• Journal of Magnetics
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• v.12 no.1
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• pp.45-48
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• 2007

[ $Co_{100-X}Zr_X$ ] (x=10-40) alloys were prepared by using a mechanical alloying technique. Phase constitution of the crystallised material depended on the annealing temperature. The $Co_{82}Zr_{18}$ alloy crystallised at lower temperature around $550^{\circ}C$ consisted of $Co_{23}Zr_6$, $Co_5Zr$ and fcc-Co phases, while the alloy crystallised at higher temperature around $800^{\circ}C$ consisted of $Co_{23}Zr_6$ and fcc-Co phases. Phase constitution of the crystallised material also depended on the chemical composition of the alloy. The material with lower Zr content less than 10 at% Zr consisted of $Co_{23}Zr_6$ and fcc-Co, and the material with higher Zr-content over 30 at% consisted of $Co_2Zr$ phase. The material containing 15-20 at% Zr consisted of $Co_{23}Zr_6$, $Co_5Zr$ and fcc-Co. Only the material containing $Co_5Zr$ phase exhibited substantial coercivity, and it was confirmed that coercivity in the mechanically alloyed Co-Zr alloy was originated from the $Co_5Zr$ phase.

• Journal of the Korean Magnetics Society
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• v.18 no.6
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• pp.227-231
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• 2008

Magnetic and structural properties of CoFeZr alloy films as a function of Zr concentration and magnetoresistive properties of spin valves incorporated with amorphous CoFeZr alloy films have been studied. Magnetization and coercivity of CoFeZr alloy films decreased as the Zr content increased. A single amorphous CoFeZr phase was formed when the Zr content is about above 18 at%. Magnetoresistance ratio and exchange coupling field of spin valves with amorphous CoFeZr were reduced slightly as compared with spin valves with CoFe because the resistance of amophous CoFeZr is higher than that of crystalline CoFe. However, the ${\Delta}{\rho}$ of spin valves with amorphous CoFeZr was improved due to reduction of current shunting.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.645-650
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• 1997

We manufactured CoNbZr/Cu/CoNbZr multi-layer films by rf magnetron sputtering methods and formed the patterns on the deposited multi-layer films. In this study, we fabricated a new etchant for forming the patterns by the wet etching with etchant and we searched for the best etching conditions and the etchant composition. Cu was etched selectively independent on the concentration of iron chloride solution, but amorphous CoNbZr thin film did not. The etchant was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec, which etched CoNbZr/Cu/CoNbZr multi-layer films at the same time. Also, the etchant etched CoNbZr/Cu/CoNbZr multi-layer films by the three-step. It was shown that the cross-section had the isotropic structure and excellent etching characteristics with the above etchant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.141-145
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• 1997

스퍼터링법으로 제조한 CoNbZr/Cu/CoNbZr 다층막에 대해 습식 식각법으로 패턴을 형성하기 위해 새로운 식각 용액을 제조하여 이 용액의 최적의 식각 조건에 대해 연구하였다. 염기성 수용액은 농도에 관계없이 Cu만을 선택적으로 식각하며 CoNbZr 비정질 박막은 식각하지 않았다. 그러나, 본 연구에서 제조 한 17.5 mol%의 염기성 수용액에 HF를 20 mol% 혼합한 식각 용액으로 CoNbZr/Cu/CoNbZr 다층막을 동시에 식각할 수 있었다. 또한 이 식각 용액은 CoNbZr/Cu/CoNbZr 다층막을 3단계로 식각하고 식각된 단면은 이방성 구조를 가지며, 매우 우수한 식각 특성을 나타내었다.

• Applied Chemistry for Engineering
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• v.17 no.3
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• pp.250-254
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• 2006

Reaction of $CO_2$ with $Li_{2}ZrO_{3}$ has been investigated in a TGA and the effects of $H_{2}$ and CO on the removal of $CO_{2}$ using $Li_{2}ZrO_{3}$ were evaluated in a packed bed reactor. The initial rate of $CO_{2}$ removal reaction of $Li_{2}ZrO_{3}$ increased with the increase of gas flow rate up to 100 mL/min and then was maintained, which implied the disappearance of the gas film resistance. The reaction of $CO_{2}$ with $Li_{2}ZrO_{3}$ took place as the first order and the range of optimum temperature was found to be about $500{\sim}600^{\circ}C$. XRD and SEM analysis showed the formation of crystalline $Li_{2}ZrO_{3}$ and porous $Li_{2}ZrO_{3}$/$ZrO_{2}$. The presence of $H_{2}$ did not affect the adsorption of $CO_2$ with $Li_2ZrO_3$. On the other hand, CO inhibited the sorption of $CO_{2}$ into $Li_{2}CO_{3}$(L) on $Li_{2}ZrO_{3}$.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.147-151
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• 2007

We have investigated the half-metallicity and magnetism for the Heusler ferromagnet $Co_2$ZrSi interfaced with semiconductor ZnTe along the (001) plane by using the full-potential linearized augmented plane wave (FLAPW) method. We considered low types of possible interfaces: ZrSi/Zn, ZrSi/Te, Co/Zn, and Co/Te, respectively. From the calculated density of states, it was found that the half-metallicity was lost at all the interfaces, however for the Co/Te system the value of minority spin density of states was close to zero at the Fermi level. These facts are due to the interface states, appeared in the minority spin gap in bulk $Co_2$ZrSi, caused by the changes of the coordination and symmetry and the hybridizations between the interface atoms. At the Co/Te interface, the magnetic moments of Co atoms are 0.68 and $0.78{\mu}_B$ for the "bridge" and "antibridge" sites, respectively, which are much reduced with respect to that ($1.15{\mu}_B$) of the bulk $Co_2$ZrSi. In the case of Co/Zn, Co atoms at the "bridge" and "antibridge" sites have magnetic moments of 1.16 and $0.93{\mu}_B$, respectively, which are almost same or slightly decreased compared to that of the bulk $Co_2$ZrSi. On the other hand, for the ZrSi/Zn and ZrSi/Te systems, the magnetic moments of Co atoms at the sub-interface layers are in the range of $1.13{\sim}1.30\;{\mu}_B$, which are almost same or slightly increased than that of the bulk $Co_2$ZrSi.

• Korean Journal of Materials Research
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• v.13 no.9
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• pp.572-580
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• 2003

Synthesizing behavior and microstructural evolution of $CaZrO_3$and $m-ZrO_2$in a thermal reaction process of $ZrSiO_4$-$xCaCO_3$mixtures, where x is 7 and 19, were investigated to determine the addition amount of CaO in CaO:$ZrO_2$:$SiO_2$ternary composition. CaZrO$_3$-Ca$_2$SiO$_4$precursor prepared by the mixture of $ZrSiO_4$and CaCO$_3$in aqueous suspending media was controlled to the acidic (pH=4.0) condition with HCI solution to enhance the thermal reaction. The addition amount of dispersant into the $ZrSiO_4$-$xCaCO_3$slip increased with increasing mole ratio of $CaCO_3$, which was associated with the viscosity of slip. Decarbonation reaction was activated with an increase of the addition amount of $CaCO_3$, showing different final temperatures in $ZrSiO_4$-$7CaCO_3$and $ZrSiO_4$-$19CaCO_3$mixtures as about 980 and 116$0^{\circ}C$, respectively, for finishing decarbonation reaction. The grain morphology was changed to spherical shape for all samples with an increase of sintering temperature. The grain size and phase composition of the synthesized composites depended on the mixture ratio of Zrsi04 and CacO3 powders, indicating that the main crystals were m-ZrO2 ($\leq$3 $\mu\textrm{m}$) and $CaZrO_3$ ($\leq$ 7 $\mu\textrm{m}$) in $ZrSiO_4$$>-7CaCO_3$and $ZrSiO_4$-$19CaCO_3$mixtures, respectively.

• Journal of Magnetics
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• v.9 no.1
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• pp.13-16
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• 2004

Magnetic tunnel junctions (MTJs) comprising amorphous CoNbZr layers have been investigated. $Co_{85.5}Nb_8Zr_{6.5}$(in at. %) layers were employed to substitute the traditionally used Ta layers with an emphasis given on under-standing underlayer effect. The typical junction structure was $SiO_2/CoNbZr$ or Ta 2/CoFe 8/IrMn 7.5/CoFe 3/Al 1.6 + oxidation/CoFe 3/CoNbZr or Ta 2 (nm). For both as-deposited state and after annealing, the CoNbZr-underlayered structure showed superior surface smoothness up to the tunnel barrier than Ta-underlayerd one (rms roughness of 0.16 vs. 0.34 nm). CoNbZr-based MTJs was proven beneficial for increasing thermal stability and increasing $V_h$ (the bias voltage where MR ratio becomes half) characteristics than Ta-based MTJs. This is because the CoNbZr-based junctions offer smoother interface structure than the Ta-based one.

• Journal of the Korean Magnetics Society
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• v.8 no.6
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• pp.357-361
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• 1998

For CoZr/Ag/CoCr trilayered films deposited by DC and FR magnetron sputtering method, ferromagentic resonance experiments have been used to investigate the dependence of the exchange coupling between CoZr and CoCr layers separated by Ag layer on the thickness of the Ag layer. The coupling strength K increases with increasing Ag thickness up to 10 $\AA$ with a maximum value of 748 Oe, but oscillates with increasing Ag thickness in the range from 20 to 100 $\AA$. The coupling strength is positive for all samples. Hence, it seems that the exchange coupling between CoZr and CoCr layers separated by Ag layer is ferromagnetic.

• Korean Chemical Engineering Research
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• v.44 no.4
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• pp.356-362
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• 2006

The $SO_2$ reduction using CO and $H_2$ over Sn-Zr based catalysts was performed in this study. Sn-Zr based catalysts with Sn/Zr molar ratio (0/1, 1/4, 1/1, 2/1, 3/1, 1/0) were prepared by the precipitation and co-precipitation method. The effect of the temperature on the reaction characteristics of the $SO_2$ reduction with a reducing agent such as $H_2$ and CO was investigated under the conditions of space velocity of $10,000ml/g_{-cat.}h$, $([CO(or\;H_2)]/[SO_2])$ of 2.0. As a result, the activity of Sn-Zr based catalysts were higher than $SnO_2$ and $ZrO_2$. The reactivity for the $SO_2$ reduction with CO was higher than that with $H_2$, and sulfur yield in the $SO_2$ reduction by $H_2$ was higher than that by CO. The reactivity for the $SO_2$ reduction with $H_2$ was increased with the reaction temperature regardless of Sn-Zr based catalyst with a Sn/Zr molar ratio. $SnO_2-ZrO_2$ (Sn/Zr=1/4) had highest activity at $550^{\circ}C$, in the $SO_2$ reduction with $H_2$ and $SO_2$ conversion of 94.4％ and sulfur yield of 66.4％ were obtained at $550^{\circ}C$. On the other hand, in the $SO_2$ reduction by CO, the reactivity was decreased with the increase over $325^{\circ}C$. At the optimal temperature of $325^{\circ}C$, $SO_2$ conversion and sulfur yield were about 100％ and 99.5％, respectively, in the $SO_2$ reduction over $SnO_2-ZrO_2$ (Sn/Zr=3/1). Also, the $SO_2$ reduction using syngas with $CO/H_2$ ratio over $SnO_2-ZrO_2$ (Sn/Zr=2/1) was performed in order to investigate the application possibility of the simulated coal gas as the reductant in DSRP. As a result, the reactivity of the $SO_2$ reduction using syngas with $CO/H_2$ ratio was increased with increasing the CO content of syngas. Therefore, it could be known that DSRP using the simulated coal gas over Sn-Zr based catalyst is possible to be realized in IGCC system