A Study on the Contaminants Precision Cleaning of Etched Silicon Wafer by Ozone/UV

오존/자외선에 의한 실리콘 웨이퍼의 정밀세정에 관한 연구

  • Published : 2004.07.14

Abstract

In this study, major research fields are classified as ozone generation system for dry cleaning wafer of etched silicon wafer, dry cleaning process of etched silicon wafer which includes SEM analysis and ESCA analysis. The following results are deduced from each experiment and analysis. The magnitudes of carbon and silicon were similar to the survey spectrum of silicon wafer which does not cleaning, but magnitude of oxygen was much bigger Because UV light activates oxygen molecules in the oxide film on the silicon wafer.

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