• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1514-1516
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• 1999

This paper covers our efforts to improve the low carrier mobility and light instability of hydrogenated amorphous silicon (a-Si:H) films with microcrystalline silicon $({\mu}c-Si)$ films. We successfully prepared ${\mu}c-Si$ films on $CaF_2$/glass substrate by decomposition of $SiH_4$ in RPCVD system. The $CaF_2$ films on glass served as a seed layer for ${\mu}c-Si$ film growth. The XRD analysis on $CaF_2$/glass illustrated a (111) preferred $CaF_2$ grains with the lattice mismatch less than 5 % of Si. We achieved ${\mu}c-Si$ films with a crystalline volume fraction of 61 %, (111) and (220) crystal orientations. grain size of $706\AA$, activation energy of 0.49 eV, and Photo/dark conductivity ratio of 124. By using a $CaF_2$/glass structure. we were able to achieve an improved ${\mu}c-Si$ films at a low substrate temperature of $300^{\circ}C$.

• 한국표면공학회지
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• 제34권5호
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• pp.503-509
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• 2001

Thin films of hydrogenated amorphous silicon (a-Si : H) and hydrogenated amorphous silicon carbide (a-SiC:H) of different compositions were deposited on Si(100) wafer and glass by RF plasma-enhanced chemical vapor deposition (RF-PECVD). In the present work, we have investigated the effects of the RF power on the properties, such as optical band gap, transmittance and crystallinity. The Raman data show that the a-Si:H material consists of an amorphous and crystalline phase for the co-presence of two peaks centered at 480 and $520 cm^{-1}$ . The UV-VIS data suggested that the optical energy band gap ($E_{g}$ ) is not changed effectively with RF power and the obtained $E_{g}$(1.80eV) of the $\mu$c-Si:H thin film has almost the same value of a-Si:H thin film (1.75eV), indicating that the crystallity of hydrogenated amorphous silicon thin film can mainly not affected to their optical properties. However, the experimental results have shown that$ E_{g}$ of the a-SiC:H thin films changed little on the annealing temperature while $E_{g}$ increased with the RF power. The Raman spectrum of the a-SiC:H thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.181-181
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• 2016

Hydrogenated microcrystalline silicon (${\mu}c-Si:H$) films have attracted much attention as materials of the bottom-cells in Si thin film tandem photovoltaics due to their low bandgap and excellent stability against light soaking. However, in PECVD, the source gas $SiH_4$ must be highly diluted by $H_2$, which eventually results in low deposition rate. Moreover, it is known that high-rate ${\mu}c-Si:H$ growth is usually accompanied by a large number of dangling-bond (DB) defects in the resulting films, which act as recombination centers for photoexcited carriers, leading to a deterioration in the device performance. During film deposition, Si nanoparticles generated in $SiH_4$ discharges can be incorporated into films, and such incorporation may have effects on film properties depending on the size, structure, and volume fraction of nanoparticles incorporated into films. Here we report experimental results on the effects of nonoparticles incorporation at the different substrate temperature studied using a multi-hollow discharge plasma CVD method in which such incorporation can be significantly suppressed in upstream region by setting the gas flow velocity high enough to drive nanoparticles toward the downstream region. All experiments were performed with the multi-hollow discharge plasma CVD reactor at RT, 100, and $250^{\circ}C$, respectively. The gas flow rate ratio of $SiH_4$ to $H_2$ was 0.997. The total gas pressure P was kept at 2 Torr. The discharge frequency and power were 60 MHz, 180 W, respectively. Crystallinity Xc of resulting films was evaluated using Raman spectra. The defect densities of the films were measured with electron spin resonance (ESR). The defect density of fims deposited in the downstream region (with nonoparticles) is higher defect density than that in the upstream region (without nanoparticles) at low substrate temperature of RT and $100^{\circ}C$. This result indicates that nanoparticle incorporation can change considerably their film properties depending on the substrate temperature.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.199-203
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• 1998

$Pb(Zr, Ti)O_3$ (Pb:Zr:Ti=1:0.52:0.48) thin films were prepared on single crystal MgO(100) substrates by dipping-pyrolysis process using a solution of constituent metal naphthenates as starting materials. The solution was spin-coated onto substrate and the precursor films were pyrolyzed at $200^{\circ}C$ in air or at $200^{\circ}C$ in argon for 1, 2, 5 and 24h, followed by final heat treatment at $750^{\circ}C$. For all the films, highly (h00)/(00l)-oriented Pb$Pb(Zr, Ti)O_3$ thin films with smooth surfaces and crack-free were obtained, whereas thin film pyrolyzed in air for 24 h exhibited polycrystalline character. According to the pole-figure analysis, epitaxy of the product films was found to depend on pyrolysis atmosphere.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.285-303
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• 1999

Thin films of hydrogenated amorphous silicon carbide compounds (a-SixC1x:H) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane(SiH4) and methane(CH4) as the gas precursors at 1 Torr and at low substrate temperature (25$0^{\circ}C$). The gas flow rate was changed with every other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of a-SixC1x:H films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.165-165
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• 2010

AZO:H films were prepared by RF magnetron sputtering system with a AZO (2wt% $Al_2O_3$) ceramic target at a temperature of $150^{\circ}C$. The annealing treatments were carried out in hydrogen ambient for 1hr at a temperature of $400^{\circ}C$. The AZO:H films were etched with 1 % HCl. The influence of the properties of AZO:H films deposited in various working pressures is investigated. As a result, the AZO:H film deposited in 4mTorr showed excellent electrical property of $\rho=5.036{\times}10^{-4}{\Omega}cm$ and strongly oriented (002) peak. The transmittance in the wavelength of 450nm was above 80%. It can be used as front electrode for increasing efficiency of GaN LED.

• Journal of Korean Vacuum Science & Technology
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• 제4권3호
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• pp.86-90
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• 2000

ZnO : Al films were prepared through the optimization process of aluminum content and substrate temperature in rf-magnetron sputtering. When hydrogenation was performed on these films using a hot filament method, all films showed improvement in conductivity although more conductive film showed less improvement. When the substrate temperature ($T_H$) was varied from $25^{\circ}C\;to\;300^{\circ}C$ during hydrogenation, the resistivity was reduced more at higher $T_H$ (more than 30% at $T_H=300^{\circ}C$) Thus, two methods were developed to suppress the dehydrogenation in ZnO : Al films : (1) capping with amorphous silicon thin film as a diffusion barrier, and (2) cooling during hydrogenation.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2001년도 춘계학술발표회 초록집
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• pp.72-72
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• 2001

Plasma polymerized thin films have been deposited on Si(lOO) substrates at $25-400^{\circ}C$ using thiophene ($C_4H_4S$) precursor by plasma assisted chemical vapor deposition (PACVD) method for low-dielectric device application. In order to compare physical properties of the as-grown thin films, the effects of the plasma power, gas flow ratio and deposition temperature on the dielectric constant and thermal stability were mainly studied. XRD and TED studies revealed that the as-grown thin films have highly oriented amorphous polymer structure. XPS data showed that the polymerized thin films that grown under different RF power and deposition temperature as well as different gas ratio of $Ar:H_2$ have different stoichiometric ratio of C and S compared with that of monomer, indicating a formation of mixture polymers. Moreover, we also realized that oxygen free and thermally stable polymer thin films could be grown at even $400^{\circ}C$. The results of SEM, AFM and TEM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current were obtained to be about 3.22 and $10-11{\;}A/\textrm{cm}^2$, respectively.

• 한국진공학회지
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• 제7권4호
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• pp.368-373
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• 1998

초고집적 회로의 미세화에 따라 다층배선에서 기생저항(parasitic resistance)과 정전 용량의 증가는 RC시정수(time constant)의 증가로 인하여 소자의 동작속도를 제한하고 있 다. 이로 인하여 발생되는 배선지연의 문제를 해결하기 위하여 매우 낮은 유전상수를 갖는 층간 절연물질이 필요하다. 이러한 저유전상수 층간절연물질로서 현재 유기계 물질중의 하 나인 a-C:F이 주목받고 있는 물질이다. 본 연구에서는 ECRCVD를 이용하여 a-C:F박막과 Si기판사이의 밀착력을 향상시키기 위하여 a-C:H박막을 500$\AA$증착한 후 a-C:F을 증착전력 500W에서 원료가스의 유량비($C_2F_6, CH_4/(C_2F_6+CH_4)$))를 0~1.0까지 변화시키면서 상온에서 증착하 였다. a-C:F박막의 특성은 SEM, FT0IR, XPS, C-V meter와 AFM등을 이용하여 두께, 결 합상태, 유전상수, 표면형상 및 표면 거칠기를 관찰하였다. a-C:F박막에서 불소함량은 가스 유량비가 1.0일 경우에는 최대 약31at.%정도 검출되었으며, 가스 유량비가 증가됨에 따라 증 가하였다. 또한 유전상수는 a-C:H의 유전상수 $\varepsilon$=3.8에서 $\varepsilon$=2.35까지 감소하였다. 이는 영 구 쌍극자 모멘트가 1.5인 C-H결합은 감소하고 영구 쌍극자 모멘트가 0.6, 0.5인 CF, CF2결 합이 증가하였기 때문이다. 하지만 $400^{\circ}C$에서 질소분위기로 1시간 동안 furnace열처리 후에 가스유량비가 1.0인 a-C:F박막에서 불소의 함량이 감소하여 C-F결합이 줄어들었다. 이로 인하여 유전상수가 열처리전의 2.7에서 열처리후 3.2까지 상승하였다.

• 한국초전도ㆍ저온공학회논문지
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• 제19권3호
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• pp.13-17
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• 2017

We investigated the effect of self-assembled BSO nano-defects as pinning centers in BSO-added GdBCO films when the thicknesses of films were varied. 3.5 vol. % BSO-added GdBCO films with varying thicknesses from 200 nm to 1000 nm were deposited on $SrTiO_3$ (STO) substrate by using pulsed laser deposition (PLD) process. For the films with thicknesses of 400 nm and 600 nm, 'anomaly shoulders' in $J_c-H$ characteristic curves were observed near the matching field. The anomaly shoulders appeared in the field dependence of $J_c$ may be attributed to the existence of double pinning mechanisms in thin films. The fit to the pinning force density as a function of reduced field h ($H/H_{irr}$) using the Dew-Hughes' scaling law shows that both the 400 nm- and the 600 nm-thick films have double pinning mechanisms while the other films have a single pinning mechanism. These results indicate that the self-assembled property of BSO result in different role as pinning centers with different thickness.