• Journal of the Korean Applied Science and Technology
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• v.16 no.1
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• pp.33-40
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• 1999

We used Cu as a representative of metals to be directly adsorbed on the bare Si surface and studied its removal DHF, DHF-$H_2O_2$ and BHF solution. It has been found that Cu ion in DHF adheres on every Si wafer surface that we used in our study (n, p, n+, p+) especially on the n+-Si surface. The DHF-$H_2O_2$ solution is found to be effective in removing metals featuring high electronegativity such as Cu from the p-Si and n-Si wafers. Even when the DHF-$H_2O_2$ solution has Cu ions at the concentration of 1ppm, the solution is found effective in cleaning the wafer. In the case the n+-Si and p+-Si wafers, however, their surfaces get contaminated with Cu When Cu ion of 10ppb remains in the DHF-$H_2O_2$ solution. When BHF is used, Cu in BHF is more likely to contaminate the n+-Si wafer. It is also revealed that the surfactant added to BHF improve wettability onto p-Si, n-Si and p+-Si wafer surface. This effect of the surfactant, however, is not observed on the n+-Si wafer and is increased when it is immersed in the DHF-$H_2O_2$ solution for 10min. The rate of the metallic contamination on the n+-Si wafer is found to be much higher than on the other Si wafers. In order to suppress the metallic contamination on every type of Si surface below 1010atoms/cm2, the metallic concentration in ultra pure water and high-purity DHF which is employed at the final stage of the cleaning process must be lowered below the part per trillion level. The DHF-$H_2O_2$ solution, however, degrades surface roughness on the substrate with the n+ and p+ surfaces. In order to remove metallic impurities on these surfaces, there is no choice at present but to use the $NH_4OH-H_2O_2-H_2O$ and $HCl-H_2O_2-H_2O$ cleaning.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.120-120
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• 2008

We demonstrate epitaxial growth of ZnO thin films on 4H-SiC(0001) substrates using pulsed laser deposition (PLD). ZnO and SiC have attracted attention for their special material properties as wide band gap semiconductors. Especially, ZnO could be applied to optoelectronic applications such as light emitting devices and photo detectors due to its direct wide bandgap (Eg) of ~3.37eV and large exciton binding energy of ~60meV. SiC shows a good lattice matching to ZnO compared with other commonly used substrates and in this regard SiC is a good candidate as a substrate for ZnO. In this work, ZnO thin films were grown on 4H-SiC(0001) substrates by PLD using an Nd:YAG laser with a 355nm wavelength. The crystalline properties of the films were evaluated by x-ray diffraction (XRD) $\theta-2\theta$, rocking curve and pole figure measurements using a high-resolution diffractometer. The surface morphology of the films was studied by atomic force microscopy (AFM).

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.7
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• pp.293-297
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• 2003

Silicon dioxide (SiO$_2$) layers were fabricated on Si$_3$N$_4$/SiO$_2$/Si layer structures by low pressure chemical vapor deposition (LPCVD). Potassium and aluminum were then coimplanted by implanting potassium ions with the energy of 100 ［keY］ and dose of 5x10$^{16}$ [cm￣$^2$］ and 1x10$^{17}$ [cm￣$^2$］ into an aluminum buffer layer on the SiO$_2$Si$_3$N4/SiO$_2$/Si structure. The pH, pNa, and pK ion sensitivities of the resulting layers were investigated and compared to those of as-deposited silicon dioxide layer. The pK-sensitivity of the silicon dioxide was enhanced by the K and Al coimplantation. On the contrary, the pH and pNa-sensitivities of the coimplanted silicon dioxides were quite lower than that of the as-deposited silicon dioxide.

• Journal of the Speleological Society of Korea
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• v.14 no.15
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• pp.42-90
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• 1987

Lee, Moon Won reported by 63 kinds lescribing the petrography and bulk chemical Composition in Petrology of Cheju volcanic island. The total Chemical Composition data was analyzed by the program of FORTRAN77. First, the Conversition equations and the scatter diagram were examined to the analysis, by the least square method. Next, a statistical data requested a mean Value, maximum value, minimum value, the range, the standard deviation, the variance, the Standord Error and the Coefficient of variation. In the standard deviation, a small Composition is MnO and P$_2$O$\sub$5/, a large Composition is SiO$_2$, Mgo and FeO. The Standard error and the variance were the tandency looked like the Standard deviation well. However, the Coefficient Variation differs from the Standard deviation. Where, a large Coefficient of variation are H$_2$O$\^$-/ and H$_2$O$\^$+/, a small Coefficient of variation are Al$_2$O$_3$ and SiO$_2$. The Correlation of Coefficient Can be Calculated numerically from the relation between SiO$_2$, Al$_2$O$_3$ and TiO$_2$ to other Compositions.

• Journal of the Korean Ceramic Society
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• v.27 no.2
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• pp.219-225
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• 1990

Silicon dioxide thin film has been grown by a chemical vapor deposition (CVD) technique using SiH4, and O2 gaseous mixture on a silicon substrate. The experimental results indicated that the deposition rate as a function of the input ratio (O2/SiH4) shows two regions, increasing region and decreasing region. Also the deposition rate increases with increasing the deposition temperature. The microstructure of deposited silicon dioxide films is amorphous. The experimental results of infrared absorption spectrums indicate that Si-H and Si-OH bond increase with decreasing input ratio, but Si-O bond is independent on the input ratio. The interfacial charge of deposited silicon dioxide decreases with increasing input ratio.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.349-352
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• 2012

ZnO thin films were deposited on a-, c- and m- plane oriented 4H-SiC substrates by pulsed laser deposition. ZnO nanowires were formed on substrates by tube furnace. Shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. Average surface roughness and root mean square surface roughness were measure by atomic force microscope. Optical properties were investigated by Photoluminescence measurement. Density of ZnO nanowires grown on a-, c- and m-plane oriented 4H-SiC substrates were 17.89 ${\mu}m^{-2}$, 9.98 ${\mu}m^{-2}$ and 2.61 ${\mu}m^{-2}$, respectively.

• Korean Chemical Engineering Research
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• v.59 no.2
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• pp.281-295
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• 2021

In this study, the direct amination of ethanol was performed over impregnated Ni on SiO2-Al2O3 mixed oxide catalysts prepared by varying Si/(Si + Al) molar ratio to 30 mol%. To characterize the physico-chemical properties of the catalysts used, X-ray diffraction (XRD), N2-physisorption, temperature-programmed desorption of iso-propyl alcohol (IPA-TPD), temperature-programmed desorption of ethanol (EtOH-TPD), temperature-programmed reduction with H2 (H2-TPR), H2-chemisorption and transmission electron microscopy (TEM) were used. The acidic property was continuously increased until Si/(Si + Al) = 30 mol% in SiO2-Al2O3 mixed oxides used. The dispersion of Ni metal and surface area, acid characteristics of the supported Ni catalyst have a complex effect on the catalytic reaction activity. The low reduction temperature of nickel oxide and acidic properties were beneficial to the formation of acetonitrile. In terms of conversion of ethanol, Ni/SiO2-Al2O3 catalyst with a molar ratio of 10 mol% Si/(Si+Al) showed the highest activity and a volcanic curve based on it. The tendency of results were consistent in the metal dispersion and catalytic activity.

• Journal of Powder Materials
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• v.28 no.1
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• pp.51-58
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• 2021

The conversion of carbon preforms to dense SiC by liquid infiltration is a prospectively low-cost and reliable method of forming SiC-Si composites with complex shapes and high densities. Si powder was coated on top of a 2.0wt.% Y2O3-added carbon preform, and reaction bonded silicon carbide (RBSC) was prepared by infiltrating molten Si at 1,450℃ for 1-8 h. Reactive sintering of the Y2O3-free carbon preform caused Si to be pushed to one side, thereby forming cracking defects. However, when prepared from the Y2O3-added carbon preform, a SiC-Si composite in which Si is homogeneously distributed in the SiC matrix without cracking can be produced. Using the Si + C → SiC reaction at 1,450℃, 3C and 6H SiC phases, crystalline Si, and Y2O3 were generated based on XRD analysis, without the appearance of graphite. The RBSC prepared from the Y2O3-added carbon preform was densified by increasing the density and decreasing the porosity as the holding time increased at 1,450℃. Dense RBSC, which was reaction sintered at 1,450℃ for 4 h from the 2.0wt.% Y2O3-added carbon preform, had an apparent porosity of 0.11% and a relative density of 96.8%.

• The Bulletin of The Korean Astronomical Society
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• v.38 no.2
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• pp.77.2-77.2
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• 2013

We present the interim results of simultaneous time monitoring observations of $^{28}SiO$ v = 1, 2, J = 1-0, $^{29}SiO$ v = 0, J = 1-0 and $H_2O$ $6_{16}-5_{23}$ maser lines toward 10 known water fountain sources at a post-AGB stage. The observations have been carried out from 2009 June to 2013 September using the 21m single dish radio telescopes of the Korean VLBI Network. From six sources, we detected well separated red- and blue-shifted $H_2O$ maser features with large velocity ranges more than 100 km $s^{-1}$. From four sources, we detected red- and/or blue-shifted $H_2O$ maser features depended on observational epochs. However, we could not detected SiO maser emission from any sources and any epochs. For a representative water fountain source W43A, we obtained $H_2O$ maser spectra at 17 epochs which show a clear bipolar and discontinuous mass ejections. They also showed a periodic change between red-shifted and blue-shifted peaks. However, we need a more regular and short-time interval monitoring observations in order to fix the period and peak intensity variation interval.

• Nuclear Engineering and Technology
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• v.33 no.4
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• pp.386-396
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• 2001

Mixtures Of AUC-UO$_2$and Gd$_2$O$_3$ Powders doped With Cr$_2$O$_3$ or Cr$_2$O$_3$-SiO$_2$ were Pressed and sintered at 1730 t in hydrogen gas witk various water-vapor contents. The density of UO$_2$- 6wt% Gd$_2$O$_3$ pellets can be increased from 91% TD to 94.5% TD in 1 vol% $H_2O$-H$_2$ gases by the addition of 0.02wt% Cr$_2$O$_3$-(0.01~0.04) wt% SiO$_2$. The magnitude of density increase is much larger in (1~3 vol%) $H_2O$-H$_2$ gases than in 0.05 vol% $H_2O$-H$_2$ gas. The densification of U0$_2$- Gd$_2$O$_3$ compact is significantly delayed in the temperature range between 1300 and 1500 t , but that of compacts with Cr$_2$O$_3$-SiO$_2$ is not. The role of Cr$_2$O$_3$ and SiO$_2$ in densification is discussed.