• 청정기술
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• 제22권4호
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• pp.308-315
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• 2016

수명특성이 우수한 실리콘 음극재를 제조하기 위해 졸겔법을 통해 $SiO_x/ZnO$ 복합체를 제조하였고, 제조된 복합체는 PVC를 탄소 전구체로 하여 탄소를 피복하였다. 복합체에 포함된 ZnO를 HCl로 제거하여 내부에 빈 공간을 만들어 충 방전에 따른 실리콘의 부피변화를 완화할 수 있게 하였다. 합성된 복합체의 결정구조와 형상을 파악하기 위해 XRD, SEM, TEM 분석을 실시하였다. 탄소 피복된 복합체에 포함된 탄소함량을 TGA를 통해 알아보았으며, 복합체의 기공구조를 확인하기 위해 BET 비표면적 분석과 BJH 기공분포를 확인하였다. 탄소의 추가로 향상된 전기전도성을 측정하였으며, 전기화학적 특성은 AC 임피던스 측정과 충 방전 및 수명특성을 확인하였다. $SiO_x/ZnO$시료에 탄소를 피복할 경우에 전기전도도가 증가하였으며, 방전용량도 증가하였다. 염산으로 ZnO를 제거한 시료의 경우에 표면적은 증가하였으나, 전지의 방전용량은 오히려 감소하였다. 탄소를 피복하지 않은 $SiO_x/ZnO$ 시료의 경우에 방전용량이 매우 낮았으며, 탄소를 피복한 후의 시료는 높은 충방전용량을 나타내었다. 수명특성의 경우, $C-SiO_x/ZnO$ 복합체(Zn : Si : C = 1 : 1 : 8)가 0.2 C의 전류량에서 50 사이클에서 $815mAh\;g^{-1}$의 용량으로 기존 흑연계 음극재보다 높은 용량을 나타내었다.

• 한국결정성장학회지
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• 제16권1호
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• pp.12-19
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• 2006

Metalorganic chemical vapor deposition (MOCYD) techniques have been applied to fabricate semiconducting ZnO thin films and nanostructures, which are promising for novel optoelectronic device applications using their unique multifunctional properties. The growth and characterization of ZnO thin films on Si and $SiO_2$ substrates by MOCYD as fundamental study to realize ZnO nanostructures was carried out. The precise control of initial nucleation processes was found to be a key issue for realizing high quality epitaxial layers on the substrates. In addition, fabrication and characterization of ZnO nanodots with low-dimensional characteristics have been investigated to establish nanostructure blocks for ZnO-based nanoscale device application. Systematic realization of self- and artificially-controlled ZnO nanodots on $SiO_2/Si$ substrates was proposed and successfully demonstrated utilizing MOCYD in addition with a focused ion beam technique.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1277-1279
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• 1994

In the structure of ZnO/nip-SiC: H/metal substrate amorphous silicon (a-Si:H) solar cells, the effects of inserting a rear textured ZnO in the p-SiC:H/metal interface and a graded bandgap buffer layer in the i/p-SiC:H have been analysed by computer simulation. The incident light was taken to have an intensity of $100mW/cm^2$(AM-1). The thickness of the a-Si:H n, ${\delta}$-doped a-SiC:H p, and buffer layers was assumed to be $200{\AA},\;66{\AA}$, and $80{\AA}$, respectively. The scattering coefficients of the front and back ZnO were taken to be 0.2 and 0.7, respectively. Inserting the rear buffer layer significantly increases the open circuit voltage($V_{oc}$) due to reduction of the i/p interface recombination rate. The use of textured ZnO markedly improves collection efficiency in the long wavelengths( above ${\sim}550nm$ ) by back scattering and light confinement effects, resulting in dramatic enhancement of the short circuit current density($J_{sc}$). By using the rear buffer and textured ZnO, the i-layer thickness of the ceil for obtaining the maximum efficiency becomes thinner(${\sim}2500{\AA}$). From these results, it is concluded that the use of textured ZnO and buffer layer at the backside of the ceil is very effective for enhancing the conversion efficiency and reducing the degradation of a-Si:H pin-type solar cells.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.363-366
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• 2007

[ $Zn_2SiO_4:Mn$ ] green phosphors doped with $NH_4Cl$ and Al for PDP were synthesized by solid state reaction method. The luminescence of 532 nm in $Zn_2SiO_4:Mn$ phosphors was associated with $^4T_1{\to}^6A_1$ transition. Photoluminescence intensity of $Zn_2SiO_4:Mn$ doped with $NH_4Cl$ 15 mol% increased about two times as compared with that of $NH_4Cl$ non-doped sample. The color of the emission of Al-doped $Zn_2SiO_4:Mn$ phosphors changed to yellowish green.

• Corrosion Science and Technology
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• 제11권1호
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• pp.1-8
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• 2012

The development of martensitic grades which can be processed in continuous galvanizing lines requires the reduction of the oxides formed on the steel during the hot dip process. This reduction mechanism was investigated in detail by means of High Resolution Transmission Electron Microscopy (HR-TEM) of cross-sectional samples. Annealing of a martensitic steel in a 10% $H_2+N_2$ atmosphere with the dew point of $-35^{\circ}C$ resulted in the formation of a thin $_{C-X}MnO.SiO_{2}$ (x>1) oxide film and amorphous $_{a-X}MnO.SiO_{2}$ oxide particles on the surface. During the hot dip galvanizing in Zn-0.13%Al, the thin $_{C-X}MnO.SiO_{2}$ (x>1) oxide film was reduced by the Al. The $_{a-X}MnO.SiO_{2}$ (x<0.9) and $a-SiO_{2}$ oxides however remained embedded in the Zn coating close to the steel/coating interface. No $Fe_{2}Al_{5-X}Zn_{X}$ inhibition layer formation was observed. During hot dip galvanizing in Zn-0.20%Al, the $_{C-X}MnO.SiO_{2}$ (x>1) oxide film was also reduced and the amorphous $_{a-X}MnO.SiO_{2}$ and $a-SiO_{2}$ particles were embedded in the $Fe_{2}Al_{5-X}Zn_{X}$ inhibition layer formed at the steel/coating interface during hot dipping. The results clearly show that Al in the liquid Zn bath can reduce the crystalline $_{C-X}MnO.SiO_{2}$ (x>1) oxides but not the amorphous $_{a-X}MnO.SiO_{2}$ (x<0.9) and $a-SiO_{2}$ oxides. These oxides remain embedded in the Zn layer or in the inhibition layer, making it possible to apply a Zn or Zn-alloy coating on martensitic steel by hot dipping. The hot dipping process was also found to deteriorate the mechanical properties, independently of the Zn bath composition.

• 한국재료학회지
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• 제14권8호
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• pp.600-606
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• 2004

$Zn_{2}SiO_{4}:Mn$ phosphor particles were prepared by a flame spray pyrolysis method. It has been generally known that the high-temperature flame enables fast drying and decomposition of droplets. In the present investigation, the morphology and luminescent property of $Zn_{2}SiO_{4}:Mn$ phosphor were controlled in a severe flame preparation condition. The particle formation in the flame spray pyrolysis process was achieved by the droplet-to-particle conversion without any evaporation of precursors, which made it possible to obtain spherical $Zn_{2}SiO_{4}:Mn$ particles of a pure phase from a droplet. Using colloidal solutions wherein dispersed nano-sized silica particles were adopted as a silicon precursor. $Zn_{2}SiO_{4}:Mn$ particles with spherical shape and filled morphology were prepared and the spherical morphology was maintained even after the high-temperature heat treatment, which is necessary to increase the photoluminescence intensity. The $Zn_{2}SiO_{4}:Mn$ particles with spherical shape, which were prepared by the flame spray pyrolysis and posttreated at $1150^{\circ}C$, showed good luminescent characteristics under vacuum ultraviolet (VUV) excitation.

• 전자공학회논문지 IE
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• 제43권4호
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• pp.8-12
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• 2006

본 논문에서는 $SiO_2-ZnO-B_2O_3$ 계 및 $P_2O_5$-ZnO-BaO 계의 반사율과 유전특성을 $TiO_2$의 양에 따라 조사하였다. 반사율은 $TiO_2$ 함량이 증가함에 따랴 감소하였다 여기서 $P_2O_5$-ZnO-BaO계는 $SiO_2-ZnO-B_2O_3$ 계보다 더 낮은 반사율을 나타내었으며, 유전상수는 $P_2O_5$-ZnO-BaO 계가 $SiO_2-ZnO-B_2O_3$ 계보다 높았다. 두 계 모두 유전상수는 $TiO_2$의 양에 따라 증가하는 특성을 보였다. 이 결과는 높은 반사율과 항복특성이 요구되는 PDP디스플레이의 후면 유전층에 적용할 수 있을 것으로 생각된다.

• 환경위생공학
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• 제13권3호
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• pp.58-65
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• 1998

Monodispersed $SiO_2/ZnO$ composite fine powders were prepared by Sol-Gel processing and their surface electrical and UV absorbance properties were investigated. Pseudomorph ZnO fine powders were microcapsuled by $SiO_2/ZnO$ sol fabricated using TEOS[tetraethylorthosilicate, purity 98% and ethanol as a solvent with $NH_3$ catalyst. The effects of experimental parameters such as molar ratio of starting materials on the final particle size and shape of $SiO_2/ZnO$ composite fine powder were discussed. As a result, we could controlled the size of monodispersed $SiO_2/ZnO$ composite fine powders without agglomeration, as well as the good dispersibility in aquous solution. The prepared powders were observed to have the mean particle sizes of $0.26-0.78{\mu}m$ with standard deviations of $0.020-0.063{\mu}m$.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.419-424
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• 2009

ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.

• Korean Chemical Engineering Research
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• 제40권6호
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• pp.752-756
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• 2002

PDP(Plasma Display Panel)용 녹색 형광체인 $Zn_2SiO_4:Mn$ 형광체의 제조에 있어 콜로이드 분무 열분해법을 도입하고, $Zn_2SiO_4$ wellimite 결정의 $Si^{4+}$ 자리를 치환하는 $Gd^{3+}/Li^+$ 부활성제를 첨가하여 형광체의 발광특성을 향상시키고자 하였다. 14 nm 크기의 fumed silica 입자를 규소 전구체로 도입한 콜로이드 분무열분해법에 의해서 제조되어진 $Zn_2SiO_4:Mn$ 입자는 응집이 없는 구형의 형상, 작은 입자 크기 및 좁은 입도 분포를 가졌다. $Gd^{3+}/Li^+$ 함량은 $Zn_2SiO_4:Mn$ 형광체 입자의 발광특성에 영향을 끼쳤으며, 적정한 함량의 $Gd^{3+}/Li^+$ 부활성제를 첨가함으로써 진공 자외선하에서 형광체의 발광휘도를 향상시키고, 잔광시간을 크게 줄일 수 있었다. 분무 열분해법에 의한 $Gd^{3+}/Li^+$이 코도핑된 $Zn_2SiO_4:Mn$ 형광체 입자의 제조에 있어서 후열처리 온도는 형광체의 발광특성을 결정짓는 주요한 인자이다. 0.1 mol%의 $Gd^{3+}/Li^+$ 부활제를 포함하고 $1,145^{\circ}C$ 온도에서 소결된 $Zn_2SiO_4:Mn$ 형광체 입자는 상업용 형광체에 비해 5% 높은 발광 휘도과 5.7 ms의 잔광시간을 가졌다.