• Title/Summary/Keyword: a two-layer structure

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A New Modeling Approach to Fuzzy-Neural Networks Architecture (퍼지 뉴럴 네트워크 구조로의 새로운 모델링 연구)

  • Park, Ho-Sung;Oh, Sung-Kwun;Yoon, Yang-Woung
    • Journal of Institute of Control, Robotics and Systems
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    • v.7 no.8
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    • pp.664-674
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    • 2001
  • In this paper, as a new category of fuzzy-neural networks architecture, we propose Fuzzy Polynomial Neural Networks (FPNN) and discuss a comprehensive design methodology related to its architecture. FPNN dwells on the ideas of fuzzy rule-based computing and neural networks. The FPNN architecture consists of layers with activation nodes based on fuzzy inference rules. Here each activation node is presented as Fuzzy Polynomial Neuron(FPN). The conclusion part of the rules, especially the regression polynomial, uses several types of high-order polynomials such as linear, quadratic and modified quadratic. As the premise part of the rules, both triangular and Gaussian-like membership functions are studied. It is worth stressing that the number of the layers and the nods in each layer of the FPNN are not predetermined, unlike in the case of the popular multilayer perceptron structure, but these are generated in a dynamic manner. With the aid of two representative time series process data, a detailed design procedure is discussed, and the stability is introduced as a measure of stability of the model for the comparative analysis of various architectures.

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The Change of I-V Characteristics by Gate Voltage Stress on Few Atomic Layered MoS2 Field Effect Transistors (수 원자층 두께의 MoS2 채널을 가진 전계효과 트랜지스터의 게이트 전압 스트레스에 의한 I-V 특성 변화)

  • Lee, Hyung Gyoo;Lee, Gisung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.3
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    • pp.135-140
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    • 2018
  • Atomically thin $MoS_2$ single crystals have a two-dimensional structure and exhibit semiconductor properties, and have therefore recently been utilized in electronic devices and circuits. In this study, we have fabricated a field effect transistor (FET), using a CVD-grown, 3 nm-thin, $MoS_2$ single-crystal as a transistor channel after transfer onto a $SiO_2/Si$ substrate. The $MoS_2$ FETs displayed n-channel characteristics with an electron mobility of $0.05cm^2/V-sec$, and a current on/off ratio of $I_{ON}/I_{OFF}{\simeq}5{\times}10^4$. Application of bottom-gate voltage stresses, however, increased the interface charges on $MoS_2/SiO_2$, incurred the threshold voltage change, and degraded the device performance in further measurements. Exposure of the channel to UV radiation further degraded the device properties.

Hydrothermal Synthesis of Red-Emitting Y(V0.5,P0.5)O4:Eu Nanophosphors and their Application to Transparent Plasma Display Fabrication (적색발광 Y(V0.5,P0.5)O4:Eu 나노형광체의 수열 합성 및 투명 플라즈마 디스플레이 소자 제작으로의 응용)

  • Song, Woo-Seuk;Yang, Hee-Sun
    • Journal of the Korean Ceramic Society
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    • v.48 no.1
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    • pp.86-93
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    • 2011
  • Transparent plasma display can be realized by developing the synthetic chemistry of appropriate nanophosphors and generating nanophosphor-based transparent luminescent layers. For this goal, red-emitting $Y(V_{0.5},\;P_{0.5})O_4$:Eu nanophosphors were synthesized by a facile hydrothermal route at $200^{\circ}C$ for 48 h and the resulting nanophosphors were subsequently annealed at $800^{\circ}C$ at an ambient atmosphere. The crystallographic structure, morphology, and emission property of the as-synthesized and annealed nanophosphors were compared. Choosing 2-methoxyethanol as a dispersion medium and applying a standard sonication, well-dispersed nanophosphor solutions could be prepared. Using these dispersions, visible transparent nanophosphor layers were spin-deposited on glass substrates. By combining $Y(V_{0.5},\;P_{0.5})O_4$:Eu nanophosphor layer/glass substrate as a rear plate with a front plate used in a conventional plasma display panels (PDPs), mini-sized transparent red-emitting PDPs were constructed. Transmittance and luminance properties of two transparent test panels using as-synthesized versus $800^{\circ}C$-annealed nanophosphors were characterized and compared.

Control of Turbulent Recirculating Flow by Local Forcing (국소교란에 의한 난류 재순환유동의 제어)

  • 전경빈;성형진
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.18 no.2
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    • pp.446-455
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    • 1994
  • An experimental study is conducted for the turbulent recirculating flow behind a backward-facing step when the oscillating jet is issued sinusoidally through a thin slit at the separation edge. Two key parameters are dealt with in the present experiment, i.e., the amplitude of forcing and the forcing frequency. The Reynolds number based on the step height is varied from 25,000 to 35,000. In order to investigate the effect of local forcing, turbulent structures are scrutinized for both the flow of forcing and the flow of no forcing. The growth of shear layer with a local forcing is larger than that of no forcing. The influence of a local forcing brings forth the decrease of reattachment length and the particular frequency gives a minimum reattachment length. The most effective frequency depends on the non-dimensional frequency, St/sub .theta./, based on the momentum thickness at the separation point. A comparative study leads to the conclusion that the large-scale vortical structure is strongly associated with the forcing frequency and the natural flow instability.

Reconstruction of Vacancy Defects in Graphene and Carbon Nanotube

  • Lee, Gun-Do;Yoon, Eui-Joon;Hwang, Nong-Moon;Wang, Cai-Zhuang;Ho, Kai-Ming
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.340-340
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    • 2010
  • Various structures of vacancy defects in graphene layers and carbon nanotubes have been reported by high resolution transmission electron microscope (HR-TEM) and those arouse an interest of reconstruction processes of vacancy defects. In this talk, we present reconstruction processes of vacancy defects in a graphene and a carbon nanotube by tight-binding molecular dynamics (TBMD) simulations and by first principles total energy calculations. We found that a structure of a dislocation defect with two pentagon-heptagon (5-7) pairs in graphene becomes more stable than other structures when the number of vacancy units is ten and over. The simulation study of scanning tunneling microscopy reveals that the pentagon-heptagon pair defects perturb the wavefunction of electrons near Fermi level to produce the $\sqrt{3}\;{\times}\;\sqrt{3}$ superlattice pattern, which is in excellent agreement with experiment. It is also observed in our tight-binding molecular dynamics simulation that 5-7 pair defects play a very important role in vacancy reconstruction in a graphene layer and carbon nanotubes.

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Effect of CORC former and striation on magnetization loss

  • Myeonghee Lee;Byeong-Joo Kim;Miyeon Yoon;Kyeongdal Choi;Ji-Kwang Lee;Woo-Seok Kim
    • Progress in Superconductivity and Cryogenics
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    • v.25 no.4
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    • pp.45-49
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    • 2023
  • CORC, which is being studied as one of the conductors for large currents, is manufactured by symmetrically arranging several strands of high-temperature superconducting wires on a cylindrical former. It allows current to flow evenly between wires and has the advantage of being manufactured in a multi-layer structure to increase current capacity. In order to apply CORC to AC power devices, it is necessary to review the material of the former, which is the frame around which the superconducting wire is wound. In the case of metal formers, they are difficult to apply because eddy currents are generated in the former, and they do not have the flexibility to be manufactured into coils by winding them with CORC. In this paper, we compare and analyze the magnetization loss caused by an external alternating magnetic field of Litz wire, which is being considered as a former material for CORC, with the results from formers made of other materials. In addition, we experimentally examine the effect of reducing magnetization loss due to an external magnetic field in CORC using a split wire made by dividing a high-temperature superconducting wire into two using an etching method, and in CORC made with a non-split wire.

Design and Implementation of Optical Receiving Bipolar ICs for Optical Links

  • Nam Sang Yep;Ohm Woo Young;Lee Won Seok;Yi Sang Yeou1
    • Proceedings of the IEEK Conference
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    • 2004.08c
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    • pp.717-722
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    • 2004
  • A design was done, and all characteristic of photodetectr of the web pattern type which a standard process of the Bipolar which Si PIN structure was used in this paper, and was used for the current amplifier design was used, and high-speed, was used as receiving optcal area of high altitude, and the module which had a low dark current characteristic was implemented with one chip with a base. Important area decreases an area of Ie at the time of this in order to consider an electrical characteristic and economy than the existing receiving IC, and performance of a product and confidence are got done in incense. First of all, the receiving IC which a spec, pattern of a wafer to he satisfied with the following electrical optical characteristic that produced receiving IC of 5V and structure are determined, and did one-chip is made. On the other hand, the time when AR layer of double is $Si_{3}N_{4}/SiO_{2}=1500/1800$ has an optical reflectivity of less than $10{\%}$ on an incidence optical wavelength of 660 ,and, in case of photo detector which reverse voltage made with 1.8V runs in 1.65V, an error about a change of thickness is very the thickness that can be improved surely. And, as for the optical current characteristic, about 5 times increases had the optical current with 274nA in 55nA when Pc was -27dBm. A BJT process is used, and receiving IC running electricity suitable for low voltage and an optical characteristic in minimum 1.8V with a base with two phases is made with one chip. IC of low voltage operates in 1.8V and 3.0V at the same time, and optical link receiving IC is going to be implemented

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Visualization of Unstable Vortical Structure in a Propeller Wake Affected by Simulated Hull Wake (재현된 반류의 영향을 받는 프로펠러 후류 내 불안정한 날개끝 보오텍스 구조에 대한 정량적 가시화)

  • Kim, Kyung-Youl;Paik, Bu-Geun;Ahn, Jong-Woo
    • Journal of the Society of Naval Architects of Korea
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    • v.45 no.6
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    • pp.620-630
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    • 2008
  • The characteristics of complicated propeller wake influenced by hull wake are investigated by using a two-frame PIV (Particle Image Velocimetry) technique. As the propeller is significantly affected by the hull wake in a real marine vessel, the measurements of propeller wake under the hull wake would be certainly necessary for more reliable validation and the prediction of numerical simulation with wake modeling. Velocity field measurements have been conducted in a medium-size cavitation tunnel with a hull wake. Generally, the hull wake generated by the boundary layer of ship's hull produces the different loading distribution on the propeller blade in both upper and lower propeller planes. The difference of the propeller wake behaviors caused by the hull wake is discussed in terms of axial velocity, vorticity and turbulence kinetic energy distribution in the present study.

A Broadband Microstrip Array Antenna for PCS/IMT-2000 Base-Station (PCS/IMT-2000 기지국용 광대역 마이크로스트립 배열 안테나)

  • 김태우;최재훈
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.26 no.11B
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    • pp.1620-1627
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    • 2001
  • In this paper, a broadband microstrip antenna for PCS and IMT-2000 service is designed. To obtain the broadband characteristics of an antenna, we utilized the multi-layered structure composed of two foam material layers, parasitic element and aperture coupled feeding network. The broadband characteristic is obtained by changing the size of parasitic element and the height of foam materials. In addition to that, the usage of metal layer at the distance of λ/4 from feed-line, back radiation is reduced. The bandwidth of a single element for VSWR less than 1.3 is about 550MHz. The bandwidth of a designed 1$\times$4 array antenna for VSWR less than 1.3 is about 460MHz. The gain of a designed array antenna is about 11.15∼12.15dBi and the front-to-back ratio is about 30dB.

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A shorted anode lateral MOS controlled thyristor with improved turn-off characteristics (턴-오프 특성이 향상된 Shorted Anode 수평형 MOS 제어 다이리스터)

  • 김성동;한민구;최연익
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.45 no.4
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    • pp.562-567
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    • 1996
  • A new lateral MOS controlled thyristor, named Shorted Anode LMCT(SA-LMCT), is proposed and analyzed by a two-dimensional device simulation. The device structure employs the implanted n+ layer which shorts the p+ anode together by a common metal electrode and provides a electron conduction path during turn-off period. The turn-off is achieved by not only diverting the hole current through the p+ cathode short but also providing the electron conduction path from the n-base into the n+ anode electrode. In addition, the modified shorted anode LMCT, which has an n+ short junction located inside the p+ anode junction, is also presented. It is shown that the modified SA-LMCT enjoys the advantage of no snap-back behavior in the forward characteristics with little sacrificing of the forward voltage drop. The simulation result shows that the turn-off times of SA-LMCT can be reduced by one-forth and the maximum controllable current density may be increased by 45 times at the expense of 0.34 V forward voltage drop as compared with conventional LMCT. (author). 11 refs., 6 figs., 1 tab.

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