A Behavior of the Wet Etching of CoNbZr/Cu/CoNbZr Multi-Layer Films

CoNbZr/Cu/CoNbZr 다층막의 습식 식각 거동

  • 김현식 (경남대학교 공대 무기재료공학과) ;
  • 이영생 (창원대학교 공대 재료공학과) ;
  • 송재성 (한국전기연구소 비정질재료연구팀) ;
  • 오영두 (경남대학교 공대 무기재료공학과) ;
  • 윤재홍 (창원대학교 공대 재료공학과)
  • Published : 1997.08.01

Abstract

We manufactured CoNbZr/Cu/CoNbZr multi-layer films by rf magnetron sputtering methods and formed the patterns on the deposited multi-layer films. In this study, we fabricated a new etchant for forming the patterns by the wet etching with etchant and we searched for the best etching conditions and the etchant composition. Cu was etched selectively independent on the concentration of iron chloride solution, but amorphous CoNbZr thin film did not. The etchant was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec, which etched CoNbZr/Cu/CoNbZr multi-layer films at the same time. Also, the etchant etched CoNbZr/Cu/CoNbZr multi-layer films by the three-step. It was shown that the cross-section had the isotropic structure and excellent etching characteristics with the above etchant.

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