• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.134-135
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• 2008

Ultra-thin $SiO_2/ZrO_2$ dielectrics were deposited by atomic layer chemical vapor deposition (ALCVD) method for non-volatile memory application. Metal-oxide-semiconductor (MOS) capacitors were fabricated by stacking ultra-thin $SiO_2$ and $ZrO_2$ dielectrics. It is found that the tunneling current through the stacked dielectric at the high voltage is lager than that through the conventional silicon oxide barrier. On the other hand, the tunneling leakage current at low voltages is suppressed. Therefore, the use of ultra-thin $SiO_2/ZrO_2$ dielectrics as a tunneling barrier is promising for the future high integrated non-volatile memory.

• Bulletin of the Korean Chemical Society
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• v.22 no.12
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• pp.1309-1315
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• 2001

Zirconium sulfate supported on zirconia catalysts were prepared by impregnation of powdered $Zr(OH)_4$ with zirconium sulfate aqueous solution followed by calcining in air at high temperature. The characterization of prepared catalysts was performed using Fourier transform infrared (FTIR), X-ray diffraction (XRD), differential scanning calorimetry (DSC), and by the measurement of surface area. The addition of zirconium sulfate to zirconia increased the phase transition temperature of $ZrO_2$ from amorphous to tetragonal due to the interaction between zirconium sulfate and zirconia, and the specific surface area and acidity of catalysts increased in proportion to the zirconium sulfate content up to 10 wt% of $Zr(SO_4)_2$. Infrared spectra of ammonia adsorbed on $Zr(SO_4)2}ZrO_2$ showed the presence of Bronsted and Lewis acid sites on the surface. $10-Zr(SO_4)_2}ZrO_2$ calcined at $600^{\circ}C$ exhibited maximum catalytic activities for 2-propanol dehydration and cumene dealkylation. The catalytic activities for both reactions were correlated with the acidity of catalysts measured by ammonia chemisorption method.

• Journal of Welding and Joining
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• v.11 no.1
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• pp.62-72
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• 1993

Recently there is an increased interest in joining of ceramics to metals and brazing now an accepted method of joining for a wide variety of ceramic to metal combination. The present research work is aimed at establishing the basis of the metal-ceramic joining of $Al_{2}$O$_{3}$ to STS 304 with using Cu-7.5wt% Zr insert metals. Also the microstructures of the brazed joints were observed by using optical microscope and SEM and the reaction products were analyzed by using EDX, WDX and XRD. As a result, the following findings were obtained. The reaction layers of the brazed joints of $Al_{2}$O$_{3}$ to STS 304 are composed of four layers at the bonded interlayer. Double reaction layers are formed at the interface of $Al_{2}$O$_{3}$ insert metal. Layer I was composed of ZrO$_{2}$ particles, Fe-Cr-Ni compounds in Cu matrix, while layer II ZrO$_{2}$ band phase containing Fe-Cr-Ni compounds.

• Journal of the Korean Ceramic Society
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• v.29 no.2
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• pp.119-126
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• 1992

3 mol% Y2O3-doped ZrO2 powders were prepared by hydrolysis with 0.1, 0.2, 0.3, 0.4, 0.5, 0.6 mol/ιH2O/ethanol into 0.1 mol/ι zirconium and yttrium alkoside/ethanol. Spherical monodispersed yttria-partially stabilized zirconia particles with an average diameter of about 0.5 ${\mu}{\textrm}{m}$ were prepared by hydrolysis with 0.2 mol/ιH2O/ethanol. The as-prepared powder was amorphous and with heating it transformed into cubic up to 80$0^{\circ}C$ and into tetragonal over 100$0^{\circ}C$. 3 mol% Y2O3-doped ZrO2 powders calcined over and up to 80$0^{\circ}C$ were a mixture of tetragonal and monoclinic and only tetragonal as determined by X-ray diffraction, respectively.

• Journal of Powder Materials
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• v.20 no.2
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• pp.100-106
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• 2013

Ultra-fine zirconium carbide (ZrC) powder with nano-sized primary particles was synthesized by the carbothermal reduction method by using nano-sized $ZrO_2$ and nano-sized graphite powders mixture. The synthesized ZrC powder was well dispersed after simple milling process. After heat-treatment at $1500^{\circ}C$ for 2 h under vacuum, ultra-fine ZrC powder agglomerates (average size, $4.2{\mu}m$) were facilely obtained with rounded particle shape and particle size of ~200 nm. Ultra-fine ZrC powder with an average particle size of 316 nm was obtained after ball milling process in a planetary mill for 30 minutes from the agglomerated ZrC powder.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.174-175
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• 2012

음극 아크법으로 증착한 $ZrO_2/Al_2O_3$ 박막의 고온특성을 대기중 $600-900^{\circ}C$에서 50시간동안 노출시킨후 XRD, XPS, AES. SEM, TEM을 이용하여 분석하였다. 증착된 박막은 비정질이었고, 고온에서 가열함에 따라 점차 결정질로 바뀌었다.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.879-885
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• 1994

Coprecipitation technique was used to synthesize ZrO2+12 mol% CeO2 powders with ZrOCl2.8H2O and Ce(NO3)3.6H2O as starting materials. The powders were dried on different conditions such as distilled water, ethanol, and azeotropic distillation. The powders prepared by azeotropic distillation showed weak aggregation of particles and the average particle size of powders calcined at 85$0^{\circ}C$ for 1 hour was 0.19 ${\mu}{\textrm}{m}$. The optimum sintering temperature and holding time are 130$0^{\circ}C$ and 2.5~10 hours, respectively. Beyond the optimum conditions, a phase transition from tetragonal to monoclinic causes to produce cracks in the sintered bodies and to decrease the density.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1334_1335
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• 2009

In this paper we have presented recent studies concerning the high performance oxide thin film transistor (TFT) with a-IGZO channel and $ZrO_2$ gate dielectrics. The a-IGZO TFT is fully fabricated at room-temperature without any thermal treatments. The $ZrO_2$ is one of the most promising high-k materials with high capacitance originated from the high dielectric constant. The a-IGZO TFT with $ZrO_2$ shows high performance exhibiting high field effect mobility of $39.82\;cm^2$/Vs and high on-current of 2.52 mA at 10V.

• Korean Journal of Materials Research
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• v.15 no.2
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• pp.139-142
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• 2005

[ $ZrO_2$ ] gate dielectric thin films were deposited by radio frequency (rf)-magnetron sputtering and its structure, surface morphology and electrical peoperties were studied. As the oxygen flow rate increases, the surface becomes smoother. The experimental results indicate that a high temperature annealing is desirable since it improves the electrical properties of the $ZrO_2$ gate dielectric thin films by decreasing the number of interfacial traps at the $ZrO_2/Si$ interface. The carrier transport mechanism is dominated by the thermionic emission.

• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.297-304
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• 1991

Dielectric hysteresis characteristics of Pb(Zr0.52Ti0.48)O3 ceramics have been investigated as a function of the amount of MnO2 addition ranged from 0.0 wt% in Pb(Zr0.52Ti0.48)O3 ceramics enhanced the dielectric strength, aging effect and remanent polarization, while reduced the coercive field. These results could be explained by the effect of Mn-Vo association due to the substitution of Mn for the (Zr, Ti) site in PZT.