• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.180-180
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• 2010

Thin film transistors (TFTs) based on oxide semiconductors have emerged as a promising technology, particularly for active-matrix TFT-based backplanes. Currently, an amorphous oxide semiconductor, such as InGaZnO, has been adopted as the channel layer due to its higher electron mobility. However, accurate and repeatable control of this complex material in mass production is not easy. Therefore, simpler polycrystalline materials, such as ZnO and $SnO_2$, remain possible candidates as the channel layer. Inparticular, ZnO-based TFTs have attracted considerable attention, because of their superior properties that include wide bandgap (3.37eV), transparency, and high field effect mobility when compared with conventional amorphous silicon and polycrystalline silicon TFTs. There are some technical challenges to overcome to achieve manufacturability of ZnO-based TFTs. One of the problems, the stability of ZnO-based TFTs, is as yet unsolved since ZnO-based TFTs usually contain defects in the ZnO channel layer and deep level defects in the channel/dielectric interface that cause problems in device operation. The quality of the interface between the channel and dielectric plays a crucial role in transistor performance, and several insulators have been reported that reduce the number of defects in the channel and the interfacial charge trap defects. Additionally, ZnO TFTs using a high quality interface fabricated by a two step atomic layer deposition (ALD) process showed improvement in device performance In this study, we report the fabrication of high performance ZnO TFTs with a $Si_3N_4$ gate insulator treated using plasma. The interface treatment using electron cyclotron resonance (ECR) $O_2$ plasma improves the interface quality by lowering the interface trap density. This process can be easily adapted for industrial applications because the device structure and fabrication process in this paper are compatible with those of a-Si TFTs.

• Korean Journal of Remote Sensing
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• v.17 no.1
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• pp.1-14
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• 2001

The enhancement of the refractive index structure parameter $C_n^2$ often occurs where vertical gradients of virtual potential temperature ${\theta}_v$ and mixing ratio q have their maximum values. The $C_n^2$ can be a very useful parameter for estimating the convective boundary layer(CBL) height. The behavior of $C_n^2$ peaks, often used to locate the height of mixed layer, was investigated in the present study. In addition, a new method to determine the CBL height objectively using both $C_n^2$ and vertical air velocity variance ${\sigma}_w$ data of UHF radar was also suggested. The present analysis showed that the $C_n^2$ peaks in the backscatter intensity profiles often occurred not only at the top of the CBL but also at the top of a residual layer or at a cloud layer. The $C_n^2$ peaks corresponding to the CBL heights were slightly lower than the CBL heights derived from rawinsonde sounding data when vertical mixing owing to weak solar heating was not significant and the height of strong vertical ${\theta}_v$ gradients were not consistent with that of strong vertical q gradients. However, the $C_n^2$ peaks corresponding to the CBL heights were in good agreement with the rawinsonde-estimated CBL hegiths when vertical mixing owing to solar heating was significant and the vertical gradient of both ${\theta}_v$ and q in the entrainment zone was very strong. The maximum backscatter intensity method, which determines the height of $C_n^2$ peak as the CBL height, correctly estimated the CBL height when the $C_n^2$ profile had single peak, but this method erroneously estimated the CBL height when there was a residual layer or a cloud layer over the top of the CBL. The new method distinguished when there the CBL height from the peak due a cloud layer or a residual layer using both $C_n^2$ and ${\sigma}_w$ data, and correctly estimated the CBL height. As for estimation of diurnal variation of the CBL height, the new method backscatter intensity method even if the vertical profile of backscatter intensity had two peaks from the CBL height and a residual layer or a cloud layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.525-526
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• 2007

Over-polishing is required to completely remove the material of top surface across whole wafer, in spite of a local dishing problem. This paper introduces the two-step CMP process using protective layer and high selectivity slurry, to reduce dishing amount and variation. The 30nm thick protective oxide layer was deposited on the pattern, and then polished with low selectivity slurry to partially remove the projected area while suppressing the removal rate of the recessed area. After the first step CMP process, high selectivity slurry was used to minimize the dishing amount and variation in pattern structure. Experimental result shows that two-step CMP process can be successfully applicable to reduce the dishing defect generated in over-polishing.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.432.2-432.2
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• 2014

Recently, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED)[1]. In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[2] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QD LED, two kinds of hybrid organic materials, [poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo)(F8BT) + poly(N,N'-bis (4-butylphenyl)-N,N'-bis(phenyl)benzidine (poly-TPD)] and [4,4'-N,N'-dicarbazole-biphenyl (CBP) + poly-TPD], were adopted as hole transport layer having high highest occupied molecular orbital (HOMO) level for improving hole transport ability. At a low-operating voltage of 8 V, the device emits orange and red spectral radiation with high brightness up to 2450 and 1420 cd/m2, and luminance efficacy of 1.4 cd/A and 0.89 cd/A, respectively, at 7 V applied bias. Also, the carrier transport mechanisms for the QD LEDs are described by using several models to fit the experimental I-V data.

• Journal of IKEEE
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• v.26 no.3
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• pp.500-505
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• 2022

In this study, we designed oxide thin-film transistors (TFTs) with dual gate and tri layered split channels, and investigated the structural effect of the TFTs on the electrical characteristics. The dual gates played a key role in increasing the driving current, and the channel structure of tri layers and split form contributed to the increase in the carrier mobility. The tri layered channels consisting of the a-ITGZO and two ITO layers inserted between the gate dielectric and a-ITGZO led to the increase in the on-current by using ITO layers with high conductivity, and the split channels lowered series resistance of the channels. Compared with the mobility (15 cm²/V·s) of the single gate a-ITGZO TFT, the mobility (134 cm²/V·s) of the dual gate tri-layer split channel TFT was remarkably enhanced by the structural effect.

• Journal of Hydrogen and New Energy
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• v.33 no.1
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• pp.38-46
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• 2022

Two different gas diffusion layers having noticeable differences in micro-porous layer's (MPL's) crack were studied as a substrate for the gas diffusion electrode (GDE) with different binder/carbon (B/C) ratios in high-temperature polymer electrolyte fuel cell (Ht-PEMFC). As a result, the performance defined as the voltage at 0.2 A/cm² and maximum power density from the single cells using GDEs from H23 C2 and SGL38 BC with different B/C ratios were compared. GDEs from H23 C2 showed a proportional increase of the voltage with the binder content on the other hand GDEs from SGL38 BC displayed a proportional decline of the voltage to the binder content. It was revealed that MPL crack influences the structure of catalyst layer in GDEs as well as affects the RC_athode which is in close connection with the Ht-PEMFC performance.

• Journal of Korean Society of Rural Planning
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• v.24 no.2
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• pp.69-78
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• 2018

The purpose of this study is on identifying vegetation change through monitoring representative complementary village forests according to different management. For this, two of complementary village forests around Mai mountain which many ones remain were selected. Those are complementary village forests of Seochon and Wonyeonjang. Seochon forest is a representative one which is managed naturally and Wonyeonjang one is a representative one which is managed artificially. The field survey for monitoring was preformed in 2002 and 2007, 2016. D(Dominant degree) and S(Sociability degree) were measured by Brown-Blanquet's method in field survey. Through the analysis and review of survey data, the change of species richness, appearing species characteristics, species composition and layer structure etc. according to different management was monitored. As a result, it can be seen that natural succession has increased species diversity, improved vegetation structure and circulation of complementary village forest. On the other hand, excessive anthropomorphic management was found to be detrimental to the health of the forests and to the vegetation structure and species composition. And it was found that excessive management threaten sustainability and periodical proper management is necessary. Through this review, the useful management direction of complementary village forests was suggested.

• Journal of Information Display
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• v.8 no.2
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• pp.20-24
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• 2007

Efficient white organic light-emitting diodes are fabricated with the blue and red electroluminescent (EL) units electrically connected in a stacked tandem structure by using a transparent doped organic p/n junction. The blue and red EL units consist of the light-emitting layer of 1,4-bis(2,2-diphenyl vinyl)benzene (DPVBi) and 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[i,j] quinolizin-8-yl)vinyl]-4H-pyran) (DCM2) doped tris(8-hydroxyquinoline) aluminum $(Alq_3)$, respectively. The organic p-n junction consists of ${\alpha}-NPD$ doped with $FeCl_3$ (15 % by weight ratio) and $Alq_3$ doped with Li (10 %). The EL spectra exhibit two peaks at 448 and 606 nm, resulting in white light-emission with the Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.36, 0.24). The tandem device shows the quantum efficiency of about 2.2 % at a luminance of 100 $cd/m^2$, higher than individual blue and red EL devices.

• Smart Structures and Systems
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• v.33 no.6
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• pp.385-398
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• 2024

To improve the accuracy of time-frequency analysis (TFA) and instantaneous frequency (IF) extraction of structural dynamic response signals, this paper improves the spline-kernelled chirplet transform, and a new form of modified spline-kernelled chirplet transform (MSCT) based on revised Gaussian window function and energy concentration principle is put forward. The effectiveness of the proposed method is verified by numerical examples of single-component signal, multicomponent signal, single-degree-of-freedom Duffing nonlinear system and two-layer shear frame structure model. Then, a time-varying cable test is designed to collect the acceleration response signals under linear changing tension, and the IF extraction of these signals is performed by using MSCT, which further verifies the effectiveness and accuracy of this method. Through numerical simulation and experimental verification, it is proved that the proposed method can effectively extract the IF of nonlinear structure and time-varying structure.

• Bulletin of the Korean Chemical Society
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• v.32 no.3
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• pp.894-898
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• 2011

The first example of lead compound from $Pb(NO_3)_2$ and $H_3L$ N-heterocyclic ligand $(H_3L\;=\;(HO_2C)_2(C_3N_2)(C_3H_7)CH_2(C_6H_4)(C_6H_3)CO_2H)$, $[Pb_4(L')_4]{\cdot}5H_2O$ 1 (L' = OOC$(C_3H_7)(C_3N_2)CH_2(C_6H_4)(C_6H_3)COO)$, has been obtained under hydrothermal condition by decarboxylation, and characterized by elemental analysis, IR, TGDTA, and single-crystal X-ray diffraction. Compound 1 possesses a rare two-dimensional upper-lower offset terrace-like layer structure. In 1, crystallographic distinct Pb(II) ion adopts five-coordination geometry, and two lattice water molecules occupy the voids between 2-D layers. Results of solid state fluorescence measurement indicate that the emission band 458 nm may be assigned to $\pi^*-n$ and $\pi^*-\pi$ electronic transitions within the aromatic systems of the ligand L', however, the emission bands centred at 555 nm, 600 nm and 719 nm may be derived from phosphorescent emission ($\lambda_{excitation}$ = 390 nm).