• Title/Summary/Keyword: a-SiPV module

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A Brief Review of Power Semiconductors for Energy Conversion in Photovoltaic Module Systems (태양광 모듈 시스템의 에너지 변환을 위한 전력 반도체에 관한 리뷰)

  • Hyeong Gi Park;Do Young Kim;Junsin Yi
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.2
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    • pp.133-140
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    • 2024
  • This study offers a comprehensive evaluation of the role and impact of advanced power semiconductors in solar module systems. Focusing on silicon carbide (SiC) and gallium nitride (GaN) materials, it highlights their superiority over traditional silicon in enhancing system efficiency and reliability. The research underscores the growing industry demand for high-performance semiconductors, driven by global sustainable energy goals. This shift is crucial for overcoming the limitations of conventional solar technology, paving the way for more efficient, economically viable, and environmentally sustainable solar energy solutions. The findings suggest significant potential for these advanced materials in shaping the future of solar power technology.

A Study of Characterization of Multi-Crystalline Silicon Solar Cell Module using by RIE and Wet Texturing for BIPV (BIPV용 건식 및 습식 텍스쳐링 공정에 의한 다결정실리콘 태양전지 모듈 특성 연구)

  • Seo, Il-Won;Yun, Myung-Soo;Jo, Tae-Hoon;Son, Chan-Hee;Cha, Sung-Ho;Lee, Sang-Du;Kwon, Gi-Chung
    • New & Renewable Energy
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    • v.9 no.2
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    • pp.30-39
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    • 2013
  • Multi-crystalline silicon solar cells is not exist a specific crystal direction different from single crystalline silicon solar cells. In functional materials, therefore, isotropic wet etching of mc-Si solar cell is easy the acid solution rather than the alkaline solution. The reflectance of wet texturing process is about 25% and the reflectance of RIE texturing process is achieved less than 10%. In addition, wet texturing has many disadvantages as well as reflectance. So wet texturing process has been replaced by a RIE texturing process. In order to apply BIPV, RIE and wet textured multi-crystalline silicon solar cell modules was manufactured by different kind of EVA sheet. Moreover, in case of BIPV, the short circuit current characteristics according to the angle of incidence is more important, because the installation of BIPV is fixed location. In this study, we has measured SEM image and I-V curve of RIE and wet textured silicon solar cell and PV module. Also we has analyzed quantum efficiency characteristics of RIE and wet textured silicon solar cell for PV modules depending on incidence angle.

A Study on the Reduction of Building Energy Consumption and Generation of BIPV System According to the Increase of the Number of Floors in Office Building (사무소건물 층수 증가에 따른 BIPV 발전량과 건물에너지소비량 저감에 관한 연구)

  • Oh, Myung-Hwan;Yoon, Jong-Ho;Shin, Woo-Cheol
    • 한국태양에너지학회:학술대회논문집
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    • 2011.04a
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    • pp.36-41
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    • 2011
  • BIPV system that can alternate building envelope by making materials of PV module should be considered in initial design step for applying PV system efficiently in office building. Mean while, area of the building skin also increases as the number of floors increases, but the valid area that can apply BIPV system in effect decreases relatively. Despite of this weak point, installing BIPV system is still being evaluated as the only measure left that can reduce electronic energy consumption in the building. Therefore, the impact on building energy consumption according to the increase of the number of floors when BIPV system is applied in the building was analyzed. And it will be used as basic information for application of BIPV in office building. Conomic about application of BIPV is interpreted to be secured within the 10 story high. Forover the 11 floors, the methods of increasing the contribution ratio produced by BIPV system through the optimization of install angle and increase in install area of south, high efficiency should be considered. The ways to reduce basic load by integrated design with another renewable energy besides BIPV should be found. Later, the study on the total building energy comsumption with PV generation according to the various type of the basic load and ratio of the width and depth will be performed based on this study.

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Characterization of Soldering Property on Heating Condition by Infrared Lamp Soldering Process for C-Si Photovoltaic Modules (적외선 램프 가열방식을 이용한 태양전지 셀의 솔더링 공정 및 열처리 조건 별 특성 평가)

  • Son, Hyoun Jin;Lee, Jung Jin;Kim, Sung Hyun
    • Current Photovoltaic Research
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    • v.4 no.2
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    • pp.59-63
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    • 2016
  • A key point of a soldering process for photovoltaic (PV) modules is to increase an adhesive strength leading a low resistivity between ribbon and cell. In this study, we intended to optimize a heating condition for the soldering process and characterize the soldered joint via physical and chemical analysis methods. For the purpose, the heating conditions were adjusted by IR lamp power, heating time and hot plate temperature for preheating a cell. Since then the peel test for the ribbon and cell was conducted, consequently the peel strength data shows that there is some optimum soldering condition. In here, we observed that the peel strength was modified by increasing the heating condition. Such a soldering property is affected by a various factors of which the soldered joint, flux and bus bar of the cell are changed on the heating condition. Therefore, we tried to reveal causes determining the soldering property through analyzing the soldered interface.

Mitigation of Potential-Induced Degradation (PID) for PERC Solar Cells Using SiO2 Structure of ARC Layer (반사방지막(ARC)의 SiO2 구조에 따른 PERC 태양전지 PID 열화 완화 상관관계 연구)

  • Oh, Kyoung Suk;Park, Ji Won;Chan, Sung Il
    • Current Photovoltaic Research
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    • v.8 no.4
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    • pp.114-119
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    • 2020
  • In this study, Mitigation of Potential-induced degradation (PID) for PERC solar cells using SiO2 Structure of ARC layer. The conventional PID test was conducted with a cell-level test based on the IEC-62804 test standard, but a copper PID test device was manufactured to increase the PID detection rate. The accelerated aging test was conducted by maintaining 96 hours with a potential difference of 1000 V at a temperature of 60℃. As a result, the PERC solar cell of SiO2-Free ARC structure decreased 22.11% compared to the initial efficiency, and the PERC solar cell of the Upper-SiO2 ARC structure decreased 30.78% of the initial efficiency and the PID reliability was not good. However, the PERC solar cell with the lower-SiO2 ARC structure reduced only 2.44%, effectively mitigating the degradation of PID. Na+ ions in the cover glass generate PID on the surface of the PERC solar cell. In order to prevent PID, the structure of SiNx and SiO2 thin films of the ARC layer is important. SiO2 thin film must be deposited on bottom of ARC layer and the surface of the PERC solar cell N-type emitter to prevent surface recombination and stacking fault defects of the PERC solar cell and mitigated PID degradation.

PID Recovery Characteristics of Photovoltaic Modules in Various Environmental Conditions (다양한 환경조건에서 태양전지모듈의 PID회복특성)

  • Lee, Eun-Suk;Jung, Tea-Hee;Go, Seok-Hwan;Ju, Young-Chul;Chang, Hyo Sik;Kang, Gi-Hwan
    • Journal of the Korean Solar Energy Society
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    • v.35 no.5
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    • pp.57-65
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    • 2015
  • The Potential Induced Degradation(PID) in PV module mainly affected by various performance conditions such as a potential difference between solar cell and frame, ambient temperature and relative humidity. The positive charges as sodium ions in front glass reach solar cell in module by a potential difference and are accumulated in the solar cell. The ions accelerate the recombination of generation electrons within solar cell under illumination, which reduces the entire output of module. Recently, it was generally known that PID generation is suppressed by controlling the thickness of SiNx AR coating layer on solar cell or using Sodium-free glass and high resistivity encapsulant. However, recovery effects for module with PID are required, because those methods permanently prevent generating PID of module. PID recovery method that voltage reversely applies between solar cell and frame contract to PID generation begins to receive attention. In this paper, PID recovery tests by using voltage under various outdoor conditions as humidity, temperature, voltage are conducted to effectively mitigate PID in module. We confirm that this recovery method perfectly eliminates PID of solar cell according to repeative PID generation and recovery as well as the applied voltage of three factors mainly affect PID recovery.

Current Status of Emitter Wrap-Through c-Si Solar Cell Development (에미터 랩쓰루 실리콘 태양전지 개발)

  • Cho, Jaeeock;Yang, Byungki;Lee, Honggu;Hyun, Deochwan;Jung, Woowon;Lee, Daejong;Hong, Keunkee;Lee, Seong-Eun;Hong, Jeongeui
    • Current Photovoltaic Research
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    • v.1 no.1
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    • pp.17-26
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    • 2013
  • In contrast to conventional crystalline cells, back-contact solar cells feature high efficiencies, simpler module assembly, and better aesthetics. The highest commercialized cell and module efficiency was recorded by n-type back-contact solar cells. However, the mainstream PV industry uses a p-type substrate instead of n-type due to the high costs and complexity of the manufacturing processes in the case of the latter. P-type back-contact solar cells such as metal wrap-through and emitter wrap-through, which are inexpensive and compatible with the current PV industry, have consequently been developed. In this paper the characteristics of EWT (emitter wrap-through) solar cells and their status and prospects for development are discussed.

응력 주입 층을 이용한 Kerf-less 웨이퍼링 기술 동향

  • Yang, Hyeon-Seok;Eom, Nu-Si-A;Kim, Ji-Won;Im, Jae-Hong
    • Ceramist
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    • v.21 no.2
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    • pp.75-82
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    • 2018
  • In the photovoltaics (PV) industry, there were many efforts to reduce the cost of production with high efficiency. The single most important cost factor in silicon technology is the wafer, accounting presently for ~35% of the module cost. it was already shown that the solar cell efficiency can be maintained up to the thickness range of $40-60{\mu}m$. The direct production of ultra-thin silicon wafer is very attractive and numerous different techniques, such as electrochemical process, ion implantation, and epitaxial growth, have been proposed and developed in many academic and industrial laboratories.

A Study on Ultra Precision Grinding of Silicon Carbide Molding Core for High Pixel Camera Phone Module (고화소 카메라폰 모듈을 위한 Glass 렌즈 성형용 Silicon Carbide 코어의 초정밀 가공에 관한 연구)

  • Kim, Hyun-Uk;Kim, Jeong-Ho;Ohmori, Hitoshi;Kwak, Tae-Soo;Jeong, Shang-Hwa
    • Journal of the Korean Society for Precision Engineering
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    • v.27 no.7
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    • pp.117-122
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    • 2010
  • Recently, aspheric glass lens molding core is fabricated with tungsten carbide(WC). If molding core is fabricated with silicon carbide(SiC), SiC coating process, which must be carried out before the Diamond-Like Carbon(DLC) coating can be eliminated and thus, manufacturing time and cost can be reduced. Diamond Like Carbon(DLC) is being researched in various fields because of its high hardness, high elasticity, high durability, and chemical stability and is used extensively in several industrial fields. Especially, the DLC coating of the molding core surface used in the fabrication of a glass lens is an important technical field, which affects the improvement of the demolding performance between the lens and molding core during the molding process and the molding core lifetime. Because SiC is a material of high hardness and high brittleness, it can crack or chip during grinding. It is, however, widely used in many fields because of its superior mechanical properties. In this paper, the grinding condition for silicon carbide(SiC) was developed under the grinding condition of tungsten carbide. A silicon carbide molding core was fabricated under this grinding condition. The measurement results of the SiC molding core were as follows: PV of 0.155 ${\mu}m$(apheric surface) and 0.094 ${\mu}m$(plane surface), Ra of 5.3 nm(aspheric surface) and 5.5 nm(plane surface).

Analysis and comparison of initial performance degradation for single crystalline silicon solar cell under open and short circuit (단결정 태양전지의 단락 및 개방 시 노광에 의한 초기 출력저하 비교 분석)

  • Jung, Tae-Hee;Kim, Tae-Bum;Shin, Jun-Oh;Yoon, Na-Ri;Woo, Sung-Cheol;Kang, Gi-Hwan;Ahn, Hyung-Keun;Han, Deuk-Young
    • Journal of the Korean Solar Energy Society
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    • v.30 no.6
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    • pp.16-21
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    • 2010
  • It is well-known that Boron-doped Cz Si solar cells suffer light-induced degradation due to boron-oxygen defect which is responsible of a reduction in lifetime and hence efficiency. In this paper, we assume that PV solar cell has been connected with variable load to account the real operating condition and it shows different light-induced degradation of Si solar cell. To evaluate the effect of light-induced degradation for solar cell with various load, Single crystalline solar cells are connected with open and short circuits during light exposure. Isc-Voc curve evaluate light induced degradation of solar cells and the reason is explained as a change for serial resistance. From the results, Electrical characteristics of solar cells show better performance under short circuit conditions, after light exposure.