• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.26-29
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• 2001

ZnO thin film had been deposited on the glass by Evaporation Ramped method. and electrical and resistivity were investigated. Evaporation gas($O_{2}$,) pressure was 10mTorr~100mTorr, chamber pressure was $2{\times}10^{-5}$, and then ZnO film were deposited. AI-doped ZnO thin film had the lowest resistivity ($1{\times}10^{4}\;{\Omega}{\cdot}cm$), and then carrier concentration and Hall mobility were$6.27{\times}10^{20}\;cm^{3}$ and $22.04 cm^{2}/V{\cdot}s$, respectively. When ZnO film had been deposited by Ramp6ed method compared with normal method and investigated resistivity.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.232-235
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• 2011

ZnO nanorods for gas sensors were prepared by a hydrothermal method. The ZnO gas sensors were fabricated on alumina substrates by a screen printing method. The gas-sensing properties of the ZnO nanorods were investigated for $CH_4$ gas. The effects of growth time on the structural and morphological properties of the ZnO nanorods were investigated by X-ray diffraction and scanning electron microscope. The XRD patterns of the nanocrystallized ZnO nanorods showed a wurtzite structure with the (002) predominant orientation. The diameter and length of the ZnO nanorods increased in proportion to the growth time. The sensitivity of the ZnO sensors to 5 ppm $CH_4$ gas was investigated for various growth times. The ZnO sensors exhibited good sensitivity and rapid response-recovery characteristics to $CH_4$ gas, and both traits were dependent on the growth time. The highest sensitivity of the ZnO sensors to $CH_4$ gas was observed with the growth time of 7 h. The response and recovery times were 13 s and 6 s, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.22-22
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• 2010

0.1~5.0 at% CuO doped ZnO specimens were fabricated by a commercial ceramic process and sintered at 900~$1200^{\circ}C$ for 3h in air. The relative densities were over 97% for all samples and average grain size increased with CuO doping. The defect trap levels i.e. ionization energies of defects were increased linearly with CuO contents as 0.2 eV to 0.7 eV by using admittance spectroscopy and dielectric functions. The apparent activation energies of grain boundaries were varied but in the range of 0.96~1.1 eV. Dielectric constant were increased with CuO contents and sintering temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.145-145
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• 2010

It is observed from SEM images that many voids were created after annealed by helium gas. The PL spectra of the ZnO samples revealed the strong violet emission peaks at 3.05 eV with the relative weak near band edge UV emissions. It was concluded from experiment results that native $Zn_i$ and $V_o$ donor defect levels can be generated below the conduction band edge due to the incorporation of helium atoms decomposed from helium gas into the ZnO matrix. He atoms in ZnO matrix will affect the interface trap existing in depletion regions located at the grain boundaries, which leads to the creation of $Zn_i$ and $V_o$ donor defect levels.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.101-102
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• 2009

We described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The un doped ZnO thin films were grown on c-$Al_2O_3$ substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and $600^{\circ}C$, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.4
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• pp.140-145
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• 2003

The influence of microstructure nonuniformity on the electrical characteristics of ZnO varistors was analyzed with the added amount of $Al_2$O$_3$ dopants. $Al_2$O$_3$ doping can effectively inhibit grain growth. When $Al_2$O$_3$ content is in the range between 0-0.1 %, the average grain size and the standard deviation decrease quickly and the grain growth is strongly inhibited. Therefore, it is possible to increase the microstructure uniformity by accurate addition of $Al_2$O$_3$ to the ZnO varistor. The breakdown voltage increases with the decrease of standard deviation. The greater the uniformity of the Zno varistor means the higher the global breakdown voltage. The $Al_2$O$_3$ dopants having about 0-0.023 wt% content can effectively improve the voltage ratio, and the voltage ratio reaches a minimum value of 2.32 at an $Al_2$O$_3$ content of 0.005 wt%.

• Korean Journal of Materials Research
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• v.15 no.8
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• pp.514-517
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• 2005

Effects of nitrogen and oxygen annealing on the carrier concentration, carrier mobility, electrical resistivity and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD), Scanning electron microscope (SEM), photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. Annealing undoped ZnO films grown by ALD at a high temperature above $600^{\circ}C$ improves the crystallinity and enhances W emission but deteriorates the electrical conductivity of the flms. The resistivity of the ZnO film annealed particularly at $800^[\circ}C$ in a nitrogen atmosphere is much higher than that annealed at the same temperature in an oxygen atmosphere.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.718-726
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• 1998

J-E 특성 AC 임피더스 분석 그리고 주파수- 전도 특성들을 실험하여 임펄스 전류 서지가 ZnO 바리스터의 열화(degradation)에 미치는 영향을 고찰하였다. ZnO 바리스터 시편에 임펄스 전류(300A/$cm^24, 8/50$\mu s$)를 인가시킨 결과, 입계(grain boundary) 특성을 나타내는 비선형계수 $\alpha$와 E\ulcorner\ulcorner의 값은 크게 감소하였으나, 입자 특성을 나타내는 E_{100A}, E_{300A}$ 값에서는 큰 변화가 없었다. 이러한 열화 현상은 입계의 위치한 부성 전하 밀도, $N_s$의 감소에 한 쇼트키 장벽의 변화에 기인한 것으로 나타났다. 임펄스 서지에 의해 열화된 ZnO 바리스터는 AC 임피더스 분석에서 현저한 non-Debye 특성을 보이며, 이는 병렬 RC 네트워크로 모델링한 Cole-Cole 완화 관계식으로 입계의 열화 특성을 잘 설명할 수 있었다. 주파수-전도도 관계를 검토한 결과 Zno 바리스터는 호핑 전도(hopping conduction),\$sigma(\omega)\varpropto\omega^{\eta}$ 특성을 나타내면, 임펄스 서지가 인가된 이후 n 값이 감소하였다. 이는 임펄스 서지에 의해 입RP 결합 상태(defect states)가 호핑 전도가 발생하기 쉽고 다중(multiple)호핑에 의한 전도 메커니즘을 갖는 것으로 고찰되었다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.2
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• pp.69-76
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• 2010

Recently, the natural environment changes drastically and the frequency of occurrence for lightning has gradually been increased. Such lightning delivers high volume of energy along the power line and communication line to the equipment in use. The high volume of energy arising from the lightning surge develops in fast velocity to destroy the facilities in power source and many other facilities in operation in sequential destruction with vast energy. This paper examines the characteristics of ZnO varistor to prevent from thermal runaway. We carry out performance evaluation of electrical characteristics on ZnO varistor. we will develop ZnO varistor Prevented from thermal explosion using test result of this paper.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.1
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• pp.115-120
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• 2009

The 3wt.% Al-doped zinc oxide (AZO) thin films were fabricated on Coming 1737 substrates at a fixed oxygen pressure of 200 mTorr with various substrate temperatures ($100\;{\sim}\;250^{\circ}C$) by using pulsed laser deposition in order to investigate the microstructure, optical, and electrical properties of AZO thin films. All thin films were shown to be c-axis oriented, exhibiting only a (002) diffraction peak. The AZO thin film, fabricated at 200 mTorr and $250^{\circ}C$, showed the highest (002) orientation and the full width at half maximum (FWHM) of the (002) diffraction peak was $0.44^{\circ}$. The optical transmittance in the visible region was higher than 85 %. The Burstein-Moss effect, which shifts to a high photon energy, was observed. The electrical property indicated that the highest carrier concentration ($3.48{\times}10^{20}cm^{-3}$) and the lowest resistivity ($1.65{\times}10^{-2}{\Omega}cm$) were obtained in the AZO thin film fabricated at 200 mTorr and $250^{\circ}C$.