• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.7 no.2
• /
• pp.255-262
• /
• 2003

In this paper, an investigation on the ZnO film deposition using radio-frequency magnetic sputtering techniques on aluminum bottom electrode for film bulk acoustic wave resonator (FBAR) filter applications and the temperature effects on the ZnO film growth is presented. The investigation on how much impact the actual process temperature may have on the crystal growth is more meaningful if it is considered that the piezoelectricity property of ZnO films plays a dominant role in determining the resonance characteristics of FBAR devices and the piezoelectricity is determined by the degree of the c-axis preferred orientation of the deposited ZnO films. In this experiment, it was found that the growth of ZnO crystals has a strong dependence on the deposition temperature ranged from room temperature to $350^{\circ}C$ regardless of the RF powers applied and there exist 3 temperature regions divided by 2 critical temperatures according to the degree of the c-axis preferred orientation. Overall, below $200^{\circ}C$, ZnO deposition results in columnar grains with a highly preferred c-axis orientation. With this ZnO film, a multilayered FBAR structure could be realized successfully.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.5
• /
• pp.397-400
• /
• 2013

Off-axis magnetron sputtering was used for the crystallized ITO thin films deposition at various temperatures from 25 to $120^{\circ}C$. The ITO thin films were crystallized at $50^{\circ}C$ for Si (001) substrates and at $75^{\circ}C$ for PET substrate. The ITO thin films grown onto PET substrate at $120^{\circ}C$ were crystallized with a (222) preferred orientation. The 160-nm thick ITO films showed a resistivity of about $7{\times}10^{-4}{\Omega}{\cdot}cm$ and a transmittance of about 84% at a wavelength of 550 nm. Off-axis sputtering can be applied for low temperature crystallization of the ITO films.

• Journal of the Korean Ceramic Society
• /
• v.39 no.5
• /
• pp.511-516
• /
• 2002

Hexagonal $YMnO_3$ thin films were prepared from $Y(NO_3)_3{\cdot}5H_2O$ and $Mn(CH_3CO_2)_2{\cdot}4H_2O$ as starting materials on the Si(100) substrates by the sol-gel method. The crystal structure and the electrical properties of the $YMnO_3$ thin films were investigated as a function of heat treatment temperature, the amount of water(Rw) of hydrolysis and the addition of catalysis. The crystallization of the $YMnO_3$ thin film began at 700${\circ}C$ and completed at 800${\circ}C$ for 1 h. The c-axis (0001) preferred orientation of hexagonal $YMnO_3$ was detected for the $YMnO_3$ thin films with Rw=6 and that was decreased for the $YMnO_3$ thin films with Rw=1 and Rw=12. The crystallinity and preferred orientation of the $YMnO_3$ thin films were depended on the addition of acid and/or alkali catalysis, which, in turn, the preferred orientation of c-axis was decreased and the orthorhombic phase of $YMnO_3$ was detected to the specimens with the addition of catalysis. The $YMnO_3$ thin film with Rw=6 showed good leakage current density of $1.2{\times}10-8 A/cm^2$ at the applied voltage of 0.2V and the leakage current density was not changed drastically with applied voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.2
• /
• pp.126-130
• /
• 2011

In this study, off-axis magnetron sputtering was used for the crystallized ITO thin films at a low temperature of about $120^{\circ}C$ instead of the conventional RF sputtering because the off-axis sputtering can avoid the damage for the plasma as well as fabrication of thin films with a high quality. The ITO thin films grown on PET substrate at $120^{\circ}C$ were crystallized with a (222) preferred orientation. 58-nm thick ITO films showed a resistivity of about $2{\times}10-4{\Omega}{\cdot}cm$ and a transmittance of about 75% at a wavelength of 550 nm. The transmittance of the ITO thin films by an insertion of SiO2 thin films on ITO films was improved.

• Journal of the Korean Ceramic Society
• /
• v.40 no.6
• /
• pp.547-552
• /
• 2003

ZnO thin films on glass substrate were deposited by RF magnetron reactive sputtering at 100 W, 1.33 Pa, Ar/O2=50 : 50, 200$^{\circ}C$, and a target/substrate distance of 4 cm. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, AFM, RBS, and electrometer. All films showed a strong preferred c-axis orientation and the chemical stoichiometry. The propagation velocity of ZnO/IDT/glass of single electrode and double electrode types SAW filter was about 2,589 m/sec, 2,533 m/sec and insertion loss was a minimum value of about -11 dB and -21 dB, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.05b
• /
• pp.10-14
• /
• 2005

Zinc Oxide(ZnO) thin films on Si (100) substrates were deposited by RF magnetron reactive sputtering. The characteristics of zinc oxide thin films with changing sputtering conditions such as argon/oxygen gas ratios, RF power, and substrate temperature, chamber pressure and target-substrate distance were investigated. To analyze a crystallographic properties of the films, $\theta/2{\theta}$ mode X -ray diffraction, SEM, and AFM analyses. C-axis preferred orientation, resistivity, and surface roughness highly depended on Ar/$O_2$ gas ratios. The resistivity of ZnO thin films rapidly increased with increasing oxygen ratio and the resistivity value of $9{\times}10^7\;{\Omega}cm$ was obtained at a working pressure of 10 mTorr with Ar/$O_2$=50/50. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with Ar/$O_2$=50/50 showed the excellent roughness value of $28.7{\AA}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.04b
• /
• pp.101-104
• /
• 2004

In this study AlN/Al thin films were prepared at various conditions, such as $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ from 0.6 to 0.9, a substrate temperature ranging from room temperature to $300^{\circ}C$ and working pressure 1mTorr. We estimated crystallographic characteristics and c-axis preferred orientations of AlN/Al thin films as function of Al electrode surface roughfness. The optimal processing conditions for Al electrode were found at substrate temperature of $300^{\circ}C$, sputtering power of 100W and a working pressure of 2mTorr. In these conditions, we obtained the c-axis preferred orientation of $AlN/Al/SiO_2/Si$ thin film about 4 degree.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.151-154
• /
• 1999

ZnO thin films on glass substrate were deposited by RF magnetron reactive sputter with various argodoxygen gas ratios and substrate temperatures. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, XPS and electrometer(keith1ey 617). All films showed a strong prefered orientation along the c-axis on glass substrate, and the chemical stoichiometry was obtained at Ar/$O_2$=50/50. The propagation velocity of ZnO SAW filter was about 2, 590 dsec and insertion loss was a minimum value of about -21dB.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.2
• /
• pp.109-113
• /
• 2013

ZnO thin films were synthesized on Si substrates by MOCVD using diethyl zinc as a precursor. Effects of $O_2$/DEZ gas mixing ratio on the growth rate, surface morphology, preferred orientation, and electrical properties of the ZnO thin films were investigated with SEM, XRD, and Hall measurement. The surface reflectance variations of ZnO thin films were analyzed using laser-photometer apparatus. As the $O_2$/DEZ mixing ratio increased, growth rate and $I_{(002)}/I_{(101)}$ in XRD of ZnO thin films decreased, and the crystal structure was changed from columnar to planar structure. All ZnO films deposited at various CVD conditions exhibited c-axis (002) plane preferred orientation. The electrical properties of ZnO thin films mainly depended on the carrier mobility.

• Journal of the Korean Ceramic Society
• /
• v.40 no.12
• /
• pp.1154-1158
• /
• 2003

Hydrothermal deposition of hydroxyapatite coatings on $Al_2$O$_3$ substrates was studied using aqueous solutions of Ca(NO$_3$)$_2$ㆍ4$H_2O$ and (NH$_4$)$_2$HPO$_4$ containing EDTA disodium salt as a chelating agent for $Ca^{2+}$. For the precipitation of the coatings the EDTA-Ca$^{2+}$ chelates were dissociated thermally at 20$0^{\circ}C$ or decomposed by oxidation with $H_2O$$_2$ at 9$0^{\circ}C$. Scanning electron microscopy and X-ray diffraction were used to investigate the deposition behavior and the phase of the coatings. Hydroxyapatite coatings were not deposited with the thermal dissociation method, whereas uniform deposition of the coatings (about 0.7 $\mu\textrm{m}$ thickness) was obtained with the oxidative decomposition method. The coatings consisted of fine rod-like hydroxyapatite crystals (hexagonal structure) with 60-80 nm diameters, having some preferred orientation with their length (i.e., the c axis) perpendicular to the substrate.ate.