• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.816-818
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• 1998

In this paper Polyimide(PI) thin film are fabricated by vapor deposition polymerization(VDP) of dry process which are easy to control the film's thickness and hard to pollute due to volatile solvent. The FT-IR spectrum show that PAA thin films fabricated by VDP are changed to PI thin film by thermal curing. From AFM(Atomic Force Microscopy) experimental as the higher curing temperature. the thin film thickness decreases and roughness decresse.

• 열처리공학회지
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• 제31권4호
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• pp.187-193
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• 2018

In this study, the electrical conductivity, transmittance and gas barrier properties of diamond-like carbon (DLC) thin films were studied. DLC is an insulator, and has transmittance and oxygen gas barrier properties varying depending on the thickness of the thin film. Recently, many researchers have been trying to apply DLC properties to specific industrial conditions. The DLC thin films were deposited by PECVD (Plasma Enhanced Chemical Vapor Deposition) process. The doping gas was used for the DLC film to have electrical conductivity, and the optimum conditions of transmittance and gas barrier properties were established by adjusting the gas ratio and DLC thickness. In order to improve the electrical conductivity of the DLC thin film, $N_2$ doping gas was used for $CH_4$ or $C_2H_2$ gas. Then, a heat treatment process was performed for 30 minutes in a box furnace set at $200^{\circ}C$. The lowest sheet resistance value of the DLC film was found to be $18.11k{\Omega}/cm^2$. On the other hand, the maximum transmittance of the DLC film deposited on the PET substrate was 98.8%, and the minimum oxygen transmission rate (OTR) of the DLC film of $C_2H_2$ gas was 0.83.

• 한국자기학회지
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• 제10권5호
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• pp.237-245
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• 2000

SmFe$_2$에 해당되는 조성을 가진 비정질 합금 박막에 대하여 자기적 및 자기변형 성질이 B함량 (최대 약 10at.%) 및 열처리에 의해 변화하는 거동을 조사하였다. 묘의 첨가에 의해 낮은 자기장에서의 자기변형은 증가하였으나, 포화 자기 변형은 감소하는 경향을 보였다. B을 첨가하지 않은 박막과 B을 9.9 at.% 첨가한 박막을 예로 들면, 30 Oe의 자기장에서 자기변형은 190 ppm에서 333 ppm으로 1.6배 정도 증가하였으나, 5 kOe의 자기변형은 50 % 이상 감소되었다. 이러한 자기변형 결과는 B의 첨가에 의해 포화 자화와 같은 고유 자기적 성질은 열화되었으나, 보자력은 향상(감소)된 것에 주로 기인하는 것으로 생각된다. 자기변형 성질은 열처리에 의해 향상되었는데, 최적의 열처리 온도는 300~40$0^{\circ}C$이다. 열처리에 의한 이러한 특성 향상은 당초 기대했던 미세한 결정 상 SmFe$_2$상의 석출에 의한 것이 아니라, 응력 완화에 의한 보자력의 감소가 주된 원인으로 생각된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.332-335
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• 2004

Boron Phosphide films were deposited on(III) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 20 ml/min for $B_2H_6$, 60 ml/min for $PH_3$ ml/min and $1{\ell}/min$ for $N_2$. The films were annealed for 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is each $10.108{\AA}$ and $29.626{\AA}$. So, we could know every commonplace thing. The measurement of XRD shows that the films have the preferred orientation of(1 0 1). From SEM images, we could see that Boron Phosphide is showed of a structure, which is grain size, which is grain boundary size. Also, the measurement of AES is shown the films have $B_{13}P_2$ Stoichiometry. From WDX See that ingredient is detected each Boron and Phosporus. So, we could see that deposited BP thin film. In this study, we obtained the BP thin film by deposited in atmosphere pressure, and known to applicate as microwave absorbtion material of BP thin film.

• Macromolecular Research
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• 제16권2호
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• pp.103-107
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• 2008

Carbon nanodots were prepared by the pyrolysis of a triblock copolymer. The triblock copolymer, poly(methyl methacrylate)-b-polystyrene-b-poly(methyl methacrylate) was synthesized by atom transfer radical polymerization using an initiator containing a diacetylene group. A polymer thin film on a mica substrate was prepared by spin-casting at 2,000 rpm from a 0.5 wt% toluene solution of the triblock copolymer. After drying, the cast film was vacuum-annealed for 48 h at $160^{\circ}C$. The annealed film formed a spherical morphology of polystyrene domains with a diameter of approximately 30 nm. The film was exposed to UV irradiation to induce a cross-linking reaction between diacetylene groups. In the subsequent pyrolysis at $800^{\circ}C$, the cross-linked polystyrene spheres were carbonized and the poly(methyl methacrylate) matrix was eliminated, resulting in carbon nanodots deposited on a substrate with a diameter of approximately 5 mn.

• 한국초전도ㆍ저온공학회논문지
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• 제16권2호
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• pp.20-23
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• 2014

We have grown $MgB_2$ on SiC buffer layer by using metallic Hastelloy tape as the substrate. Hastelloy tape was chosen for its potential practical applications, mainly in the power cable industry. SiC buffer layers were deposited on Hastelloy tapes at 400, 500, and $600^{\circ}C$ by using a pulsed laser deposition method, and then by using a hybrid physical-chemical vapor deposition technique, $MgB_2$ films were grown on the three different SiC buffer layers. An enhancement of critical current density values were noticed in the $MgB_2$ films on SiC/Hastelloy deposited at 500 and $600^{\circ}C$. From the surface analysis, smaller and denser grains of $MgB_2$ tapes are likely to cause this enhancement. This result infers that the addition of SiC buffer layers may contribute to the improvement of superconducting properties of $MgB_2$ tapes.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1820-1822
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• 2004

In this study, major research fields are classified as ozone generation system for dry cleaning wafer of etched silicon wafer, dry cleaning process of etched silicon wafer which includes SEM analysis and ESCA analysis. The following results are deduced from each experiment and analysis. The magnitudes of carbon and silicon were similar to the survey spectrum of silicon wafer which does not cleaning, but magnitude of oxygen was much bigger Because UV light activates oxygen molecules in the oxide film on the silicon wafer.

• 한국식생활문화학회지
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• 제8권3호
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• pp.249-255
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• 1993

고추장을 직립성 용기에 담아 숙성보관시 곱이 발생하는 것을 방지하기 위하여 햇빛을 쪼여 표면을 관리하는 것이 일반적이나 이 경우 표면층 고추장이 건조되고, 적색이 흑변되고, 유동성이 상실되며, 과염도 및 이물질 오염 등으로 인하여 많은 양이 비가식화되는 문제가 있어 왔다. 숙성 보관중 표층 고추장의 악변에 의한 손실을 최소화할 수 있는 숙성 조건을 조사하기 위하여 표면을 3가지 방법(무처리, 소금뿌림, PE-film덮기)으로 처리한 후 각각 햇빛을 쪼이면서 숙성한 경우(A, B, C)와 A, B, C와 같이 처리한 후 뚜껑을 덮어 숙성(A', B', C')시키면서 15일 간격으로 수분, 염도, pH, 점도, 퍼짐성(찍음성), 색도, 곱의 발생유무를 조사 비교하였다. 2일에 1회 햇빛을 쪼이면서 120일간 숙성시킨 경우(A, B, C)곱은 발생되지 않았으나 수분함량 감소$(59%{\rightarrow}21-29%)$, 적색도 감소 내지는 흑색화$(21{\rightarrow}0-1)$, 퍼짐성 감소, 굳기 증가$(20{\;}g{\rightarrow}380{\;}g)$ 및 과염도화$(8-18%{\rightarrow}18-30%)$ 등으로 많은 양이 비가식화되는 문제가 발생하였다. 반면 뚜껑을 덮어 숙성시킨 경우 적색도, 염도, 퍼짐성, 굳기는 양호하게 유지되었으나 PE-film을 사용한 경우를 제외하고 곱이 많이 발생되어 PE-film을 덮어 숙성시키는 것이 고추장 표면을 건전하게 관리하는데 효과적인 방법으로 확인되었다.

• 대한화학회지
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• 제25권4호
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• pp.219-227
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• 1981

Sulfamethoxypyridazine, $C_{11}H_{12}N_4O_3S$의 결정 및 분자구조를 X-선 사진 회절법으로 구성하였다. 결정구조는 직접법으로 밝혀 최소자승법으로 정밀화 하였으며 2615개의 회절 반점에 대한 최종 R값은 0.085이었다. 비대칭단위내의 분자 두개 A와 B는 S-N(2) 결합에 대한 형태가 서로 다른 형태 이성질체를 이루며, N(2A)H${\ldots}$N(3B)와 N(2B)H${\ldotst}$O(1A) 수소 결합으로 연결되어 있다. 벤젠과 피리다진 고리의 면들이 이루는 각은 분자 A에서는 $89^{\circ}$, 분자 B에서는 $77^{\circ}$이다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.92-98
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• 2000

A ring comprising a coated conductor was fabricated. A ring was made first using a biaxially textured Ni tape whose two ends were connected by means of the atomic diffusion bonding technique. Then buffer layers and a YBCO film were deposited on it. All the films were well textured as confirmed by XRD pole figures. The B-H loops, where B and H are the magnetic field at the center of the ring and the applied field respectively, were measured as a function of temperature. The persistent current density (J$_c$) flowing circularly was estimated from the remanent field of B. In the range of temperature from 72K to 20K, J$_c$ changed from zero to 2${\times}$1 0$^5$A/cm$^2$.