• 제목/요약/키워드: a-Si PV

검색결과 91건 처리시간 0.026초

Performance Ratio of Crystalline Si and Triple Junction a-Si Thin Film Photovoltaic Modules for the Application to BIPVs

  • Cha, Hae-Lim;Ko, Jae-Woo;Lim, Jong-Rok;Kim, David-Kwangsoon;Ahn, Hyung-Keun
    • Transactions on Electrical and Electronic Materials
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    • 제18권1호
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    • pp.30-34
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    • 2017
  • The building integrated photovoltaic system (BIPV) attracts attention with regard to the future of the photovoltaic (PV) industry. It is because one of the promising national and civilian projects in the country. Since land area is limited, there is considerable interest in BIPV systems with a variety of angles and shapes of PV panels. It is therefore expected to be one of the major fields for the PV industry in the future. Since the irradiation is different from each installation angle, the output can be predicted by the angles. This is critical for a PV system to be operated at maximum power and use an efficient design. The development characteristics of tilted angles based on data results obtained via long-term monitoring need to be analyzed. The ratio of the theoretically available and actual outputs is compared with the installation angles of each PV module to provide a suitable PV system for the user.

결정질과 비정질 PV모듈의 자연광 스펙트럼에 따른 Isc의 변화 (Transition of Isc according to Natural Solar Spectrum on c-Si and a-Si PV Module)

  • 공지현;지양근;강기환;유권종;안형근;한득영
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2009년도 추계학술발표대회 논문집
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    • pp.86-91
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    • 2009
  • In this paper, we analyze the Transition of Isc by natural solar spectrum of c-Si and a-Si PV module. Commonly, performance of photovoltaic (PV) module is estimated under the standard test condition (STC). That is, solar irradiance $1kW/m^2$, solar spectrum distribution: AM1 5G, module temperature $25^{\circ}C$ This means it rarely meets actual outdoor conditions. The solar spectrum always changes. So it is rare to fit the standard solar spectrum AM1 5G defined in ASTM G173-03 or IEC 60904-3. Thus spectral response of PV module is different depending on the material. so we estimated the variation of Isc at every minutes by comparing c-Si PV module with a-si PV module for outdoor conditions.

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측면입사광에 대한 SiOx 무반사 회절격자 결합 c-Si PV 서브-모듈의 광전변환효율 향상 (Improvement of Solar Conversion Efficiency in a c-Si PV Sub-Module Integrated with SiOx Anti-Reflection Grating for Oblique Optical Irradiation)

  • 심지현;김제하
    • 한국전기전자재료학회논문지
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    • 제30권5호
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    • pp.325-330
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    • 2017
  • We fabricated 1-D and 2-D diffraction gratings of SiOx anti-reflection (AR) film grown on a quartz substrate and integrated them into a c-Si photovoltaic (PV) submodule. The light-trapping effect of the resulting submodules was studied in terms of the oblique optical incident angle, ${\theta}_i$. As the ${\theta}_i$ increased, solar conversion efficiency, ${\eta}$, was improved as expected by the increased optical transmission caused by the grating. For ${\theta}_i{\leq}30^{\circ}$, the relative solar conversion efficiency, ${\Delta}{\eta}$, of a 1-D SiOx (t=300 nm) grating, compared to that of a flat SiOx AR-coated integrated PV submodule, was improved very little, with a small variation of within 2%, but increased markedly for ${\theta}_i{\geq}40^{\circ}$. We observed a change of ${\Delta}{\eta}$ as large as 10.7% and 9.5% for the SiOx grating of period t=800 nm and 1200 nm, respectively. For a 2-D SiOx (t=300 nm) grating integrated PV submodule, however, the optical trapping behavior was similar in terms of ${\theta}_i$ but its variation was small, within ${\pm}1.0%$.

Solar Photovoltaics Technology: No longer an Outlier

  • Kazmerski, Lawrence L.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.70-70
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    • 2011
  • The prospects of current and coming solar-photovoltaic (PV) technologies are envisioned, arguing this solar-electricity source is beyond a tipping point in the complex worldwide energy outlook. Truly, a revolution in both the technological advancements of solar PV and the deployment of this energy technology is underway; PV is no longer an outlier. The birth of modern photovoltaics (PV) traces only to the mid-1950s, with the Bell Telephone Laboratories' development of an efficient, single-crystal Si solar cell. Since then, Si has dominated the technology and the markets, from space through terrestrial applications. Recently, some significant shift toward technology diversity have taken place. Some focus of this presentation will be directed toward PV R&D and technology advances, with indications of the limitations and relative strengths of crystalline (Si and GaAs) and thin-film (a-Si:H, Si, Cu(In,Ga)(Se,S)2, CdTe). Recent advances, contributions, industry growth, and technological pathways for transformational now and near-term technologies (Si and primarily thin films) and status and forecasts for next-generation PV (nanotechnologies and non-conventional and "new-physics" approaches) are evaluated. The need for R&D accelerating the now and imminent (evolutionary) technologies balanced with work in mid-term (disruptive) approaches is highlighted. Moreover, technology progress and ownership for next generation solar PV mandates a balanced investment in research on longer-term (the revolution needs revolutionary approaches to sustain itself) technologies (quantum dots, multi-multijunctions, intermediate-band concepts, nanotubes, bio-inspired, thermophotonics, ${\ldots}$ and solar hydrogen) having high-risk, but extremely high performance and cost returns for our next generations of energy consumers. This presentation provides insights to the reasons for PV technology emergence, how these technologies have to be developed (an appreciation of the history of solar PV)-and where we can expect to be by this mid-21st century.

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태국 열대몬순기후 조건에서 PV모듈 기술별 성능특성 비교 연구 (Comparative Study on Performance of Grid-Connected Photovoltaic Modules in Tropical Monsoon Climate under Thailand condition)

  • 김승덕;고병욱;박진희;천대인
    • 신재생에너지
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    • 제10권3호
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    • pp.39-46
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    • 2014
  • The performances of three different types of photovoltaic (PV) module technologies namely, copper-indium-diselenide (CIGS), mono-crystalline silicon (mo-Si) and amorphous silicon (a-Si) have been comparatively studied in the grid-connected system for more than a year under the tropical monsoon climate of Thailand. The yields, performance ratios and system efficiencies for the respective PV module technologies have been calculated and a comparison is presented here. The performance ratios of the initial operation year for CIGS showed highest among the compared technologies under Thailand climate conditions by marking 97.0% while 89.6% for a-Si and 81.5% for mo-Si. Although mo-Si has shown highest efficiencies all over the period, under the testing conditions, the operating efficiency of mo-Si was down-graded from its reference value mainly due to high operating temperature and the efficiency of the tested CIGS module was also found as high as that of mo-Si in the study. Accordingly, outdoor assessment shows that CIGS modules have demonstrated high performance in terms of yields and performance ratios in Thailand climate conditions.

The effect of thermal anneal on luminescence and photovoltaic characteristics of B doped silicon-rich silicon-nitride thin films on n-type Si substrate

  • Seo, Se-Young;Kim, In-Yong;Hong, Seung-Hui;Kim, Kyung-Joong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.141-141
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    • 2010
  • The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

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See-through 형태의 투광형 태양광 모듈 제조를 위한 직렬접합형 스트랩 제조 기술 (Fabrication of Series Connected c-Si Solar Strap Cells for the See-through Type Photovoltaic Modules)

  • 박민준;윤성민;김민섭;이은비;전기석;정채환
    • Current Photovoltaic Research
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    • 제11권4호
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    • pp.114-117
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    • 2023
  • Transparent Photovoltaic (PV) modules have recently been in the spotlight because they can be applied to buildings and vehicles. However, crystalline silicon (c-Si) solar modules, which account for about 90% of the PV module market, have the disadvantage of applying transparent PV modules due to their unique opacity. Recently, a see-through type PV module using a crystalline silicon solar strap has been developed. However, there is a problem due to a decrease in aesthetics due to the metal ribbon in the center of the see-through type PV module and difficulty bonding the metal ribbon due to the low voltage output of the strap. In this study, to solve this problem, we developed a fabrication process of series connected c-Si solar strap cells using the c-Si solar cells. We succeeded in fabricating a series connected strap with a width of 2-10 mm, and we plan to manufacture an aesthetic see-through type c-Si PV module.

부분 음영에 따른 a-Si Thin Film Photovoltaic(PV) Module의 직렬저항변화 (Series Resistance Change by Partial Shading in a-Si Thin Film Photovoltaic(PV) Module)

  • 신준오;정태희;김태범;우성철;윤나리;강기환;한득영;안형근
    • 한국전기전자재료학회논문지
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    • 제23권11호
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    • pp.901-905
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    • 2010
  • PV module has many power loss factors, and series resistance is the most important elements of them. It is therefore easy to expect the partial shading decrease the lifetime of the semiconductor depletion layer in thin film PV module. Different shading losses could be related with the hot spot which is critical in expecting the reliability issue. In this paper we have modelled the series resistance of the PV module with both different direction of the cell line and shading area of the panel. From the results, thin film a-Si PV module has shown different properties by shading direction.

자연채광용 박막 투광형 BIPV 창호의 발전특성 분석 연구 (Performance characteristics of building-integrated transparent amorphous silicon PV system for a daylighting application)

  • 윤종호;김석기;송종화;이성진
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2007년도 춘계학술대회
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    • pp.280-283
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    • 2007
  • The first grid-connected, building-integrated transparent amorphous silicon photovoltaic installation has been operated since October 2004 in Yongin, Korea. The 2.2kWp transparent PV system was applied to the facade of entrance hall in newly constructed KOLON E&C R&D building. The PV module is a nominal 0.98m ${\times}$ 0.95m, 10% transparent, laminated, amorphous(a-Si) thin-film device rated at 44 Wp per module. To demonstrate the architectural features of thin film PV technologies for daylighting application, transparent PV modules are attached to the building envelope with the form of single glazed window and special point glazing(SPG) frames. Besides power generation, the 10% transmittance of a-Si PV module provides very smooth natural daylight to the entrance hall without any special shading devices for whole year. The installation is fully instrumented and is continuously monitored in order to allow the performance assessment of amorphous silicon PV operating at the prevailing conditions. This paper presents measured power performance data from the first 12 months of operation. For the first year, annual average system specific yield was just 486.4kWh/kWp/year which is almost half of typical amorphous silicon PV output under the best angle and orientation. It should be caused by building orientation and self-shading of adjacent mass. Besides annual power output, various statistical analysis was performed to identify the characteristics of transparent thin film PV system.

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슁글드 디자인 고출력 양면수광형 단결정 실리콘 태양광 모듈 제작 (Fabrication of Shingled Design Bifacial c-Si Photovoltaic Modules)

  • 박민준;김민섭;신진호;변수빈;정채환
    • Current Photovoltaic Research
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    • 제10권1호
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    • pp.1-5
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    • 2022
  • Bifacial photovoltaic (PV) technology has received considerable attention in recent years due to the potential to achieve a higher annual energy yield compared to its monofacial PV systems. In this study, we fabricated the bifacial c-Si PV module with a shingled design using the conventional patterned bifacial solar cells. The shingled design PV module has recently attracted attention as a high-power module. Compared to the conventional module, it can have a much more active area due to the busbar-free structure. We employed the transparent backsheet for a light reception at the rear side of the PV module. Finally, we achieved a conversion power of 453.9 W for a 1300 mm × 2000 mm area. Moreover, we perform reliability tests to verify the durability of our Shingled Design Bifacial c-Si Photovoltaic module.