (Fe, Cu, and Ni) and concentration was investigated. The minority-carrier recombination lifetime was degraded with increasing metallic contaminant concentration, however, the degradation sensitivity of recombination lifetime was lower at n-type than p-type silicon wafer, which means n-type silicon wafer have an immunity to the effect of metallic contamination. This is because heavy metal ions with positive charge have a much larger capture cross section of electron than hole, so that reaction with electrons occurs much more easily. The power conversion efficiency of n-type solar-cells was degraded by 9.73% when metallic impurities were introduced in the silicon bulk, which is lower degradation compared to p-type solar-cells (15.61% of efficiency degradation). Therefore, n-type silicon solar-cells have a potential to achieve high efficiency of the solar-cell in the future with a merit of immunity against metal contamination.

단결정 태양전지의 단락 및 개방 시 노광에 의한 초기 출력저하 비교 분석 (Analysis and comparison of initial performance degradation for single crystalline silicon solar cell under open and short circuit)

  • 정태희;김태범;신준오;윤나리;우성철;강기환;안형근;한득영
    • 한국태양에너지학회 논문집
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    • 제30권6호
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    • pp.16-21
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    • 2010
  • It is well-known that Boron-doped Cz Si solar cells suffer light-induced degradation due to boron-oxygen defect which is responsible of a reduction in lifetime and hence efficiency. In this paper, we assume that PV solar cell has been connected with variable load to account the real operating condition and it shows different light-induced degradation of Si solar cell. To evaluate the effect of light-induced degradation for solar cell with various load, Single crystalline solar cells are connected with open and short circuits during light exposure. Isc-Voc curve evaluate light induced degradation of solar cells and the reason is explained as a change for serial resistance. From the results, Electrical characteristics of solar cells show better performance under short circuit conditions, after light exposure.

건물적용 태양광발전시스템의 국내 지역에 따른 설치각도별 연간 전력생산량 예측에 관한 연구 (Annual energy yield prediction of building added PV system depending on the installation angle and the location in Korea)

  • 김동수;신우철;윤종호
    • KIEAE Journal
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    • 제14권1호
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    • pp.67-74
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    • 2014
  • There have distinctly been no the installation criteria and maintenance management of BIPV systems, although the BIPV market is consistently going on increasing. In addition, consideration of the BIPV generation quantity which has been installed at several diverse places is currently almost behind within region in Korea. Therefore, the main aim of this study is to evaluate the BIPV generation and to be base data of reducing rate depending on regional installation angles using PVpro which was verified by measured data. Various conditions were an angle of inclination and azimuth under six major cities: Seoul, Daejeon, Daegu, Busan, Gwangju, Jeju-si for the BIPV system generation analysis. As the results, Seoul showed the lowest BIPV generation: 1,054kWh/kWp.year, and Jeju-si have 5percent more generation: 1,108.0kWh/kWp.year than Seoul on horizontal plane. Gwangju and Daejeon turned out to have similar generation of result, and Busan showed the highest generation: 1,193.5kWh/kWp.year, which was increased by over 13percent from Seoul on horizontal plane. Another result, decreasing rate of BIPV generation depending on regional included angle indicate that the best position was located on azimuth: $0^{\circ}$(The south side) following the horizontal position(an angle of inclination: $30^{\circ}$). And the direction on a south vertical position(azimuth: $0^{\circ}$, an angle of inclination: $90^{\circ}$) then turned out reducing rate about 40percent compared with the best one. Therefore, these results would be used to identify the installation angle of the BIPV module as an appropriate position.

Modulation of Quorum Sensing in Acyl-homoserine Lactone-Producing or -Degrading Tobacco Plants Leads to Alteration of Induced Systemic Resistance Elicited by the Rhizobacterium Serratia marcescens 90-166

  • Ryu, Choong-Min;Choi, Hye Kyung;Lee, Chi-Ho;Murphy, John F.;Lee, Jung-Kee;Kloepper, Joseph W.
    • The Plant Pathology Journal
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    • 제29권2호
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    • pp.182-192
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    • 2013
  • Numerous root-associated bacteria (rhizobacteria) are known to elicit induced systemic resistance (ISR) in plants. Bacterial cell-density-dependent quorum sensing (QS) is thought to be important for ISR. Here, we investigated the role of QS in the ISR elicited by the rhizobacterium, Serratia marcescens strain 90-166, in tobacco. Since S. marcescens 90-166 produces at least three QS signals, QS-mediated ISR in strain 90-166 has been difficult to understand. Therefore, we investigated the ISR capacity of two transgenic tobacco (Nicotiana tabacum) plants that contained either bacterial acylhomoserine lactone-producing (AHL) or -degrading (AiiA) genes in conjunction with S. marcescens 90-166 to induce resistance against bacterial and viral pathogens. Root application of S. marcescens 90-166 increased ISR to the bacterial pathogens, Pectobacterium carotovorum subsp. carotovorum and Pseudomonas syringae pv. tabaci, in AHL plants and decreased ISR in AiiA plants. In contrast, ISR to Cucumber mosaic virus was reduced in AHL plants treated with S. marcescens 90-166 but enhanced in AiiA plants. Taken together, these data indicate that QS-dependent ISR is elicited by S. marcescens 90-166 in a pathogen-dependent manner. This study provides insight into QS-dependent ISR in tobacco elicited by S. marcescens 90-166.

다양한 환경조건에서 태양전지모듈의 PID회복특성 (PID Recovery Characteristics of Photovoltaic Modules in Various Environmental Conditions)

  • 이은석;정태희;고석환;주영철;장효식;강기환
    • 한국태양에너지학회 논문집
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    • 제35권5호
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    • pp.57-65
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    • 2015
  • The Potential Induced Degradation(PID) in PV module mainly affected by various performance conditions such as a potential difference between solar cell and frame, ambient temperature and relative humidity. The positive charges as sodium ions in front glass reach solar cell in module by a potential difference and are accumulated in the solar cell. The ions accelerate the recombination of generation electrons within solar cell under illumination, which reduces the entire output of module. Recently, it was generally known that PID generation is suppressed by controlling the thickness of SiNx AR coating layer on solar cell or using Sodium-free glass and high resistivity encapsulant. However, recovery effects for module with PID are required, because those methods permanently prevent generating PID of module. PID recovery method that voltage reversely applies between solar cell and frame contract to PID generation begins to receive attention. In this paper, PID recovery tests by using voltage under various outdoor conditions as humidity, temperature, voltage are conducted to effectively mitigate PID in module. We confirm that this recovery method perfectly eliminates PID of solar cell according to repeative PID generation and recovery as well as the applied voltage of three factors mainly affect PID recovery.